TXN/TYN 0512 --->
TXN/TYN 1012
April 1995
SCR
Symbol Parameter Value Unit
IT(RMS) RMS on-state current
(180°conduction angle) TXN
TYN Tc=80°C
Tc=90°C12 A
IT(AV) Average on-state current
(180°conduction angle,single phase circuit) TXN
TYN Tc=80°C
Tc=90°C8A
I
TSM Non repetitive surge peak on-state current
( Tj initial = 25°C) tp=8.3 ms 125 A
tp=10 ms 120
I2tI
2
t value tp=10 ms 72 A2s
dI/dt Critical rate of rise of on-state current
Gate supply : IG= 100 mA diG/dt = 1 A/µs100 A/µs
Tstg
Tj Storage and operating junction temperature range - 40 to + 150
- 40 to + 125 °C
°C
Tl Maximum lead temperature for soldering during 10 s at 4.5 mm
from case 260 °C
TO220AB
(Plastic)
KAG
.HIGH SURGE CAPABILITY
.HIGH ON-STATE CURRENT
.HIGH STABILITYAND RELIABILITY
.TXNSerie :
INSULATEDVOLTAGE= 2500V(RMS)
(ULRECOGNIZED : E81734)
DESCRIPTION
Symbol Parameter TYN/TXN Unit
0512 112 212 412 612 812 1012
VDRM
VRRM Repetitive peak off-state voltage
Tj = 125 °C50 100 200 400 600 800 1000 V
ABSOLUTE RATINGS (limiting values)
FEATURES
The TYN/TXN 0512 ---> TYN/TXN 1012 Family
of Silicon Controlled Rectifiers uses a high per-
formance glass passivated technology.
This general purpose Family of Silicon Controlled
Rectifiers is designed for power supplies up to
400Hz on resistive or inductive load.
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GATE CHARACTERISTICS (maximum values)
Symbol Parameter Value Unit
Rth (j-a) Junction to ambient 60 °C/W
Rth (j-c) DC Junction to case for DC TXN 3.5 °C/W
TYN 2.5
Symbol Test Conditions Value Unit
IGT VD=12V (DC) RL=33ΩTj=25°C MAX 15 mA
VGT VD=12V (DC) RL=33ΩTj=25°C MAX 1.5 V
VGD VD=VDRM RL=3.3kΩTj= 125°C MIN 0.2 V
tgt VD=VDRM IG= 40mA
dIG/dt = 0.5A/µsTj=25°C TYP 2 µs
ILIG= 1.2 IGT Tj=25°C TYP 50 mA
IHIT= 100mA gate open Tj=25°C MAX 30 mA
VTM ITM= 24A tp= 380µs Tj=25°C MAX 1.6 V
IDRM
IRRM VDRM Rated
VRRM Rated Tj=25°C MAX 0.01 mA
Tj= 125°C3
dV/dt Linear slope up to VD=67%VDRM
gate open Tj= 125°C MIN 200 V/µs
tq VD=67%VDRM ITM= 24A VR= 25V
dITM/dt=30 A/µsdV
D
/dt= 50V/µsTj= 125°C TYP 70 µs
PG (AV) =1W P
GM = 10W (tp = 20 µs) IFGM = 4A (tp = 20 µs) VRGM =5V.
ELECTRICAL CHARACTERISTICS
THERMAL RESISTANCES
TXN/TYN 0512 ---> TXN/TYN 1012
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Fig.3 : Maximum average power dissipation versus
average on-state current (TYN). Fig.4 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (TYN).
Fig.1 : Maximum average power dissipation versus
average on-state current (TXN). Fig.2 : Correlation between maximum average power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (TXN).
Fig.5 : Average on-state current versus case
temperature (TXN). Fig.6 : Average on-state current versus case
temperature (TYN).
TXN/TYN 0512 ---> TXN/TYN 1012
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Fig.9 : Non repetitive surge peak on-state current
versus number of cycles. Fig.10 : Non repetitive surge peak on-state current for
a sinusoidal pulse with width : t ≤10 ms, and
corresponding value of I2t.
Fig.8 : Relative variation of gate trigger current versus
junction temperature.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.1
1Zth/Rth
Zth(j-c)
Zth(j-a)
tp(s)
Fig.7 : Relative variation of thermal impedance versus
pulse duration.
Fig.11 : On-state characteristics (maximum values).
TXN/TYN 0512 ---> TXN/TYN 1012
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PACKAGE MECHANICAL DATA
TO220AB Plastic
Cooling method : by conduction (method C)
Marking : type number
Weight : 2.3 g
Recommended torque value : 0.8 m.N.
Maximum torque value : 1 m.N.
A
GJH
D
B
C
M
L
F
O
P
=N=
I
REF. DIMENSIONS
Millimeters Inches
Min. Max. Min. Max.
A 10.00 10.40 0.393 0.409
B 15.20 15.90 0.598 0.625
C 13.00 14.00 0.511 0.551
D 6.20 6.60 0.244 0.259
F 3.50 4.20 0.137 0.165
G 2.65 2.95 0.104 0.116
H 4.40 4.60 0.173 0.181
I 3.75 3.85 0.147 0.151
J 1.23 1.32 0.048 0.051
L 0.49 0.70 0.019 0.027
M 2.40 2.72 0.094 0.107
N 4.80 5.40 0.188 0.212
O 1.14 1.70 0.044 0.066
P 0.61 0.88 0.024 0.034
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability
for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may
result from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics.
Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all
information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems
without express written approval of SGS-THOMSON Microelectronics.
1995 SGS-THOMSON Microelectronics - Printed in Italy - All rights reserved.
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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TXN/TYN 0512 ---> TXN/TYN 1012
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