MITA10WB1200TMH Advanced Technical Information Converter - Brake - Inverter Module Standard Trench IGBTT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = IFSM 90 A IC25 = 17 A IC25 = 17 A = 300 A VCE(sat) = 1.9 V VCE(sat) = 1.9 V Part name (Marking on product) MITA10WB1200TMH P P1 T1 D8 D10 D12 T3 D7 D5 D3 G1 NTC1 T5 D1 G3 G5 L1 L2 B L3 T6 T4 D2 NTC2 GB W V T2 T7 D9 D11 D13 U G4 G2 D6 D4 E 72873 G6 Pin configuration see outlines. N NB EU EV EW Features: Application: Package: * High level of integration - only one power semiconductor module required for the whole drive * Inverter with standard trench IGBTs - very low saturation voltage - positive temperature coefficient - short tail current * Epitaxial free wheeling diodes with hiperfast soft reverse recovery * Temperature sense included * AC motor drives * Pumps, Fans * Washing machines * Air-conditioning system * Inverter and power supplies * "Mini" package * Assembly height is 17 mm * Insulated base plate * Pins suitable for wave soldering and PCB mounting * Assembly clips available - IXKU 5-505 screw clamp - IXRB 5-506 click clamp * UL registered E72873 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved 20070611 -8 Advanced Technical Information MITA10WB1200TMH Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage 1200 V 20 30 V V IC25 IC80 collector current TC = 25C TC = 80C 17 12 A A Ptot total power dissipation TC = 25C 70 W VCE(sat) collector emitter saturation voltage IC = 10 A; VGE = 15 V 1.9 2.3 2.2 V V VGE(th) gate emitter threshold voltage IC = 0.3 A; VGE = VCE TVJ = 25C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ =125C 5.5 6.5 V 0.6 mA mA IGES gate emitter leakage current VGE = 20 V Cies input capacitance 150 nA VCE = 25 V; VGE = 0 V; f = 1 MHz QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 10 A td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 10 A VGE = 15 V; RG = 100 W RBSOA reverse bias safe operating area VGE = 15 V; RG = 100 W; IC = 20 A; TVJ =125C VCEK < VCES-LS*dI /dt V ISC (SCSOA) short circuit safe operating area VCE = 720 V; VGE = 15 V; TVJ = 125C RG = 100 W; tp = 10 s; non-repetitive 40 A RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) TVJ =150C continuous transient inductive load VCE = 600 V; IC = 10 A VGE = 15 V; RG = 100 W TVJ = 25C TVJ =125C 5 0.8 TVJ = 25C TVJ =125C 600 pF 54 nC 55 30 320 200 0.9 0.75 ns ns ns ns mJ mJ 60 35 360 340 1.55 1.1 ns ns ns ns mJ mJ 1.9 K/W K/W max. Unit 0.65 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. VRRM max. repetitve reverse voltage TVJ =150C 1200 V IF25 IF80 forward current TC = 25C TC = 80C 24 16 A A VF forward voltage IF = 10 A; VGE = 0 V 2.4 V V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -300 A/s IF = 10 A; VGE = 0 V RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink TVJ = 25C TVJ =125C 2.0 1.6 TVJ =125C 1.9 12.8 335 0.54 (per diode) C A ns mJ 1.6 0.55 K/W K/W TC = 25C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved 20070611 -8 Advanced Technical Information MITA10WB1200TMH Brake T7 Ratings Symbol Definitions Conditions min. typ. max. Unit VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage 1200 V 20 30 V V IC25 IC80 collector current TC = 25C TC = 80C 17 12 A A Ptot total power dissipation TC = 25C 70 W VCE(sat) collector emitter saturation voltage IC = 10 A; VGE = 15 V 1.9 2.3 2.2 V V VGE(th) gate emitter threshold voltage IC = 0.3 A; VGE = VCE TVJ = 25C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ =125C 5.5 6.5 V 0.6 mA mA IGES gate emitter leakage current VGE = 20 V Cies input capacitance 150 nA VCE = 25 V; VGE = 0 V; f = 1 MHz QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 10 A td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 10 A VGE = 15 V; RG = 100 W RBSOA reverse bias safe operating area VGE = 15 V; RG = 100 W; IC = 20 A; TVJ =125C VCEK < VCES-LS*dI /dt V ISC (SCSOA) short circuit safe operating area VCE = 720 V; VGE = 15 V; TVJ = 125C RG = 100 W; tp = 10 s; non-repetitive 40 A RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) TVJ =150C continuous transient inductive load VCE = 600 V; IC = 10 A VGE = 15 V; RG = 100 W TVJ = 25C TVJ =125C 5 0.8 TVJ = 25C TVJ =125C 600 pF 54 nC 55 30 320 200 0.9 0.75 ns ns ns ns mJ mJ 60 35 360 340 1.55 1.1 ns ns ns ns mJ mJ 1.9 0.65 K/W K/W Brake Chopper D7 Ratings typ. max. Unit TVJ =150C 1200 V TC = 25C TC = 80C 15 10 A A 3.1 V V 0.1 0.2 mA mA tbd tbd tbd tbd C A ns J Symbol Definitions Conditions VRRM max. repetitive reverse voltage IF25 IF80 forward current VF forward voltage IF = 10 A; VGE = 0 V TVJ = 25C TVJ =125C 2.5 2.0 IR reverse current VR = VRRM TVJ = 25C TVJ =125C Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink VR = 600 V diF /dt = tbd A/s IF = 10 A; VGE = 0 V TVJ =125C (per diode) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved min. 2.5 0.85 K/W K/W TC = 25C unless otherwise stated 20070611 -8 Advanced Technical Information MITA10WB1200TMH Input Rectifier Bridge D8 - D11 Ratings typ. max. Unit TVJ = 25C 1600 V TC = 80C TC = 80C 22 61 A A t = 10 ms; sine 50 Hz TVJ = 25C TVJ =125C 300 tbd A A t = 10 ms; sine 50 Hz TVJ = 25C TVJ =125C 450 tbd A2s A2s Symbol Definitions Conditions min. VRRM max. repetitive reverse voltage IFAV IDAVM average forward current max. average DC output current sine 180 rect.; d = 1/3 IFSM max. forward surge current I2t I2t value for fusing Ptot total power dissipation VF forward voltage IF = 30 A TVJ = 25C TVJ =125C 1.35 1.35 IR reverse current VR = VRRM TVJ = 25C TVJ =125C 0.3 RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink TC = 25C (per diode) (per diode) 50 W 1.6 V V 0.01 mA mA 2.1 K/W K/W 0.7 Temperature Sensor NTC Symbol Definitions R25 B25/50 resistance Conditions min. TC = 25C 4.75 Ratings typ. max. 5.0 3375 5.25 Unit kW K Module Symbol Definitions TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index FC mounting force dS dA creep distance on surface strike distance through air Conditions min. Ratings typ. max. Unit 125 150 125 C C C 2500 V~ -40 -40 IISOL < 1 mA; 50/60 Hz 40 80 12.7 12 Weight N mm mm 35 g Equivalent Circuits for Simulation I V0 R0 Definitions Conditions V0 R0 rectifier diode D8 - D13 TVJ =125C 0.9 16 V mW V0 R0 IGBT T1 - T6 TVJ =125C 1.0 125 V mW V0 R0 free wheeling diode D1 - D6 TVJ =125C 1.15 45 V mW V0 R0 IGBT T7 TVJ =125C 1.0 125 V mW V0 R0 free wheeling diode D7 TVJ =125C 1.4 60 V mW IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved min. Ratings typ. max. Symbol TC = 25C unless otherwise stated Unit 20070611 -8 MITA10WB1200TMH Advanced Technical Information Circuit Diagram P P1 T1 D8 D10 D12 T3 D7 G1 NTC1 T5 D1 D5 D3 G3 G5 L1 L2 B L3 T6 T4 D2 NTC2 GB EU G6 EV Outline Drawing Dimensions in mm (1 mm = 0.0394") 48,26 44,45 35,56 31,75 27,94 26,37 2 0,5 8,5 0,35 A 20,5 0,50 EW 4 O4 7 0,35 D6 D4 G4 G2 NB N W V T2 T7 D9 D11 D13 U 55,9 40,6 2,2 ,2 A (2:) 0,635 P1 G1 U G3 V G5 W NB GB B EW G6 EV G4 EU P G2 NTC1 L1 O 0.4 L2 L3 N ,4 ,8 3,6 Pin positions with tolerance 17,78 10,16 8,89 6,35 2,54 31,75 22,86 19,05 45,6 39,6 23 26,6 24,13 20,32 16,51 8,89 2,4 25,6 2 NTC2 Product Marking Part number M I T A 10 WB 1200 T MH Ordering Part Name Marking on Product Standard MITA 10 WB 1200 TMH MITA10WB1200TMH IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved = Module = IGBT = Standard trench = Gen 1 / std = Current Rating [A] = 6-Pack + 3~ Rectifier Bridge & Brake Unit = Reverse Voltage [V] = NTC = MiniPack2 Delivering Mode Base Qty Ordering Code Box 20 502214 20070611 -8 MITA10WB1200TMH Advanced Technical Information 20 20 25 C 18 Vge= 19V 18 125 C Vge= 17V 16 14 14 12 12 Ic [A] Ic [A] Vge= 15V 16 10 Vge= 11V Vge= 9V 10 8 8 6 6 4 4 2 2 0 Vge= 13V 0 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 0.0 0.5 1.0 Vce [V] 2.0 2.5 3.0 3.5 4.0 Vce [V] Typical output characteristics, VGE = 15 V Typical output characteristics (125C) 20 20 25 C 18 25 C 18 125 C 16 16 14 14 12 12 If [A] Ic [A] 1.5 10 10 8 8 6 6 4 4 2 2 0 125 C 0 5 6 7 8 9 10 11 12 13 14 Vge [V] Typical transfer characteristics IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 Vf [V] Typical forward characteristics of freewheeling diode 20070611 -8 MITA10WB1200TMH Advanced Technical Information 18 Ic = 10A Vce = 600V 16 15 14 13 12 10 E [mJ] Vge [[V] 11 9 8 7 6 5 4 3 2 1 0 0 5 10 15 20 25 30 4.8 4.6 4.4 4.2 4 3.8 3.6 3.4 3.2 3 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 35 40 45 50 55 60 65 70 Eon Eoff Erec Vce = 600V Vge = +/-15V Rg = 100W Tvj = 125C 0 2 4 6 8 Typical turn on gate charge 13 Irr Eon 12.8 Eoff Erec 1.8 14 16 trr 22 100W Irr [A] 1.2 1 460 440 220W 12.2 420 150W 12 400 11.8 380 0.8 150W 11.6 0.6 0.2 20 480 12.4 1.4 0.4 18 500 If = 10A Vce = 600V Vge = +/-15V Tvj = 125C 12.6 1.6 E [mJ] 12 Typical switching energy versus collector current 2.2 2 10 Ic, If [A] Qg [nC] trr [ns] 17 11.4 Ic, If = 10A Vce = 600V Vge = +/-15V Tvj = 125C 0 100 120 360 100W 220W 11.2 140 160 180 200 220 Rg [W ] Typical switching energy versus gate resistance IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved 11 200 220 340 320 240 260 280 300 300 320 dif/dt [A/s] Typical turn-off characteristics of free wheeling diode 20070611 -8 MITA10WB1200TMH Advanced Technical Information 3 20 Vce = 600V Vge = +/-15V Rg = 100W Tvj = 125C 2.8 2.6 2.4 25 C 18 16 2.2 14 2 1.8 12 1.6 If [A] Qrr [C] 125 C 1.4 10 8 1.2 1 6 0.8 4 0.6 0.4 2 0.2 0 0 0 2 4 6 8 10 12 14 16 18 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 22 If [A] Vf [V] Typical turn-off characteristics of free wheeling diode 60 Typical forward characteristics of brake diode 100000 25 C 55 125 C 50 45 40 10000 Rnom [ W ] If [A] 35 30 25 20 1000 15 10 5 0 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Vf [V] Typical forward characteristics per rectifier IXYS reserves the right to change limits, test conditions and dimensions. (c) 2007 IXYS All rights reserved 0 25 50 75 100 125 150 T [C] Typical thermistor resistance versus temperature 20070611 -8