DPG10I200PA HiPerFRED VRRM = 200 V I FAV = 10 A t rr = 35 ns High Performance Fast Recovery Diode Low Loss and Soft Recovery Single Diode Part number DPG10I200PA Backside: cathode 3 1 Features / Advantages: Applications: Package: TO-220 Planar passivated chips Very low leakage current Very short recovery time Improved thermal behaviour Very low Irm-values Very soft recovery behaviour Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low Irm reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode Rectifiers in switch mode power supplies (SMPS) Uninterruptible power supplies (UPS) Industry standard outline RoHS compliant Epoxy meets UL 94V-0 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG10I200PA Ratings Fast Diode Conditions Symbol VRSM Definition max. non-repetitive reverse blocking voltage TVJ = 25C max. 200 Unit V VRRM max. repetitive reverse blocking voltage TVJ = 25C 200 V IR reverse current, drain current VF I FAV average forward current VF0 threshold voltage rF slope resistance R thJC thermal resistance junction to case typ. VR = 200 V TVJ = 25C 1 A VR = 200 V TVJ = 150C 0.06 mA TVJ = 25C 1.27 V 1.45 V 0.98 V IF = forward voltage drop min. 10 A IF = 20 A IF = 10 A IF = 20 A TVJ = 150 C TC = 150C rectangular 1.17 V T VJ = 175 C 10 A TVJ = 175 C 0.74 V d = 0.5 for power loss calculation only 17.7 m 2.3 K/W R thCH thermal resistance case to heatsink Ptot total power dissipation I FSM max. forward surge current t = 10 ms; (50 Hz), sine; VR = 0 V TVJ = 45C CJ junction capacitance VR = 150 V f = 1 MHz TVJ = 25C 15 pF I RM max. reverse recovery current TVJ = 25 C 3 A t rr reverse recovery time IF = IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved K/W 0.50 TC = 25C 10 A; VR = 130 V -di F /dt = 200 A/s 65 140 W A TVJ = 125C 5.5 A TVJ = 25 C 35 ns TVJ = 125C 45 ns Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG10I200PA Package Ratings TO-220 Symbol I RMS Definition Conditions RMS current per terminal min. TVJ virtual junction temperature T op operation temperature Tstg storage temperature -55 typ. max. 35 Unit A -55 175 C -55 150 C 150 C Weight 2 MD mounting torque FC mounting force with clip Product Marking Part Number 0.4 0.6 Nm 20 60 N Part number D P G 10 I 200 PA XXXXXX Logo Assembly Line Lot # g = = = = = = = Diode HiPerFRED extreme fast Current Rating [A] Single Diode Reverse Voltage [V] TO-220AC (2) Zyyww abcdef Date Code Ordering Standard Part Number DPG10I200PA Similar Part DPG10I200PM Equivalent Circuits for Simulation I V0 R0 Marking on Product DPG10I200PA Package TO-220ACFP (2) * on die level Delivery Mode Tube Code No. 506301 Voltage class 200 T VJ = 175 C Fast Diode V 0 max threshold voltage 0.74 V R 0 max slope resistance * 14.5 m IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Quantity 50 Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG10I200PA Outlines TO-220 A A1 OP H1 Q E D 4 3 L1 1 L 2x b2 2x b C e Millimeter Min. Max. Inches Min. Max. A A1 A2 4.32 1.14 2.29 4.82 1.39 2.79 0.170 0.045 0.090 0.190 0.055 0.110 b b2 0.64 1.15 1.01 1.65 0.025 0.045 0.040 0.065 C D 0.35 14.73 0.56 16.00 0.014 0.580 0.022 0.630 E e H1 9.91 5.08 5.85 10.66 BSC 6.85 0.390 0.200 0.230 0.420 BSC 0.270 L L1 12.70 2.79 13.97 5.84 0.500 0.110 0.550 0.230 OP Q 3.54 2.54 4.08 3.18 0.139 0.100 0.161 0.125 A2 3 IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved Dim. 1 Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a DPG10I200PA Fast Diode 30 0.4 12 TVJ = 125C VR = 130 V 25 20 IF 0.3 TVJ = 25C 125C 150C 20 A Qr 15 10 A 20 A VR = 130 V 10 A 8 5A IRR 0.2 [A] TVJ = 125C 10 6 5A [C] [A] 10 4 0.1 5 2 0 0.0 0.0 0.4 0.8 1.2 1.6 2.0 0 0 100 200 300 400 500 0 -diF /dt [A/s] VF [V] Fig. 1 Forward current IF versus VF 200 300 400 500 -diF /dt [A/s] Fig. 3 Typ. reverse recovery current IRR versus -diF /dt Fig. 2 Typ. reverse recov. charge Qr versus -diF /dt 80 1.4 100 12 600 10 500 TVJ = 125C 1.2 VR = 130 V 60 1.0 8 trr 0.8 Kf IF = 20 A 40 0.6 6 [ns] IRR 10 A [V] 20 Qrr 0.2 2 0.0 0 0 40 80 120 160 TVJ [C] 100 200 300 400 500 300 [ns] 200 VFR tfr 0 100 200 300 400 100 0 500 -diF /dt [A/s] -diF /dt [A/s] Fig. 5 Typ. reverse recov. time trr versus -diF /dt 10 tfr IF = 10 A VR = 130 V 0 0 Fig. 4 Typ. dynamic parameters Qrr, IRR versus TVJ TVJ = 125C 4 5A 0.4 400 VFR Fig. 6 Typ. forward recovery voltage VFR and tfr versus diF /dt 3 TVJ = 125C VR = 130 V 8 2 IF = 5 A Erec 6 ZthJH 10 A 20 A [K/W] [J] 4 1 2 0 0 100 200 300 400 500 -diF /dt [A/s] Fig. 7 Typ. recovery energy Erec versus -diF /dt IXYS reserves the right to change limits, conditions and dimensions. (c) 2013 IXYS all rights reserved 0 0.001 0.01 0.1 Rthi [K/W] ti [s] 0.3866 0.7062 0.8127 0.3945 0.0004 0.0025 0.022 0.13 1 10 t [s] Fig. 8 Transient thermal resistance junction to case Data according to IEC 60747and per semiconductor unless otherwise specified 20131125a