TO-220 Plastic-Encapsulate Transistors 3DD13007 FEATURES Power dissipation Poy 2 2 W CTamb=25) Collector current lowe a A Collector-base voltage Verceo: TOO Operating and storage junction lamperature range Ty, Tay 850 to +150% ELECTRICAL CHARACTERISTICS (Tamb=250 TRANSISTOR ( NPN TO 220 5 i = | [ = 1.BASE ] ij POCOLLECTOR j | | ZLEMITTER 123 unless otherwise specified) Parameter Syrmbal Test conditions MIN TiF MAX UMIT Collactor-base breakdown voltage VIBRicen Io= mA, le=0 Foo Vv Collector-emitter breakdown voltage VIBRiceo lo= 10mA. p= 400 V Emitter-base breakdown voltage VIBR pn r= ImAL [e=0 a V Collector cut-off current lepo Vee= TOOV, k=D 1 rrr Emitter cut-off current lees Vee OV, iad Too uA, hee 4 Vers SV, be 2A & ao OC current gain hre iz VoesS Vi b=5A 5 30 Collector-emitter saturation voltage Vopisatl lp=24[p=0.45, 1 Vv Base-amitter saturation voltage Vor( sat] ln=2Ay, n= O44 12 yi Transition frequency ti e oe cree 4 MHe Collector oulput capacitance Cas Vee 10 Je=0, 0.1MHz 50 pF Fall time b VWoorlZ5V, [cau oF ws Storage time te Iny=-F=1 A a Us CLASSIFICATION OF here Rank Range 8-15 16-20 20-25 25-30 30-35 35-40