BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
1
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
●Designed for Complementary Use with
BD645, BD647, BD649 and BD651
●62.5 W at 25°C Case Temperature
●8 A Continuous Collector Current
●Minimum hFE of 750 at 3 V, 3 A
absolute maximum ratings at 25°C case temperature (unless otherwise noted)
NOTES: 1. This value applies for tp ≤ 0.3 ms, duty cycle ≤ 10%.
2. Derate linearly to 150°C case temperature at the rate of 0.4 W/°C.
3. Derate linearly to 150°C free air temperature at the rate of 16 mW/°C.
4. This rating is based on the capability of the transistor to operate safely in a circuit of: L = 20 mH, IB(on) = -5 mA, RBE = 100 Ω,
VBE(off) = 0, RS = 0.1 Ω, VCC = -20 V.
RATING SYMBOL VALUE UNIT
Collector-base voltage (IE = 0)
BD646
BD648
BD650
BD652
VCBO
-80
-100
-120
-140
V
Collector-emitter voltage (IB = 0)
BD646
BD648
BD650
BD652
VCEO
-60
-80
-100
-120
V
Emitter-base voltage VEBO -5 V
Continuous collector current IC-8 A
Peak collector current (see Note 1) ICM -12 A
Continuous base current IB-0.3 A
Continuous device dissipation at (or below) 25°C case temperature (see Note 2) Ptot 62.5 W
Continuous device dissipation at (or below) 25°C free air temperature (see Note 3) Ptot 2W
Unclamped inductive load energy (see Note 4) ½LIC250 mJ
Operating junction temperature range Tj-65 to +150 °C
Storage temperature range Tstg -65 to +150 °C
Lead temperature 3.2 mm from case for 10 seconds TL260 °C
B
C
E
TO-220 PACKAGE
(TOP VIEW)
Pin 2 is in electrical contact with the mounting base.
MDTRACA
1
2
3
This series is obsolete and
not recommended for new designs.
OBSOLETE
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
2
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
NOTES: 5. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
6. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER TEST CONDITIONS MIN TYP MAX UNIT
V(BR)CEO
Collector-emitter
breakdown voltage IC = -30 mA IB = 0 (see Note 5)
BD646
BD648
BD650
BD652
-60
-80
-100
-120
V
ICEO
Collector-emitter
cut-off current
VCE = -30 V
VCE = -40 V
VCE = -50 V
VCE = -60 V
IB=0
IB=0
IB=0
IB=0
BD646
BD648
BD650
BD652
-0.5
-0.5
-0.5
-0.5
mA
ICBO
Collector cut-off
current
VCB = -60 V
VCB = -80 V
VCB = -100 V
VCB = -120 V
VCB = -40 V
VCB = -50 V
VCB = -60 V
VCB = -70 V
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
IE=0
TC = 150°C
TC = 150°C
TC = 150°C
TC = 150°C
BD646
BD648
BD650
BD652
BD646
BD648
BD650
BD652
-0.2
-0.2
-0.2
-0.2
-2.0
-2.0
-2.0
-2.0
mA
IEBO
Emitter cut-off
current VEB = -5 V IC= 0 (see Notes 5 and 6) -5 mA
hFE
Forward current
transfer ratio VCE = -3 V IC= -3 A (see Notes 5 and 6) 750
VCE(sat)
Collector-emitter
saturation voltage
IB = -12 mA
IB = -50 mA
IC= -3A
IC= -5A (see Notes 5 and 6) -2
-2.5 V
VBE(sat)
Base-emitter
saturation voltage IB = -50 mA IC= -5 A (see Notes 5 and 6) -3 V
VBE(on)
Base-emitter
voltage VCE = -3 V IC= -3 A (see Notes 5 and 6) -2.5 V
thermal characteristics
PARAMETER MIN TYP MAX UNIT
RθJC Junction to case thermal resistance 2.0 °C/W
RθJA Junction to free air thermal resistance 62.5 °C/W
OBSOLETE
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
3
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
TYPICAL CHARACTERISTICS
Figure 1. Figure 2.
Figure 3.
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -1·0 -10
hFE - Typical DC Current Gain
50000
100
1000
10000
TCS135AD
TC = -40°C
TC = 25°C
TC = 100°C
VCE = -3 V
tp = 300 µs, duty cycle < 2%
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -1·0 -10
VCE(sat) - Collector-Emitter Saturation Voltage - V
-2·0
-1·5
-1·0
-0·5
TCS135AB
TC = -40°C
TC = 25°C
TC = 100°C
tp = 300 µs, duty cycle < 2%
IB = IC / 100
BASE-EMITTER SATURATION VOLTAGE
vs
COLLECTOR CURRENT
IC - Collector Current - A
-0·5 -1·0 -10
VBE(sat) - Base-Emitter Saturation Voltage - V
-3·0
-2·5
-2·0
-1·5
-1·0
-0·5
TCS135AC
TC = -40°C
TC = 25°C
TC = 100°C
IB = IC / 100
tp = 300 µs, duty cycle < 2%
OBSOLETE
BD646, BD648, BD650, BD652
PNP SILICON POWER DARLINGTONS
4
MAY 1993 - REVISED SEPTEMBER 2002
Specifications are subject to change without notice.
MAXIMUM SAFE OPERATING REGIONS
Figure 4.
THERMAL INFORMATION
Figure 5.
MAXIMUM FORWARD-BIAS
SAFE OPERATING AREA
VCE - Collector-Emitter Voltage - V
-1·0 -10 -100 -1000
IC - Collector Current - A
-0.01
-0·1
-1·0
-10 SAS135AC
BD646
BD648
BD650
BD652
MAXIMUM POWER DISSIPATION
vs
CASE TEMPERATURE
TC - Case Temperature - °C
0 255075100125150
Ptot - Maximum Power Dissipation - W
0
10
20
30
40
50
60
70
80 TIS130AC
OBSOLETE
