LT6A01LT6A07 VISHAY 6.0A Rectifier Features Diffused junction High current capability and low forward voltage drop Vishay Lite-On Power Semiconductor @ Surge overload rating to 400A peak Low reverse leakage current Plastic material - UL Recognition flammability classification 94V-0 Absolute Maximum Ratings Tj = 25C Repetitive peak reverse voltage LT6A01 Vrru 50 Vv =Working peak reverse voltage LT6A02 =VawM 100 Vv =DC Blocking voltage LT6A03 =VpR 200 V LT6A04 400 Vv LT6A05 600 Vv LT6A06 800 Vv LT6A07 1000 Vv Peak forward surge current lesm 400 A Average forward current Ta=60C lFay 6 A Junction and storage temperature range Ti=Tstg | -65...4150 | C Electrical Characteristics T; = 25C Forward voltage IpF=6A Ve 1 Vv Reverse current Ty=25C IR 10 uA Ta=100C IR 1 mA Diode capacitance VrR=4V, f=1MHz | LT6A01-04 Cp 140 pF LT6A05-07 Cp 70 pF Thermal resistance RthJA 15 KAW junction to ambient Rev. A2, 24-Jun-98LT6A01LT6A07 =a Vishay Lite-On Power Semiconductor VEISHAY Characteristics (Tj = 25C unless otherwise specified) ~ 8 = 500 <x ~ > 7 E c = 400 5 (6 3 Oo o oD g 3 3 300 aN E 4 v NA uw $ N oO o> 3 200 wo r INQ oO x 2 2 % h I a 100 = az 1 I, 8.3 ms Single Half-Sine-Wave ma = a JEDEC method 0 _ 0 1 1 a 1 0 25 50 75 100 125 150 175 200 1 10 100 15587 Tamb Ambient Temperature ( C ) 15589 Number of Cycles at 60 Hz Figure 1. Max. Average Forward Current vs. Figure 3. Max. Peak Forward Surge Current vs. Ambient Temperature Number of Cycles 100 1000 ~ L < = = 8 o 10 2 = wo = # LT6A01 LT6A04 nd o o o B 2 100 w Oo 5 3 10 8 LT6A0S LT6A07 I a + Tj = 25C 1 l= Pulse Width = 300 ps oO 2% Duty Cycle 0.1 10 0 0.2 0.6 1.0 1.4 1.8 1 10 100 15588 Ve Forward Voltage ( V ) 15590 Vr Reverse Voltage ( V ) Figure 2. Typ. Forward Current vs. Forward Voltage Figure 4. Typ. Diode Capacitance vs. Reverse Voltage 2 (4) Rev. A2, 24-Jun-98LT6A01LT6A07 VISHAY Vishay Lite-On Power Semiconductor Dimensions in mm A _ B . A R-6 Him Min Max 25.40 - + foe A B 3.60 9.10 technical drawings ( U 1.20 130 according to DIN specifications 14448 68.60 9.10 ALL Dimensions in mm Case: molded plastic Polarity: cathode band Approx. weight: 2.1 grams Mounting position: any Marking: type number Rev. A2, 24-Jun-98 3 (4)LT6A01LT6A07 Vishay Lite-On Power Semiconductor VEISHAY Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. Itis particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the nextten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. AnnexA, Bandlist oftransitional substances ofthe Montreal Protocol andthe London Amendments respectively 2. Class | and Il ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 4 (4) Rev. A2, 24-Jun-98