DPG10I200PA
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Single Diode
HiPerFRED²
13
Part number
DPG10I200PA
Backside: cathode
FAV
rr
tns35
RRM
10
200
=
V= V
I= A
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-220
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG10I200PA
n
s
3
A
T
VJ
=°C
reverse recovery time
A
5.5
35
45
n
s
I
RM
max. reverse recovery current
I
F
=A;10
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V130
T
VJ
=°C25
T=125°C
VJ
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.27
R2.3 K/
W
R
min.
10
V
RSM
V
1T = 25°C
VJ
T = °C
VJ
m
A
0.06V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
150
P
tot
65
W
T = 25°C
C
RK/
W
10
200
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.45
T = 25°C
VJ
150
V
F0
V
0.74T = °C
VJ
175
r
F
17.7 m
Ω
V
0.98T = °C
VJ
I = A
F
V
10
1.17
I = A
F
20
I = A
F
20
threshold voltage
slope resistance for power loss calculation only
µ
150
V
RRM
V
200
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
15
j
unction capacitance V = V150 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
140
A
200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
200
0.50
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG10I200PA
Ratings
XXXXXX
Zyyww
Logo
Part Number
Date Code
Lot #
abcdef
Product Markin
g
A
ssembly Line
D
P
G
10
I
200
PA
Part number
Diode
HiPerFRED
extreme fast
Single Diode
TO-220AC (2)
=
=
=
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
M
D
Nm0.6
mounting torque 0.4
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g2
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N60
mount ing for ce w i th cli p 20
I
RMS
RMS current 35 A
per terminal
150-55
TO-220
Similar Part Package Voltage class
DPG10I200PM TO-220ACFP (2) 200
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
DPG10I200PA 506301Tube 50DPG10I200PAStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.74
mΩ
V
0 max
R
0 max
slope resistance * 14.5
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Fast
Diode
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG10I200PA
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.32 4.82 0.170 0.190
A1 1.14 1.39 0.045 0.055
A2 2.29 2.79 0.090 0.110
b 0.64 1.01 0.025 0.040
b2 1.15 1.65 0.045 0.065
C 0.35 0.56 0.014 0.022
D 14.73 16.00 0.580 0.630
E 9.91 10.66 0.390 0.420
e 5.08 BSC 0.200 BSC
H1 5.85 6.85 0.230 0.270
L 12.70 13.97 0.500 0.550
L1 2.79 5.84 0.110 0.230
ØP 3.54 4.08 0.139 0.161
Q 2.54 3.18 0.100 0.125
2x b2
E
ØP
Q
D
L1
L
2x b
e
C
A2
H1
A1
A
13
4
13
Outlines TO-220
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG10I200PA
0 100 200 300 400 500
0
20
40
60
80
0 40 80 120 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
K
f
T
VJ
[°C]
0 100 200 300 400 500
0
2
4
6
8
10
12
0
100
200
300
400
500
600
V
FR
[V]
0 100 200 300 400 500
0
2
4
6
8
10
12
0 100 200 300 400 500
0.0
0.1
0.2
0.3
0.4
0.0 0.4 0.8 1.2 1.6 2.0
0
5
10
15
20
25
30
I
RR
[A]
Q
r
[μC]
I
F
[A]
V
F
[V] -di
F
/dt [A/μs]
t
rr
[ns]
V
FR
t
fr
I
RR
Q
rr
-di
F
/dt [A/μs]
-diF/dt [A/μs]
5 A
10 A
-di
F
/dt [A/μs]
t
fr
[ns]
0.001 0.01 0.1 1 10
0
1
2
3
t[s]
Z
thJH
[K/W]
0 100 200 300 400 500
0
2
4
6
8
10
E
rec
[μJ]
-di
F
/dt [A/μs]
T
VJ
= 25°C
125°C
150°C
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recov. charge
Qrversus -di
F
/dt
Fig. 3 Typ. reverse recovery current
I
RR
versus -di
F
/dt
Fig. 4 Typ. dynamic parameters
Q
rr
,I
RR
versus T
VJ
Fig. 5 Typ. reverse recov. time
trr versus -di
F
/dt
Fig. 6 Typ. forward recovery voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Typ. recovery energy
E
rec
versus -di
F
/dt
Fig. 8 Transient thermal resistance junction to case
20 A
10 A
5 A
20 A
10 A
5A
T
VJ
=125°C
V
R
=130V
T
VJ
=125°C
V
R
=130 V
T
VJ
= 125°C
V
R
= 130 V
T
VJ
= 125°C
V
R
=130 V
T
VJ
= 125°C
I
F
= 10 A
V
R
= 130 V
I
F
=5 A
10 A
20 A
I
F
= 20 A
R
thi
[K/W]
0.3866
0.7062
0.8127
0.3945
t
i
[s]
0.0004
0.0025
0.022
0.13
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20131125aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved