MBR30100PT thru MBR30200PT
Symbol Characteristics
I(AV) Maximum Average Forward Rectified Current @TC=125 C
IFSM
Maximum Ratings
30
250
A
A
Unit
o
Maximum Forward
Voltage (Note 1)
IF=15A @TJ=25 C
IF=15A @TJ=125 C
IF=30A @TJ=25 C
IF=30A @TJ=125 C
VF
IRMaximum DC Reverse Current
At Rated DC Blocking Voltage @TJ=25 C
@TJ=125 C
CJTypical Junction Capacitance Per Element (Note 3)
TJOperating Temperature Range
0.85
0.70
0.98
0.85
0.05
10
2.2
700
-55 to +150
-55 to +150
V
mA
pF
o
o
o
o
Typical Thermal Resistance (Note 2)ROJC C/W
o
C
o
NOTES: 1. 300us Pulse Width, Duty Cycle 2%.
2. Thermal Resistance Junction To Case.
3. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.
o
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave
Superimposed On Rated Load (JEDEC METHOD)
dv/dt Voltage Rate Of Change (Rated VR) 10000 V/us
C
o
TSTG Storage Temperature Range
FEATURES
* Metal of silicon rectifier, majority carrier conducton
* Guard ring for transient protection
* Low power loss, high efficiency
* High current capability, low VF
* High surge capacity
* For use in low voltage, high frequency inverters, free
whelling, and polarity protection applications
MECHANICAL DATA
* Case: TO-247AD molded plastic
* Polarity: As marked on the body
* Weight: 0.2 ounces, 5.6 grams
* Mounting position: Any
MBR30100PT
MBR30150PT
MBR30200PT
VRRM
V
100
150
200
VRMS
V
70
105
140
VDC
V
100
150
200
A=Anode, C=Cathode, TAB=Cathode
A
AC
C(TAB)
A C A Dimensions TO-247AD Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 1.5 2.49 0.087 0.102
o
MBR30100PT thru MBR30200PT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
INSTANTANEOUS FORWARD CURRENT, I
F
(A)
0.1
10
0122.5
FORWARD VOLTAGE DROP, V
FM
(V)
Figure 1. Max. Forward Voltage Drop
Characteristics (PerLeg)
1.50.5
100
1000
T
J
=25
¢J
T
J
=125
¢J
T
J
=175
¢J
1
REVERSE CURRENT, IR(mA)JUNCTION CAPACITANCE, CT(pF)
100
1000
0 40 80
REVERSE VOLTAGE, V
R
(V)
Figure 3. Typical Junction Capacitance Vs.
Reverse Voltage (Per Leg)
6020
TJ=25
¢J
100
Figure 2. Typical Values Of Reverse Current
Vs. Reverse Voltage (Per Leg)
0 40 806020 100
0.0001
REVERSE VOLTAGE, V
R
(V)
0.001
0.01
0.1
1
10
100
TJ=175
¢J
TJ=150
¢J
TJ=125
¢J
TJ=100
¢J
TJ=25
¢J
TJ=50
¢J
TJ=75
¢J
THERMAL IMPEDANCE ZthJC (C/W)
0.001
0.0000
1
0.01
t1, RECTANGULAR PULSE DURATION (SECONDS)
Figure 4. Max. Thermal Impedance ZthJC Characteristics (PerLeg)
SINGLE PULSE
(THERMAL RESISTANCE)
0.1
1
10
0.0001 0.001 0.01 0.1 1 10 100
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
Notes:
1.Duty factor D = t1 / t2
2.Peak T
j
= P
DM
x Z
thJC
+ T
C
P
DM
t2
t1
MBR30100PT thru MBR30200PT
Wide Temperature Range and High Tjm Schottky Barrier Rectifiers
ALLOWABLE CASE TEMPERATURE,
140
170
0 10 20 25
145
150
155
160
165
30 35
155
175
180
AVERAGE FORWARD CURRENT, I
F
(AV)
Figure 5. Max. Allowable Case Temperature
Vs. Average Forward Current (PerLeg)
DC
RTHJC(DC)=2.20 /W
AVERAGE POWER LOSS, WATTS
0
10
0
2
4
8
6
12
14
AVERAGE FORWARD CURRENT, I
F
(AV)
Figure 6. Forward PowerLoss Characteristics
(PerLeg)
DC
2 4 6 8 10 12 14 16 18 20 22 24
RMS LIMIT
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
NON-REPETITIVE SURGE CURRENT,
IFSM(A)
100 1000
100 10 10000
1000
SQUARE WAVE PULSE DURATION, TP(micro sec)
Figure 7. Max. Non-Repetitive Surge Current
(Per Leg)
AT ANY RATED LOAD CONDITION
AND WITH RATED VRRM APPLIED
FOLLOWING SURGE
J