SCHOTTKY DIE SPECIFICATION TYPE: MBR3100
100 V 3 A ( Low Ir) Single Anode
SYM Die Sort UNIT
DC Blocking Voltage: Ir=1mA(for wafer form) VRRM 105 Volt
Ir=0.5mA (for dice form) IFAV Amp
VF MAX 0.75 Volt
IR MAX 0.09 mA
Cj MAX pF
IFSM Amp
Tj °C
TSTG °C
Specification apply to die only. Actual performance may degrade when assembled.
MEMT does not guarantee device performance after assembly.
Data sheet information is subjected to change without notice.
DIM um2Mil2
A1524 60.00
B1424 56.1
C1444 56.9
D254 10
305 12
Operating Junction Temperature
Storage Temperatures
ITEM
Die Size
DICE OUTLINE DRAWING
Maximum Junction Capacitance @ 0V, 1MHZ
MAXIMUM RATINGS
Nonrepetitive Peak Surge Current
VR= 100 Volt, Ta=25°C
ELECTRICAL CHARACTERISTICS
Average Rectified Forward Current
Maximum Instantaneous Forward Voltage
General Description:
80
-65 to +125
-65 to +125
0.76 @ 3 Amperes, Ta=25°C
Maximum Instantaneous Reverse Voltage
PS:
(1)Cutting street width is around 80um(3.14mil).
(2)Both of top-side and back-side metals are Ti/Ni/Ag.
Thickness (Max)
0.1
Top Metal Pad Size
Passivation Seal
Thickness (Min)
Micro-Electro-Magnetical Tech Co.
Spec. Limit
100
3
B
C
A
Top-side Metal
DSiO2 Passivation
P+ Guard Ring
Back-side Metal
