PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
7 April 2015 Product data sheet
1. General description
NPN low VCEsat Breakthrough In Small Signal (BISS) transistor, encapsulated in an
ultra thin SOT1061 leadless small Surface-Mounted Device (SMD) plastic package with
medium power capability.
PNP complement: PBSS5330PA.
2. Features and benefits
•Low collector-emitter saturation voltage VCEsat
•High collector current capability IC and ICM
•Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
•Exposed heat sink for excellent thermal and electrical conductivity
•Leadless small SMD plastic package with medium power capability
3. Applications
•Loadswitch
•Battery-driven devices
•Power management
•Charging circuits
•Power switches (e.g. motors, fans)
4. Quick reference data
Table 1. Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
VCEO collector-emitter
voltage
open base - - 30 V
ICcollector current - - 3 A
ICM peak collector current single pulse; tp ≤ 1 ms - - 5 A
RCEsat collector-emitter
saturation resistance
IC = 3 A; IB = 300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- 75 100 mΩ
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
PBSS4330PA All information provided in this document is subject to legal disclaimers.
Product data sheet 7 April 2015 2 / 16
5. Pinning information
Table 2. Pinning information
Pin Symbol Description Simplified outline Graphic symbol
1 B base
2 E emitter
3 C collector
Transparent top view
1 2
3
DFN2020-3 (SOT1061)
sym021
3
2
1
6. Ordering information
Table 3. Ordering information
PackageType number
Name Description Version
PBSS4330PA DFN2020-3 DFN2020-3: plastic thermal enhanced ultra thin small outline
package; no leads; 3 terminals; body 2 x 2 x 0.65 mm
SOT1061
7. Marking
Table 4. Marking codes
Type number Marking code
PBSS4330PA AH
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
PBSS4330PA All information provided in this document is subject to legal disclaimers.
Product data sheet 7 April 2015 3 / 16
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 30 V
VEBO emitter-base voltage open collector - 6 V
ICcollector current - 3 A
ICM peak collector current single pulse; tp ≤ 1 ms - 5 A
IBbase current - 500 mA
[1] - 500 mW
[2] - 1 W
[3] - 1.25 W
Ptot total power dissipation Tamb ≤ 25 °C
[4] - 2.1 W
Tjjunction temperature - 150 °C
Tamb ambient temperature -55 150 °C
Tstg storage temperature -65 150 °C
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
Tamb (°C)
- 75 17512525 75- 25
006aab999
1.0
1.5
0.5
2.0
2.5
Ptot
(W)
0.0
(1)
(3)
(2)
(4)
(1) Ceramic PCB, Al2O3, standard footprint
(2) FR4 PCB, mounting pad for collector 6 cm2
(3) FR4 PCB, mounting pad for collector 1 cm2
(4) FR4 PCB, standard footprint
Fig. 1. Power derating curves
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
PBSS4330PA All information provided in this document is subject to legal disclaimers.
Product data sheet 7 April 2015 4 / 16
9. Thermal characteristics
Table 6. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
[1] - - 250 K/W
[2] - - 125 K/W
[3] - - 100 K/W
Rth(j-a) thermal resistance
from junction to
ambient
in free air
[4] - - 60 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2.
[4] Device mounted on a ceramic PCB, Al2O3, standard footprint.
006aab979
10
1
102
103
Zth(j-a)
(K/W)
10- 1
10- 5 1010- 2
10- 4 102
10- 1
tp(s)
10- 3 103
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB, standard footprint
Fig. 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
PBSS4330PA All information provided in this document is subject to legal disclaimers.
Product data sheet 7 April 2015 5 / 16
006aab980
10
1
102
103
Zth(j-a)
(K/W)
10- 1
10- 5 1010- 2
10- 4 102
10- 1
tp(s)
10- 3 103
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
FR4 PCB, mounting pad for collector 1 cm2
Fig. 3. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
006aac000
10
1
102
103
Zth(j-a)
(K/W)
10- 1
10- 5 1010- 2
10- 4 102
10- 1
tp(s)
10- 3 103
1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33 0.5
0.75
FR4 PCB, mounting pad for collector 6 cm2
Fig. 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
PBSS4330PA All information provided in this document is subject to legal disclaimers.
Product data sheet 7 April 2015 6 / 16
006aab982
10- 5 1010- 2
10- 4 102
10- 1
tp(s)
10- 3 103
1
10
1
102
Zth(j-a)
(K/W)
10- 1
0
duty cycle = 1
0.01
0.02
0.05
0.1
0.2
0.33
0.5
0.75
Ceramic PCB, Al2O3, standard footprint
Fig. 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
PBSS4330PA All information provided in this document is subject to legal disclaimers.
Product data sheet 7 April 2015 7 / 16
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
VCB = 30 V; IE = 0 A; Tamb = 25 °C - - 100 nAICBO collector-base cut-off
current VCB = 30 V; IE = 0 A; Tj = 150 °C - - 50 µA
ICES collector-emitter cut-off
current
VCE = 24 V; VBE = 0 V; Tamb = 25 °C - - 100 nA
IEBO emitter-base cut-off
current
VEB = 5 V; IC = 0 A; Tamb = 25 °C - - 100 nA
VCE = 2 V; IC = 0.5 A; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
300 465 -
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
270 435 700
VCE = 2 V; IC = 2 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
230 370 -
hFE DC current gain
VCE = 2 V; IC = 3 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
180 310 -
IC = 0.5 A; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- 40 60 mV
IC = 1 A; IB = 50 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- 80 110 mV
IC = 2 A; IB = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- 155 220 mV
VCEsat collector-emitter
saturation voltage
- 220 300 mV
RCEsat collector-emitter
saturation resistance
IC = 3 A; IB = 300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C - 75 100 mΩ
IC = 2 A; IB = 100 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- 0.95 1.1 VVBEsat base-emitter saturation
voltage
IC = 3 A; IB = 300 mA; pulsed;
tp ≤ 300 µs; δ ≤ 0.02 ; Tamb = 25 °C
- 1.07 1.2 V
VBEon base-emitter turn-on
voltage
VCE = 2 V; IC = 1 A; pulsed; tp ≤ 300 µs;
δ ≤ 0.02 ; Tamb = 25 °C
- 0.76 1 V
tddelay time - 11 - ns
trrise time - 52 - ns
ton turn-on time - 63 - ns
tsstorage time - 230 - ns
tffall time - 40 - ns
toff turn-off time
VCC = 9 V; IC = 2 A; IBon = 0.1 A;
IBoff = -0.1 A; Tamb = 25 °C
- 270 - ns
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
PBSS4330PA All information provided in this document is subject to legal disclaimers.
Product data sheet 7 April 2015 8 / 16
Symbol Parameter Conditions Min Typ Max Unit
fTtransition frequency VCE = 5 V; IC = 100 mA; f = 100 MHz;
Tamb = 25 °C
100 210 - MHz
Cccollector capacitance VCB = 10 V; IE = 0 A; ie = 0 A;
f = 1 MHz; Tamb = 25 °C
- 21 30 pF
006aac044
400
200
600
800
hFE
0
IC(mA)
10- 1 104
103
1 102
10
(1)
(3)
(2)
VCE = 2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 6. DC current gain as a function of collector
current; typical values
VCE (V)
0.0 2.01.60.8 1.20.4
006aac045
2.0
3.0
1.0
4.0
5.0
IC
(A)
0.0
IB(mA) = 25
17.5
12.5
7.5
2.5
20
22.5
5
10
15
Tamb = 25 °C
Fig. 7. Collector current as a function of collector-
emitter voltage; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
PBSS4330PA All information provided in this document is subject to legal disclaimers.
Product data sheet 7 April 2015 9 / 16
006aac046
0.4
0.8
1.2
VBE
(V)
0.0
IC(mA)
10- 1 104
103
1 102
10
(1)
(3)
(2)
VCE = 2 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 8. Base-emitter voltage as a function of collector
current; typical values
006aac047
0.6
0.8
0.4
1.0
1.2
VBEsat
(V)
0.2
IC(mA)
10- 1 104
103
1 102
10
(1)
(3)
(2)
IC/IB = 20
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig. 9. Base-emitter saturation voltage as a function of
collector current; typical values
006aac048
10- 1
10- 2
1
VCEsat
(V)
10- 3
IC(mA)
10- 1 104
103
1 102
10
(1)
(2)
(3)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 10. Collector-emitter saturation voltage as a
function of collector current; typical values
006aac049
10- 1
10- 2
1
VCEsat
(V)
10- 3
IC(mA)
10- 1 104
103
1 102
10
(1)
(3)
(2)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig. 11. Collector-emitter saturation voltage as a
function of collector current; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
PBSS4330PA All information provided in this document is subject to legal disclaimers.
Product data sheet 7 April 2015 10 / 16
006aac050
IC(mA)
10- 1 104
103
1 102
10
10- 1
1
10
102
RCEsat
(Ω)
10- 2
(1)
(2)
(3)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig. 12. Collector-emitter saturation resistance as a
function of collector current; typical values
IC(mA)
10- 1 104
103
1 102
10
006aac051
1
10- 1
102
10
103
RCEsat
(Ω)
10- 2
(1)
(3)
(2)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig. 13. Collector-emitter saturation resistance as a
function of collector current; typical values
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
PBSS4330PA All information provided in this document is subject to legal disclaimers.
Product data sheet 7 April 2015 11 / 16
11. Test information
006aaa003
IBon (100 %)
IB
input pulse
(idealized waveform)
IBoff
90 %
10 %
IC(100 %)
IC
td
ton
90 %
10 %
tr
output pulse
(idealized waveform)
tf
t
ts
toff
Fig. 14. BISS transistor switching time definition
RC
R2
R1
DUT
mlb826
Vo
RB
(probe)
450 Ω
(probe)
450 Ω
oscilloscope oscilloscope
VBB
VI
VCC
Fig. 15. Test circuit for switching times
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
PBSS4330PA All information provided in this document is subject to legal disclaimers.
Product data sheet 7 April 2015 12 / 16
12. Package outline
09-11-12Dimensions in mm
0.65
max
2.1
1.9
1.6
1.4
0.35
0.25
0.45
0.35
2.1
1.91.1
0.9
0.3
0.2
1.05
0.95
1.3
2
3
1
Fig. 16. Package outline DFN2020-3 (SOT1061)
13. Soldering
occupied area
solder paste = solder lands Dimensions in mm
sot1061_fr
solder resist
0.4
2.1
1.3
0.25
0.25 0.25
1.1 1.2
0.55
0.6
2.3
0.5 (2×)
0.5 (2×) 0.6 (2×)
0.4 (2×)
0.5
1.6
1.7
1.05
Fig. 17. Reflow soldering footprint for DFN2020-3 (SOT1061)
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
PBSS4330PA All information provided in this document is subject to legal disclaimers.
Product data sheet 7 April 2015 13 / 16
14. Revision history
Table 8. Revision history
Data sheet ID Release date Data sheet status Change notice Supersedes
PBSS4330PA v.2 20150407 Product data sheet - PBSS4330PA v.1
Modifications: •Condition VCE changed for parameter ICES in Table 7, Characteristics
PBSS4330PA v.1 20100419 Product data sheet - -
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
PBSS4330PA All information provided in this document is subject to legal disclaimers.
Product data sheet 7 April 2015 14 / 16
15. Legal information
15.1 Data sheet status
Document
status [1][2]
Product
status [3]
Definition
Objective
[short] data
sheet
Development This document contains data from
the objective specification for product
development.
Preliminary
[short] data
sheet
Qualification This document contains data from the
preliminary specification.
Product
[short] data
sheet
Production This document contains the product
specification.
[1] Please consult the most recently issued document before initiating or
completing a design.
[2] The term 'short data sheet' is explained in section "Definitions".
[3] The product status of device(s) described in this document may have
changed since this document was published and may differ in case of
multiple devices. The latest product status information is available on
the Internet at URL http://www.nexperia.com.
15.2 Definitions
Preview — The document is a preview version only. The document is still
subject to formal approval, which may result in modifications or additions.
Nexperia does not give any representations or warranties as to
the accuracy or completeness of information included herein and shall have
no liability for the consequences of use of such information.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. Nexperia does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences
of use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is
intended for quick reference only and should not be relied upon to contain
detailed and full information. For detailed and full information see the
relevant full data sheet, which is available on request via the local Nexperia
sales office. In case of any inconsistency or conflict with the
short data sheet, the full data sheet shall prevail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
Nexperia and its customer, unless Nexperia and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the Nexperia product
is deemed to offer functions and qualities beyond those described in the
Product data sheet.
15.3 Disclaimers
Limited warranty and liability — Information in this document is believed
to be accurate and reliable. However, Nexperia does not give
any representations or warranties, expressed or implied, as to the accuracy
or completeness of such information and shall have no liability for the
consequences of use of such information. Nexperia takes no
responsibility for the content in this document if provided by an information
source outside of Nexperia.
In no event shall Nexperia be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation -
lost profits, lost savings, business interruption, costs related to the removal
or replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, Nexperia’s aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of Nexperia.
Right to make changes — Nexperia reserves the right to
make changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — Nexperia products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of a Nexperia product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. Nexperia and its suppliers accept no liability for
inclusion and/or use of Nexperia products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Quick reference data — The Quick reference data is an extract of the
product data given in the Limiting values and Characteristics sections of this
document, and as such is not complete, exhaustive or legally binding.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. Nexperia makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their
applications and products using Nexperia products, and Nexperia
accepts no liability for any assistance with applications or
customer product design. It is customer’s sole responsibility to determine
whether the Nexperia product is suitable and fit for the
customer’s applications and products planned, as well as for the planned
application and use of customer’s third party customer(s). Customers should
provide appropriate design and operating safeguards to minimize the risks
associated with their applications and products.
Nexperia does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default
in the customer’s applications or products, or the application or use by
customer’s third party customer(s). Customer is responsible for doing all
necessary testing for the customer’s applications and products using Nexperia
products in order to avoid a default of the applications
and the products or of the application or use by customer’s third party
customer(s). Nexperia does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those
given in the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — Nexperia
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nexperia.com/profile/terms, unless otherwise
agreed in a valid written individual agreement. In case an individual
agreement is concluded only the terms and conditions of the respective
agreement shall apply. Nexperia hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of Nexperia products by customer.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
PBSS4330PA All information provided in this document is subject to legal disclaimers.
Product data sheet 7 April 2015 15 / 16
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific Nexperia product is automotive qualified,
the product is not suitable for automotive use. It is neither qualified nor
tested in accordance with automotive testing or application requirements.
Nexperia accepts no liability for inclusion and/or use of non-
automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automotive specifications and standards,
customer (a) shall use the product without Nexperia’s warranty
of the product for such automotive applications, use and specifications, and
(b) whenever customer uses the product for automotive applications beyond
Nexperia’s specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies Nexperia for any
liability, damages or failed product claims resulting from customer design and
use of the product for automotive applications beyond Nexperia’s
standard warranty and Nexperia’s product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
15.4 Trademarks
Notice: All referenced brands, product names, service names and
trademarks are the property of their respective owners.
© Nexperia B.V. 2017. All rights reserved
Nexperia PBSS4330PA
30 V, 3 A NPN low VCEsat (BISS) transistor
PBSS4330PA All information provided in this document is subject to legal disclaimers.
Product data sheet 7 April 2015 16 / 16
16. Contents
1 General description ............................................... 1
2 Features and benefits ............................................1
3 Applications ........................................................... 1
4 Quick reference data ............................................. 1
5 Pinning information ............................................... 2
6 Ordering information .............................................2
7 Marking ................................................................... 2
8 Limiting values .......................................................3
9 Thermal characteristics .........................................4
10 Characteristics .......................................................7
11 Test information ................................................... 11
12 Package outline ................................................... 12
13 Soldering .............................................................. 12
14 Revision history ...................................................13
15 Legal information .................................................14
15.1 Data sheet status ............................................... 14
15.2 Definitions ...........................................................14
15.3 Disclaimers .........................................................14
15.4 Trademarks ........................................................ 15
© Nexperia B.V. 2017. All rights reserved
For more information, please visit: http://www.nexperia.com
For sales office addresses, please send an email to: salesaddresses@nexperia.com
Date of release:
07 April 2015
