BFR90A Vishay Semiconductors Silicon NPN Planar RF Transistor Features * * * * * High power gain Low noise figure e3 High transition frequency Lead (Pb)-free component Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC 3 B 1 C 3 2 E 2 1 19039 Applications Electrostatic sensitive device. Observe precautions for handling. RF amplifier up to GHz range specially for wide band antenna amplifier. Mechanical Data Case: TO-50 Plastic case Weight: approx. 111 mg Pinning: 1 = Collector, 2 = Emitter, 3 = Base Parts Table Part BFR90A Ordering code BFR90AGELB-GS08 Marking Remarks BFR90A Package Packed in Bulk TO-50(3) Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Symbol Value Unit Collector-base voltage Parameter Test condition VCBO 20 V Collector-emitter voltage VCEO 15 V Emitter-base voltage VEBO 2 V IC 30 mA Ptot 300 mW Collector current Total power dissipation Tamb 60 C Junction temperature Storage temperature range Tj 150 C Tstg - 65 to + 150 C Symbol Value Unit RthJA 300 K/W Maximum Thermal Resistance Parameter Junction ambient 1) Test condition 1) on glass fibre printed board (40 x 25 x 1.5) mm3 plated with 35 m Cu Document Number 85029 Rev. 1.4, 29-Apr-05 www.vishay.com 1 BFR90A Vishay Semiconductors Electrical DC Characteristics Tamb = 25 C, unless otherwise specified Max Unit Collector-emitter cut-off current Parameter VCE = 20 V, VBE = 0 Test condition Symbol ICES 100 A Collector-base cut-off current VCB = 15 V, IE = 0 ICBO 100 nA Emitter-base cut-off current VEB = 2 V, IC = 0 IEBO 10 A Collector-emitter breakdown voltage IC = 1 mA, IB = 0 V(BR)CEO 15 hFE 50 100 150 Symbol Min Typ. Max DC forward current transfer ratio VCE = 10 V, IC = 14 mA Min Typ. V Electrical AC Characteristics Tamb = 25 C, unless otherwise specified Parameter Test condition Transition frequency VCE = 10 V, IC = 14 mA, f = 500 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz fT Unit 6 GHz Ccb 0.3 pF Cce 0.25 pF Emitter-base capacitance VEB = 0.5 V, f = 1 MHz Ceb 0.9 pF Noise figure VCE = 10 V, IC = 2 mA, f = 800 MHz, ZS = 50 F 1.8 dB Power gain VCE = 10 V, IC = 14 mA, ZL = ZLopt, f = 800 MHz Gpe 16 dB Linear output voltage - two tone intermodulation test VCE = 10 V, IC = 14 mA, dIM = 60 dB, f1 = 806 MHz, f2 = 810 MHz, ZS = ZL = 50 V1 = V2 120 mV Third order intercept point VCE = 10 V, IC = 14 mA, f = 800 MHz IP3 24 dBm Common Emitter S-Parameters VCE/V IC/mA f/MHz S11 S21 LIN MAG ANG ANG 5 www.vishay.com 2 2 100 0.90 -17.7 6.25 300 500 0.80 -50.4 0.67 -78.1 800 0.52 1000 5 S22 LIN MAG ANG LIN MAG ANG 165.4 0.02 81.1 0.98 -6.8 5.51 140.9 4.66 121.6 0.05 65.5 0.91 -18.2 0.07 56.7 0.84 -111.2 3.56 -25.8 99.9 0.08 51.2 0.77 0.45 -128.8 -33.8 2.99 89.0 0.09 51.0 0.75 -38.4 1200 0.40 1500 0.34 -144.1 2.58 80.3 0.10 52.1 0.74 -42.7 -164.2 2.11 69.3 0.11 54.6 0.74 1800 49.4 0.30 176.6 1.80 59.3 0.12 57.8 0.75 -56.3 2000 0.28 165.9 1.64 54.2 0.13 59.4 0.76 -61.0 100 0.77 -27.0 13.24 156.9 0.02 76.2 0.95 -10.9 deg 5 S12 LIN MAG deg deg deg Document Number 85029 Rev. 1.4, 29-Apr-05 BFR90A Vishay Semiconductors VCE/V IC/mA f/MHz S11 S21 LIN MAG ANG 300 0.56 500 800 ANG -69.4 9.72 0.41 -97.4 0.30 -126.9 1000 0.26 1200 1500 5 5 5 10 10 14 20 30 2 Document Number 85029 Rev. 1.4, 29-Apr-05 S22 LIN MAG ANG LIN MAG ANG 125.0 0.04 63.9 0.79 -23.5 7.01 106.7 0.05 4.76 89.9 0.07 61.8 0.70 -28.5 63.5 0.65 -142.7 3.89 81.8 0.08 34.1 64.6 0.64 -38.3 0.24 -155.8 3.29 75.1 0.21 -174.3 2.67 66.5 0.10 65.7 0.63 -42.5 0.12 66.2 0.64 1800 0.19 167.7 2.27 -49.3 58.1 0.14 66.0 0.66 2000 0.18 158.7 -56.2 2.06 53.8 0.16 65.5 0.67 100 0.61 -60.6 -33.8 20.89 147.5 0.02 74.8 0.89 -15.0 300 500 0.36 -85.3 12.25 113.4 0.03 67.7 0.68 -24.6 0.26 -111.7 8.10 98.2 0.05 69.4 0.61 -27.5 deg 5 S12 LIN MAG deg deg deg 800 0.20 -139.9 5.28 84.9 0.07 71.4 0.58 -32.8 1000 0.18 -154.3 4.28 78.0 0.08 71.8 0.58 -37.0 1200 0.17 -166.5 3.61 72.3 0.10 71.6 0.58 -41.5 1500 0.16 177.7 2.91 64.7 0.12 70.3 0.59 -48.7 1800 0.14 160.4 2.48 57.1 0.15 68.7 0.61 -55.7 2000 0.14 153.6 2.26 53.1 0.17 67.5 0.62 -60.4 100 0.51 -44.8 24.51 142.5 0.01 74.5 0.86 -16.7 300 0.28 -93.9 13.01 108.9 0.03 71.0 0.65 -24.1 500 0.20 -120.2 8.36 95.3 0.05 72.9 0.59 -26.2 800 0.17 -147.3 5.40 83.0 0.07 74.0 0.57 -31.8 1000 0.15 -160.1 4.36 76.6 0.08 74.0 0.57 -36.2 1200 0.15 -172.1 3.69 71.3 0.10 73.4 0.57 -40.7 1500 0.14 172.8 2.98 63.9 0.13 71.7 0.58 -48.0 1800 0.13 155.7 2.52 56.5 0.15 69.8 0.60 -55.1 2000 0.13 147.1 2.29 52.8 0.17 68.3 0.61 -59.8 100 0.41 -53.2 27.71 137.2 0.01 74.0 0.82 -18.0 300 0.22 -105.4 13.38 104.9 0.03 74.1 0.62 -22.9 500 0.17 -131.2 8.45 92.6 0.04 75.6 0.58 -24.8 800 0.15 -156.4 5.41 81.3 0.07 76.1 0.56 -30.7 1000 0.14 170.4 4.36 75.2 0.09 75.4 0.56 -35.3 1200 0.14 177.4 3.68 69.8 0.10 74.5 0.57 -40.0 1500 0.14 164.4 2.96 62.5 0.13 72.5 0.58 -47.3 1800 0.14 147.5 2.51 55.4 0.15 70.4 0.59 -54.5 2000 0.13 141.0 2.28 51.5 0.17 68.8 0.60 -59.3 100 0.30 -67.7 29.72 131.4 0.01 74.3 0.78 -18.4 300 0.19 -125.3 13.17 101.2 0.03 76.3 0.61 -20.7 500 0.16 -149.8 8.19 90.0 0.04 78.0 0.58 -22.8 800 0.16 -171.3 5.23 79.2 0.07 77.8 0.57 -29.0 1000 0.16 177.6 4.21 73.3 0.08 77.1 0.57 -33.9 1200 0.16 167.5 3.54 68.2 0.10 76.0 0.58 -38.6 1500 0.16 156.2 2.85 60.9 0.13 73.9 0.59 -46.1 1800 0.16 139.1 2.41 53.8 0.15 71.7 0.61 -53.5 2000 0.16 133.3 2.19 49.9 0.17 70.0 0.62 -58.3 100 0.92 -16.7 6.23 166.0 0.01 80.6 0.98 -5.7 www.vishay.com 3 BFR90A Vishay Semiconductors VCE/V IC/mA f/MHz S11 S21 LIN MAG ANG 300 0.87 500 800 ANG -47.6 5.55 0.69 -74.0 0.53 -106.0 1000 0.45 1200 10 10 www.vishay.com 4 5 10 14 S22 LIN MAG ANG LIN MAG ANG 142.1 0.03 67.1 0.93 -15.5 4.75 123.3 3.67 101.9 0.05 58.8 0.87 -22.2 0.06 54.1 0.82 -122.8 3.10 -29.5 90.9 0.07 54.4 0.80 0.39 -138.0 -33.9 2.67 82.3 0.08 56.0 0.79 1500 0.33 -38.0 -158.2 2.19 71.2 0.09 59.8 0.80 1800 -44.3 0.29 -177.6 1.87 61.2 0.10 63.6 0.81 2000 -50.8 0.27 172.2 1.70 56.1 0.11 65.5 0.83 -55.3 deg 10 S12 LIN MAG deg deg deg 100 0.80 -24.7 13.17 158.0 0.01 77.5 0.96 -8.8 300 0.58 -63.9 9.89 126.8 0.03 65.7 0.83 19.3 500 0.43 -89.9 7.21 108.5 0.04 63.5 0.76 -23.7 800 0.30 -117.6 4.94 91.6 0.06 65.9 0.72 -29.2 1000 0.26 -132.1 4.04 83.4 0.07 67.5 0.71 -33.2 1200 0.22 -145.9 3.42 76.8 0.08 69.1 0.71 -37.2 1500 0.19 -163.0 2.77 68.0 0.10 70.2 0.72 -43.6 1800 0.17 177.9 2.36 59.8 0.12 70.7 0.79 -50.3 2000 0.15 168.8 2.15 55.6 0.13 70.4 0.75 -54.7 100 0.65 -34.2 20.73 149.1 0.01 74.8 0.92 -11.8 300 0.39 -77.0 12.60 115.1 0.03 68.7 0.75 -19.8 500 0.27 -99.8 8.38 99.9 0.04 70.7 0.69 -22.6 800 0.19 -124.7 5.50 86.3 0.06 73.2 0.67 27.8 1000 0.17 -138.1 4.45 79.4 0.07 74.3 0.67 -31.9 1200 0.15 -151.4 3.76 74.0 0.08 74.2 0.67 -36.2 1500 0.13 -167.7 3.04 66.4 0.11 74.1 0.68 -42.7 1800 0.18 174.5 2.58 58.8 0.13 73.1 0.70 -49.5 2000 0.11 165.6 2.35 54.8 0.14 72.3 0.72 -53.9 100 0.56 -39.9 24.49 144.2 0.01 74.3 0.89 -13.1 300 0.31 -83.1 13.40 110.5 0.03 71.4 0.72 -19.3 500 0.21 -104.9 8.66 96.8 0.04 74.1 0.67 -21.6 800 0.16 -129.3 5.62 84.4 0.06 76.0 0.66 -26.9 1000 0.14 -142.2 4.55 78.0 0.07 76.3 0.66 -31.0 1200 0.13 -155.9 3.83 72.7 0.08 76.1 0.66 -35.5 1500 0.12 -170.8 3.10 65.4 0.10 75.3 0.68 -42.2 1800 0.11 169.7 2.63 58.1 0.13 74.0 0.70 -49.1 2000 0.11 162.3 2.39 54.3 0.14 73.0 0.71 -53.5 Document Number 85029 Rev. 1.4, 29-Apr-05 BFR90A Vishay Semiconductors 400 3.5 350 3.0 F - Noise Figure ( dB ) Ptot - Total Power Dissipation ( mW ) Typical Characteristics (Tamb = 25 C unless otherwise specified) 300 250 200 150 100 2.0 1.5 1.0 V CE = 10 V f = 800 MHz Z S = 50 0.5 50 0 0 0 20 40 60 80 100 120 140 160 Tamb - Ambient Temperature ( C ) 12845 0 12891 Figure 1. Total Power Dissipation vs. Ambient Temperature f T - Transition Frequency ( MHz ) 2.5 5 10 15 20 25 30 I C - Collector Current ( mA ) Figure 4. Noise Figure vs. Collector Current 6000 5000 4000 3000 2000 V CE = 10V f = 500 MHz 1000 0 0 5 10 15 20 25 30 I C - Collector Current ( mA ) 12889 Ccb - Collector Base Capacitance ( pF ) Figure 2. Transition Frequency vs. Collector Current 1.0 0.8 0.6 0.4 0.2 f = 1 MHz 0 0 12890 4 8 12 16 20 V CB - Collector Base Voltage ( V ) Figure 3. Collector Base Capacitance vs. Collector Base Voltage Document Number 85029 Rev. 1.4, 29-Apr-05 www.vishay.com 5 BFR90A Vishay Semiconductors VCE = 10 V, IC = 10 mA, Z0 = 50 S12 S11 90 j 120 j0.5 j2 60 0.1 0.3 30 150 j5 j0.2 0 0.8 0.2 2.0 GHz 0.5 1 1.0 2 0.3 -j0.2 5 180 2.0 GHz 8 -j5 0.1 -30 -150 -j0.5 -j2 13 510 0 16 13 512 -60 -120 -90 -j Figure 7. Reverse Transmission Coefficient Figure 5. Input Reflection Coefficient S22 S21 j 90 60 120 j0.5 j2 0.1 0.3 30 150 j5 j0.2 0.8 180 2.0 GHz 8 16 0 0 0.2 0.5 1 2 1.0 -j0.2 -150 -30 -120 -90 -60 Figure 6. Forward Transmission Coefficient www.vishay.com 6 0.1 -j5 2.0 GHz 13 513 13 512 5 0.5 -j2 -j0.5 -j Figure 8. Output Reflection Coefficient Document Number 85029 Rev. 1.4, 29-Apr-05 BFR90A Vishay Semiconductors Package Dimensions in mm 96 12244 Document Number 85029 Rev. 1.4, 29-Apr-05 www.vishay.com 7 BFR90A Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany www.vishay.com 8 Document Number 85029 Rev. 1.4, 29-Apr-05 Legal Disclaimer Notice Vishay Notice Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies. Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale. Document Number: 91000 Revision: 08-Apr-05 www.vishay.com 1