Silicon Power Transistor
2N3055H
Technical Data
Typical Applications : These devices are designed for general purpose switching
and amplifier applications.
Specification Fetaures :
F Complementary NPN Silicon Power Transistor
F 15 Amp / 100 V device in TO-204AA [ TO-3 ] package
F 115 Watts device
F Excellent safe operating area
Symbol Parameters / Conditions Ratings
Maximum Ratings :
V CEO Collector- Emitter Voltage 100 Vdc
V CER Collector- Emitter Voltage 70 Vdc
V CB Collector - Base Voltage 100 Vdc
V EB Emitter Base Voltage 7 Vdc
I CCollector Current – Continuos 15 Adc
I BBase Current 7 Adc
Thermal Characteristics :
R thjc Thermal resistance junction to case 1.52 °C/W
P D Total Power Dissipation @ Tc = 25 °C
Derate above 25 °C115 Watta
0.657 W /°C
Tj & T Stg Operating and Storage Junction Temperature Range -65 °C ….+ 200 °C
ELECTRICAL CHARACTERISTICS :
[ Tc = 25 °C unless otherwise noted ]
Characteristic Symbol Min Typ Max Unit
Off Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle ⊆ 2 % ]
Collector – Emitter Sustaining
Voltage [ Ic = 200 mAdc , IB = 0 ] VCEX(sus) 60 Vdc
Collector – Emitter Sustaining
Voltage [ Ic = 200 mAdc , R
BE =
100 Ohms ]
VCER(sus) 70 Vdc
Collector Cutoff Current [ V
CE =
30 Vdc , IB = 0 ] ICEO 0.7 mAdc
Collector Cutoff Current
[ V
CE = 100 Vdc , VBE(off) = 1.5
Vdc ]
[ V
CE = 100 V, VBE(off) = 1.5 Vdc ,
Tc = 150 °C ]
ICEX 1
5
mAdc
Emitter Base Leakage
[ VEB = 7 Vdc , Ic = 0 ] IEBO 5 mAdc
On Characteristics : [ Pulse Test : Pulse width = 300 µs , Duty Cycle ⊆ 2 % ]
DC Current Gain
[ Ic = 4 Adc , VCE = 4 Vdc ]
[ Ic = 10 Adc , VCE = 4 Vdc ]
hFE 20
570
Collector-Emitter Saturation
Voltage
[ Ic = 4 Adc , IB = 400 mAdc ]
[ Ic = 10 Adc , IB = 3.3 Adc ]
VCE(sat)
1.1
3
Vdc
Base-Emitter on Voltage
[ Ic = 4 Adc , VCE = 4 Vdc ] VBE(on) 1.5 Vdc
Dynamic Characteristics :
Current Gain – Bandwidth Product
[ I
C = 0.5 Adc , V CE = 10 Vdc , f =
1 MHz ]
fT2.5 MHz
Small signal current gain
[ I
C = 1 Adc , VCE = 4 Vdc , f = 1
KHz ]
hfe 15 120
Small signal current gain cutoff
frequency
[ I
C = 1 Adc , VCE = 4 Vdc , f = 1
KHz ]
fhfe 10 KHz
Second Breakdown Characteristics :
Second Breakdown Collector
Current with Base Forward Biased
t = 1 s [non-repetitive ] , V
CE = 40
Vdc
IS/b 2.87 Adc
