Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 Six IGBTMOD™ + Brake
NX-Series Module
200 Amperes/600 Volts
CM200RX-12A
1Rev. 11/08
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module
consists of six IGBT Transistors in
a three phase bridge configuration
and a seventh IGBT with free-
wheel diode for dynamic braking.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low VCE(sat)
£ Discrete Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ AC Motor Control
£ Motion/Servo Control
£ Photovoltaic/Fuel Cell
Ordering Information:
Example: Select the complete
module number you desire from
the table below -i.e.
CM200RX-12A is a 600V (VCES),
200 Ampere Six-IGBTMOD™ +
Brake Power Module.
Type Current Rating VCES
Amperes Volts (x 50)
CM 200 12
Outline Drawing and Circuit Diagram
P(35)
B(4)
GWN(14)
GWP(18)
EWP(17)
GVN(22)
GVP(26)
EVP(25)
GUN(30)
EWN(13)EVN(21)EUN(29)
GUP(34)
EUP(33)
U(1) V(2) W(3)
GB(6)
N(36)
TH1
(11)
TH2
(10)
NTC
EB(5)
A
AH
AZ
BA
QR
S
T
U
VH
X Y Z Z
N M L K B
AN
AJ
AP
AMAMAM
AK
AMAM
AJ
AL
AX
AY
AK
AL
ALALAL
ALAL
Z
RQ
Q
R
D
E
F
G
H
J
P
P W
J
P
AA(4 PLACES)
DETAIL "B"
*ALL PIN DIMENSIONS WITHIN
A TOLERANCE OF ±0.5
AB
(6 PLACES)
DETAIL "A"
34 33 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 16 15 14 13
12
35
36
1 2 3 4
11
10
9
8
7
6
5
DETAIL "B"
C
RAT
AU
AQ
AV
AW
AS
AR
AL
AL
AD AE
AF
AG
BB
BC
BD
BE
AC
DETAIL "A"
Dimensions Inches Millimeters
A 5.39 136.9
B 3.03 77.1
C 0.67+0.04/-0.02 17.0+1.0/-0.5
D 4.79 121.7
E 4.33±0.02 110.0±0.5
F 3.89 99.0
G 3.72 94.5
H 0.83 21.14
J 0.37 6.5
K 2.44 62.0
L 2.26 57.5
M 1.97±0.02 50.0±0.5
N 1.53 39.0
P 0.24 6.0
Q 0.48 12.0
R 0.67 17.0
S 1.53 39.0
T 0.87 22.0
U 0.55 14.0
V 0.54 13.64
W 0.33 8.5
X 0.53 13.5
Y 0.81 20.71
Z 0.9 22.86
AA 0.22 Dia. 5.5 Dia.
AB M5 M5
AC 0.06 1.5
Dimensions Inches Millimeters
AD 0.51 13.0
AE 0.12 3.0
AF 0.21 5.4
AG 0.49 12.5
AH 0.81 20.5
AJ 0.30 7.75
AK 0.28 7.25
AL 0.15 3.81
AM 0.45 11.44
AN 0.14 3.5
AP 0.16 4.06
AQ 0.78 20.05
AR 0.03 0.8
AS 0.27 7.0
AT 0.16 4.2
AU 0.61 15.48
AV 0.60 15.24
AW 0.46 11.66
AX 0.04 1.15
AY 0.02 0.65
AZ 0.29 7.4
BA 0.05 6.2
BB 0.49 12.5
BC 0.17 Dia. 4.3 Dia.
BD 0.10 Dia. 2.5 Dia.
BE 0.08 Dia. 2.1Dia.
CM200RX-12A
Six IGBTMOD™ + Brake NX-Series Module
200 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
2Rev. 11/08
Absolute Maximum Ratings, Tj = 25°C unless otherwise specied
Characteristics Symbol CM200RX-12A Units
Power Device Junction Temperature Tj -40 to 150 °C
Storage Temperature Tstg -40 to 125 °C
Mounting Torque, M5 Mounting Screws — 31 in-lb
Mounting Torque, M5 Main Terminal Screws — 31 in-lb
Module Weight (Typical) — 330 Grams
Isolation Voltage, AC 1 minute, 60Hz Sinusoidal VISO 2500 Volts
Inverter Sector
Collector-Emitter Voltage (G-E Short) VCES 600 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current (TC = 68°C)* IC 200 Amperes
Peak Collector Current** ICM 400 Amperes
Emitter Current (TC = 25°C, Tj < 150°C)* IE*** 200 Amperes
Peak Emitter Current (Tj < 150°C)** IEM*** 400 Amperes
Maximum Collector Dissipation (TC = 25°C, Tj < 150°C)* PC 735 Watts
Brake Sector
Collector-Emitter Voltage (G-E Short) VCES 600 Volts
Gate-Emitter Voltage (C-E Short) VGES ±20 Volts
Collector Current (TC = 75°C)* IC 100 Amperes
Peak Collector Current** ICM 200 Amperes
Maximum Collector Dissipation (TC = 25°C, Tj < 150°C)* PC 400 Watts
Repetitive Peak Reverse Voltage (Clamp Diode Part) VRRM*** 600 Volts
Forward Current (TC = 25°C)* IF*** 100 Amperes
Forward Current (Clamp Diode Part)** IFM*** 200 Amperes
*TC, Tf measured point is just under the chips.
**Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed Tj(max) rating.
***Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CM200RX-12A
Six IGBTMOD™ + Brake NX-Series Module
200 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
3Rev. 11/08
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Inverter Sector
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate-Emitter Threshold Voltage VGE(th) IC = 20mA, VCE = 10V 5 6 7 Volts
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Collector-Emitter Saturation Voltage VCE(sat) IC = 200A, VGE = 15V, Tj = 25°C — 1.7 2.1 Volts
IC = 200A, VGE = 15V, Tj = 125°C — 1.9 — Volts
IC = 200A, VGE = 15V, Chip — 1.6 — Volts
Input Capacitance Cies — — 27.0 nF
Output Capacitance Coes VCE = 10V, VGE = 0V — — 2.7 nF
Reverse Transfer Capacitance Cres — — 0.8 nF
Total Gate Charge QG VCC = 300V, IC = 200A, VGE = 15V — 530 — nC
Inductive Turn-on Delay Time td(on) — — 120 ns
Load Turn-on Rise Time tr VCC = 300V, IC = 200A, — — 150 ns
Switch Turn-off Delay Time td(off) VGE = ±15V, — — 350 ns
Time Turn-off Fall Time tf RG = 5.6Ω, IE = 150A, — — 600 ns
Reverse Recovery Time* trr Inductive Load Switching Operation — — 200 ns
Reverse Recovery Charge* Qrr — 5.0 — µC
Emitter-Collector Voltage* VEC IE = 200A, VGE = 0V, Tj = 25°C — 2.0 2.8 Volts
IE = 200A, VGE = 0V, Tj = 125°C — 1.95 — Volts
IE = 200A, VGE = 0V, Chip — 1.9 — Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case** Rth(j-c)Q Per IGBT — — 0.17 °C/W
Thermal Resistance, Junction to Case** Rth(j-c)D Per FWDi — — 0.33 °C/W
Contact Thermal Resistance** Rth(c-f) Thermal Grease Applied — 0.015 — °C/W
Internal Gate Resistance RGint TC = 25°C — 0 — Ω
External Gate Resistance RG 3.0 — 30 Ω
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**TC, Tf measured point is just under the chips.
34
0
00
0
33 32 31 30 29 28 27 26 25 24 23 22
Dimensions in mm (Tolerance: ±1mm)
21 20 19 18 17 16 15 14 13
12
35
36
1 2 3 4
11
10
9
8
7
6
5
IGBT FWDi NTC Thermistor
Chip Location (Top View)
1 7. 4
22.9
33.9
44.9
55.9
79.4
92.4
106.0
39.7
24.4
UPVPWP
WNVNUN
Br
100.2
26.8
Th
22.9
33.9
44.9
55.9
79.4
91.4
10 1. 8
18.3
28.0
35.0
UPVPWP
WN
Br
VNUN
CHIP LOCATION (TOP VIEW)
CM200RX-12A
Six IGBTMOD™ + Brake NX-Series Module
200 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
4Rev. 11/08
Electrical and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Brake Sector
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Collector Cutoff Current ICES VCE = VCES, VGE = 0V — — 1.0 mA
Gate-Emitter Threshold Voltage VGE(th) IC = 10mA 5 6 7 Volts
Gate Leakage Current IGES VGE = VGES, VCE = 0V — — 0.5 µA
Collector-Emitter Saturation Voltage VCE(sat) IC = 100A, VGE = 15V, Tj = 25°C — 1.7 2.1 Volts
IC = 100A, VGE = 15V, Tj = 125°C — 1.9 — Volts
IC = 100A, VGE = 15V, Chip — 1.6 — Volts
Input Capacitance Cies — — 13.3 nF
Output Capacitance Coes VCE = 10V, VGE = 0V — — 1.4 nF
Reverse Transfer Capacitance Cres — — 0.45 nF
Total Gate Charge QG VCC = 300V, IC = 100A, VGE = 15V — 300 — nC
Repetitive Reverse Current* IRRM VR = VRRM — — 1.0 mA
Forward Voltage Drop * VF IF = 100A, Tj = 25°C — 2.0 2.8 Volts
IF = 100A, Tj = 125°C — 1.95 — Volts
IF = 100A, Chip — 1.9 — Volts
Thermal and Mechanical Characteristics, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Thermal Resistance, Junction to Case** Rth(j-c)Q Per IGBT — — 0.31 °C/W
Thermal Resistance, Junction to Case** Rth(j-c)D Per FWDi — — 0.59 °C/W
Contact Thermal Resistance** Rth(j-f) Thermal Grease Applied — 0.015 — °C/W
Internal Gate Resistance RGint TC = 25°C — 0 — Ω
External Gate Resistance RG 6 — 62 Ω
NTC Thermistor Sector, Tj = 25°C unless otherwise specied
Characteristics Symbol Test Conditions Min. Typ. Max. Units
Zero Power Resistance R TC = 25°C 4.85 5.00 5.15 kΩ
Deviation of Resistance ∆R/R TC = 100°C, R100 = 493Ω –7.3 — +7.8 %
B Constant B(25/50) B = (InR1 – InR2) / (1/T1 – 1/T2)*** — 3375 — K
Power Dissipation P25 TC = 25°C — — 10 mW
*Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
**TC, Tf measured point is just under the chips.
***R1: Resistance at Absolute Temperature T1(K), R2: Resistance at Absolute Temperature T2(K), T(K) = t(°C) + 273.15
CM200RX-12A
Six IGBTMOD™ + Brake NX-Series Module
200 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
5Rev. 11/08
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
CAPACITANCE, Cies, Coes, Cres, (nF)
CAPACITANCE VS. VCE
(INVERTER PART - TYPICAL)
100102
102
101
100
10-1
101
0 1 32 4
101
EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(INVERTER PART - TYPICAL)
102
103
EMITTER CURRENT, IE, (AMPERES)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
10
6 8 10 1412 16 18 20
8
6
4
2
0
Tj = 25°C
Tj = 25°C
Tj = 125°C
VGE = 0V
Cies
Coes
Cres
IC = 400A
IC = 200A
IC = 80A
COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)
COLLECTOR CURRENT, IC, (AMPERES)
OUTPUT CHARACTERISTICS
(INVERTER PART - TYPICAL)
0 2 4 6 8 10
0
VGE = 20V
10
11
12
13
15
98
Tj = 25°C
400
100
200
300
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(INVERTER PART - TYPICAL)
3.5
3.0
0
2.0
2.5
1.0
1.5
0.5
0400300100 200
VGE = 15V
Tj = 25°C
Tj = 125°C
10-1
COLLECTOR CURRENT, IC, (AMPERES)
104
103
101102
102
100
101
SWITCHING TIME, (ns)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(INVERTER PART - TYPICAL)
td(off)
td(on)
tr
VCC = 300V
VGE = ±15V
RG = 5.1Ω
Tj = 125°C
Inductive Load
tf
103
GATE RESISTANCE, RG, (Ω)
103
100101
102
100
101
SWITCHING TIME, (ns)
SWITCHING TIME VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
td(off)
td(on)
tr
VCC = 300V
VGE = ±15V
IC = 200A
Tj = 125°C
Inductive Load
tf
102
GATE CHARGE, QG, (nC)
GATE-EMITTER VOLTAGE, VGE, (VOLTS)
GATE CHARGE VS. VGE
(INVERTER PART)
20
0
16
12
8
4
0
200 800600400
VCC = 300V
VCC = 200V
IC = 200A
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY CHARACTERISTICS
(INVERTER PART - TYPICAL)
103
101102
102
101
103
VCC = 300V
VGE = ±15V
RG = 5.1Ω
Tj = 25°C
Inductive Load
Irr
trr
REVERSE RECOVERY, Irr (A), trr (ns)
CM200RX-12A
Six IGBTMOD™ + Brake NX-Series Module
200 Amperes/600 Volts
Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272
6Rev. 11/08
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(INVERTER PART - TYPICAL)
100
10-5 10-4 10-3
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Zth = Rth • (NORMALIZED VALUE)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.17°C/W
(IGBT)
Rth(j-c) =
0.33°C/W
(FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
TIME, (s)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(BRAKE PART - TYPICAL)
100
10-5 10-4 10-3
10-1
10-2
10-3
10-3 10-2 10-1 100101
10-1
10-2
10-3
Zth = Rth • (NORMALIZED VALUE)
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
0.31°C/W
(IGBT)
Rth(j-c) =
0.59°C/W
(FWDi)
NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c')
GATE RESISTANCE, RG, (Ω)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
102
100101
101
10-1
100
VCC = 300V
VGE = ±15V
IC = 200A
Tj = 125°C
Inductive Load
102
SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
Eon
Eoff
GATE RESISTANCE, RG, (Ω)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
102
100101
101
10-1
100
VCC = 300V
VGE = ±15V
IE = 200A
Tj = 125°C
Inductive Load
102
REVERSE RECOVERY SWITCHING LOSS VS.
GATE RESISTANCE
(INVERTER PART - TYPICAL)
EMITTER CURRENT, IE, (AMPERES)
REVERSE RECOVERY
SWITCHING LOSS, Err, (mJ/PULSE)
102
101
101102
100
10-1
VCC = 300V
VGE = ±15V
RG = 5.1Ω
Tj = 125°C
Inductive Load
103
REVERSE RECOVERY SWITCHING LOSS VS.
EMITTER CURRENT
(INVERTER PART - TYPICAL)
Err
Err
VCC = 300V
VGE = ±15V
RG = 5.1Ω
Tj = 125°C
Inductive Load
Eon
Eoff
COLLECTOR CURRENT, IC, (AMPERES)
SWITCHING LOSS, Eon, Eoff, (mJ/PULSE)
102
101
101102
100
10-1
103
SWITCHING LOSS VS.
COLLECTOR CURRENT
(INVERTER PART - TYPICAL)
0 1 32 4
100
101
FORWARD VOLTAGE, VF, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(BRAKE PART - TYPICAL)
102
103
FORWARD CURRENT, IF, (AMPERES)
COLLECTOR-CURRENT, IC, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE, VCE(sat), (VOLTS)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(BRAKE PART - TYPICAL)
3.5
3.0
0
2.0
2.5
1.0
1.5
0.5
020015050 100
VGE = 15V
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C