2N3476~2N3581 Numerical Index gle MAXIMUM RATINGS ELECTRICAL CHARACTERISTICS = ory = = = &| ce | REPLACE- | PAGE Po JE] Ts | Vee | Woe | = fre @ Ic Veesan @ Ic e| ft. le WE 1215 | ment | numper| USE & 5 2 Sg) |B] Tel =a @ 25C | S| C | (volts) | (volts) | = | (min) (max) 3S} (volts) 3 3 5|3 2N3476 S| N LPA 150W{ Cf 150} 150 150 O} 700) LOK 4.0A 3.5 9.0A1 100 E 4.0K] E 2N3477 S| N LPA 150W] C| 150] 200 200 O| 700) 1OK 4.0A 3.5 9.0A|{ 100 E 4.0K] E 2N3478 Ss} N RFA O.2W} A} 200 30 45 0 25) 150 2,0M 25 E 750M] T 2N3479 thru Unijunction Transistors, see Table on Page 1-174 2N3484 2N3485 | S| P 8-169 | HSS| 2.0W|] C] 200|/ 60 40 | O} 40] 120) 0.15A 0.4} O.15A 200M| T 2N3485A| S| P 8-169 ASS 2.0W!) GC} 200 60 60 0 40) 120) 0.154 0.4) 0.154 200M) T 2N3486 | S} P 8-169 | HSS} 2.0W] C}] 200} 60 40 | Q} 100] 300] 0.15A 0.4] 0,15A 200M; T 2N3486A| S| P 8-169 | HSS} 2.0W] C|] 200] 60 60 | O| 100; 300} 0.15A 0.47 0.154 200M; T 2N3487 S| N 7-169 LPA 115W] C] 200 80 60 0 20 60 3.0A 0.3 1.0A 20 E 10M} T 2N3488 | S| N 7-169 | LPA] 115w] C] 200] 100 80 | O} 20} 60} 3.0A 0.3) 1.0A] 20 | E 10M} T 2N3489 S| N 7-169 LPA 115W} C| 200; 120 100 0 15 45 3.0A 0.3 1.0A 20 E 10M] T 2N3490 S| N 7-169 LPA 115W} C{ 200 80 60 a 40] 120 5.0A 0.3 1.0A 40 E 10M] T 2N3491 | S| N 7-169 | LPA| 1L15W] C] 200} 100 80 | OF 40} 120] 5.0A 0.3] 1.0A} 40 | E 10M] T 2N3492 S| N 7-169 LPA 115W] C} 200] 120 100 0 30 90 5.0A 0.3 1.0A 40 E 10M] T 2N3493 8| N 8-228 HSS| 0.15W} AJ] 200 12 8.0 0 40] 120 0.5M 0.15 10* 400M; T 2N3494 | S| P 8-230 ) VID} 06.6W}) A} 200) 80 80 | OF 35 0.14 0.3 1OM} 40 ] E}] 200M] T 2N3495 | S] P 8-230 | VID} 0.6W] A] 200) 120 | 120 | O| 35 O.1M] 0.35 10M} 40 | EJ} 150M; T 2N3496 | S| P 8-230 | VID}; O.4wW] A} 200] 80 80 | Oo} 35 0.1A 0.3 1oM{ 40 ; E|} 200M] T 2N3497 | S| P 8-230 | VID} O.4w{ A} 200] 120 | 120 | Of 35 O.1M] 0.35 10M; 40 | E|] 150M} T 2N3498 S| N 8-232 VID 1.0w] A] 200] 100 100 Q 40} 120] 0.15A 0.2 LOM 50 E 150M] T 2N3499 { S| N 8-232 | VID} L.0w! Al 200) 106 | 100 | GO} 100] 300) 0.154 0.2 LOM) 75 ) E} 150M) T 2N3500 S|_N 8-232 VID 1.0W] A} 200} 150 150 0 40{ 120] 0.15A 0.2 10M 50 E 150M] T 2N3501 | S| N 8-232 | VID} 1.0W}] A} 200] 150 | 150 | O| 100] 300] 0.15A 0.2 LOM] 75 | Ef 150M] T 2N3502 | S| Pj 2N2905 | 8-169 | HSS| 0.7W] A] 200) 45 45 | O|] 115] 300 50M} 0.25 50M} 135 ] E| 200M} T 2N3503 | S| P| 2N2905A| 8-169 | HSS} 0.7W{ A] 200] 60 60 | O}] 115] 300 50M} 0.25 50M] 135 } E|] 200M] T 2N3504 S} Pj} 2N2907 8-169 HSS O.4W} A} 200 45 45 ) 115) 300 50M 0.25 50M} 135 E Z00M| T 2N3505 S| P|] 2N2907A| 8-169 HSs 0.4wW| A} 200 60 60 O; 115] 300 50M 0.25 50M] 135 E 200M| T 2N3506 S| N 8-238 HSS 1.0w] A] 200 60 40 0 40] 200 1.5A 1.0 1.5A 60M] T 2N3507 5S] N 8-238 HSs 1.0Ww] AJ] 200 80 50 0 30} 150 1.5A 1.0 1.5A 60M] T 2N3508 Ss; N 8-240 HSS 0.4w] A} 200 40 20 0 40] 120 10M 0,25 10M 500M| T 2N3509 S| N 8-240 HSS 0.4W1 Al 200 40 20 QO}; 100!) 300 10M 0.25 10M SOOM} T 2N3510 S|] N 8-243 HSS| 0.36W] A] 200 40 10 25] 150] 0.15A 0.25 10M 20 E 350M| T 2N3511 SEN 8-243 HSS; 0.36W] Ay 200 40 15 oO 30{ 120] 0.154 0.25 10M 20 E 450M| T 2N3512 S| N] 2N2537 8-151 HSs 0.8W| A} 200 60 35 a 10 . 1.0 0.5A 250M| T 2N3513 S| N] 2N2480A| 11-6 DFA| 0.25W] A} 200 80 40 Qa 50] 200 1.2 50M 50 E 50M} T 2N3514 S|) N DFA] 0.25W) Ay 175 80 40 0 50) 260 1.2 50M 50 E 50M| T 2N3515 S|] N 11-39 DFA] 0.25w] A| L75 80 40 0 50} 200 1.2 50M 50 E 50M! T 2N3516 S| N DFA{ 0.25Wi A| 200] 100 60 0 50! 200 1.2 50M 50 E 60M| T 2N3517 S| N DFA] 0.25W] A} 175] 100 60 50| 200 1,2 50M 50 E 60M] T 2N3518 S| N 11-39 DFA| 0.25W] A] 175] 100 60 oO 50] 200 1.2 50M 50 E 60M| T 2N3519 S| N DFA) Q.25W) A} 175 60 30 QO} 150) 600 1.0 5.0M] 150 Ez 60M) T 2N3520 | S| N DFA] 0.25W] A| 175] 60 30 | Of 150] 600 1.0]; 5.0M] 150 | E 60M] T 2N3521 S| N DFA 0.3W| A} 200 70 55 O} 100] 300 1.0 10M 30M| T 2N3522 S} ON DFA} 0.25W} A} 200 70 55 QO} 100; 300 1.0 10M 30M| T 2N3523 S| N DFA] 0.25Wy} A} 175 70 53 O} 100; 300 1.0 10M 30M} T 2N3524 S| N DFA| 0.25W] Al 175 70 55 QO! L100} 300 1.0 LOM 30M) T 2N3525 Thyristor, see Table on Page 1-154 2N3526 | S{ N VID} O.8wl| A} 200] 130 } 120 | O} 30] 120 30M 1.0 5OM| 25 | E 40M] T 2N3527 S} P AFA O.4wj A] 200 30 30 0 25 75 0.1N 0.1N] 100 E 5.0M| T 2N3528 thru Thyristors, see Table on Page 1-154 2N3541 2N3543 s{ N HPA 6ow|] Cc] 200 65 60 0 10 80 4.5A 1.0 4.5A L50M| T 2N3544 S| N 9-78 RFC O.3W} A] 175 25 25 Ss 25 10M 600M] T 2N3545 | S} P HSS] 0.36W] A] 200] 20 20 | O] 40) 120 10M 0.2 10M 250M| T 2N3546 S| P 8-246 HSS; 0.36W| Al 200 15 12 0 30; 120 10M 0.15 10M 7OOM) T 2N3547 | S| P LNA] 0.36W] A] 200| 60 60 | O}| 100] 500) 1.0m 1.0 10M/ 120 | E 45M] T 2N3548 | S| P LNA| 0.4W] A] 200] 60 45 1 O| 100] 300 10* 1.0 10M} 150 |] E 60M) T 2N3549 | S| P LNA} 0.4W;] Aj] 200] 60 60 | O| 100) 500 10* 1.0 10M] 150 | E 60M] T 2N3550 S| P LNA O.4w} A} 200 60 45 Oy; 200] 600 10* 0.9 5,0M} 300 E 60M| T 2N3551 Ss) N PHS 40w) Cy} 175] 115 60 o 20 90 210A 1.0 10A 40M| T 2N3552 8S] N PHS 40w] C| 175] 140 80 0 20 90 10A 1,0 LOA 40M| T 2N3553 S| N 6-69 HPA 7.0W}] C}] 200 65 40 10] 100] 0.254 1.0] 0,254 400M] T 2N3554 S| N Hss 0.8Ww; A} 200 60 30 0 25] 100} 0.75A O.7{ 0.754 150M] T 2N3555 thru 2N3562 2N3563 S| N RFA O.2W{ A] 125 30 12 0 20| 200 8.0M 20 E 600M] T 2N3564 | S| N RFA] 0.2W} Aj 125} 30 15 | 0; 20} 500 15M 0.3 20M] 20 | E{ 400M] T 2N3565 S| N} MPS6514| 5-109 AFA 0.2W] Af 125 30 25 OF 150] 600 1.0M 120 E 40M) T 2n3566 | s| N} mesesia] 5-109 | ara} o.3w] A] 125{ 40 } 30 | of 150] ooo) lom] i.o} Ov ta 40m] T 2N3567 | S| N| MPS6530] 5-118 | AFA] O.3w| A] 125] 80 | 40 | O} 40} 120] 0.15A] 0.25) 0.15A 60M] T 2N3568 Sj N AFA O.3w}] A} 125 80 60 Oo 40] 120] 0.154 0.25] O.15A 60M, T 2N3569 S|} N} MPS6531} 5-118 AFA O.3W} Ay 125 80 40 Of 100] 300] 0.15A 0.25} O,15A 60M| T 2N3570 S| N RFA 0.2W}] A] 200 30 15 0 20} 150 5.0M 20 E 1.5G] T 2N3571 S| N RFA O.2w} A} 200 25 15 0 20{ 200 5.0M 20 E 1.5) T 2N3572 S| N RFA O.2w] A} 200 25 13 0 20| 300 5.0M 20 E 1.0G] T 2N3573 thru 2N3575 2N3576 Ss; P HSS| 0.36wW| A[ 200 20 15 Oo 40| 120 10M 0.15 LOM 400m| T 2N3577 S|] N HPA 85w] C] 175] 100 80 oO 12 60 1.0A 5.25 1,0A 12 E 10M] T 2N3578 2N3579 P VID] O.4W|] Aj 200; 60 60 | O| 30) 120); 1.0m 0.5) 5.0M/ 30] E 80M) T 2N3580 | S| P VID] O.4w] A} 200] 60 60 | O} 60; 240/ 1.0M 0.5) 5.0M} 60] E 80M] T 2N3581 S| P VID 0.4W} A} 200 50 40 0 50} 150 0.1M 0.5 5.0M 50 E 30M| T 1-140KX KX AANAR WN AN .MW\MWQ Q QA MAG ~ ANNALARA WS AAS WN WS WK QQ SS SX NS ANANAN WG WAAR! IQui'_'w y K\WYW MN NS SS ~ NS LL WH WL WS NS WAAAN WS Switching and General Purpose Transistors QUICK SELECTOR GUIDES SILICON HIGH-SPEED SWITCHING AND GENERAL PURPOSE TRANSISTORS The following two tables categorize the silicon devices included in this section into two classifications those intended for general-purpose switching and amplifier applications, and those recommended primarily for high-speed saturated switching purposes. Only the preferred devices those that merit first consideration for new designs are listed. In each table, the devices are grouped in voltage and current ranges. The voltage given is the minimum collector-emitter breakdown voltage (BVc RO): The current range columns represent operating current values for which optimum current gain (hpp) and/or collector-emitter satura- tion voltage (VoR(sat)) are specified in the data sheets. SATURATED SWITCHING TRANSISTORS (SILICON) Current versus Voltage OPTIMUM COLLECTOR CURRENT BVcro Oto 10mA 10 mA to 100 mA 100 mA to 500 mA 500 mA to 1.08 LOAtO3.0A 3.0A to 5.0A Min Volts NPN PNP NPN. PNP NPN PNP NPN PNP NPN PNP NPN PNP o 2N3010 2N2894 2N2369A| 2N2894 2N3009 2N3303 2N3303 2N3493 | 2N3546 2N3009 | 2N3546 2N3013 MM709 | 2N4411 2N3010 2N3510 MM1748 2N3011 2N3511 2N3013 2N3647 2N3210 2N3648 19 2N3211 20 2N702 2N2501 2N24%6 2N703 2N3014 2N2477 | 2N3227 2N2501 2N3508 2N2847 29 2N3509 2N2848 30 2N2537 2N2537 2N3252 2N3734 2N2538 2N2538 2N3724 2N3736 2N2539 2N2539 2N3734 2N2540 2N2540 2N3736 2N2845 2N4013 2N2846 2N4046 2N3015 2N3724 2N4013 39 2N4046 40 2N3725 2N3725 | 2N3467 2N3253 | 2N3467 2N3444 | 2N3762 2N3506 2N4014 2N4014 | 2N3468 2N3444 | 2N3468 2N3735 | 2N3764 2N3507 2N4047 2N3725 | 2N3762 2N3737 2N3735 | 2N3764 2N3737 2N4014 59 2N4047 60 2N3763 2N3763 79 2N3765 2N3765 Switching and General Purpose Transistors 2N3506, 2N3507 (continued) Ty = 125C Ty = 25C Ty =55C hee. OC CURRENT GAIN 02 02 03 05 10 ic, COLLECTOR CURRENT (Adc) CURRENT GAIN CHARACTERISTICS 2N3506 Vee=1V mem Ve E2Y 20 hee. OC CURRENT GAIN 200 Ty = 125 _ 100 50 20 01 02 03 2N3507 $ Vee SV a EDV \ 05 10 20 30 Ye. COLLECTOR CURRENT (Adc) 2N3.508 (siticon) 2n3509 current switching applications. CASE 26 Collector connected to case (TO-46) MAXIMUM RATINGS Veto = 20 V Ic = 500 mA fr = 500 MHz NPN silicon annular transistor for high-speed, low- Rating Symbol Value Unit Collector-Base Voltage Ves 40 Vdc Collector-Emitter Voltage Vers 40 Vde Collector-Emitter Voltage Vo EO 20 Vdc Emitter-Base Voltage VeB 6.0 Vade Collector Current (10 us pulse) Ic (Peak) 500 mA Total Device Dissipation Pp @ 25C Ambient Temperature 0.40 Watt Derating Factor Above 25C 2.29 mWw/C Total Device Dissipation Pp @ 25C Case Temperature 2.0 Watts Derating Factor Above 25C 11.43 mw/C Junction Temperature, Operating Ty +200 % Storage Temperature Range Totg -65 to +200 C Thermal Resistance 90 0. 438 C/mw 93a 0. 0875 C/mw 8-240 Switching and General Purpose Transistors 2N3508, 2N3509 (continued) ELECTRICAL CHARACTERISTICS (at 25C unless otherwise specified) Characteristic Symbol } Min Max Unit Collector Cutoff Current Icno U Adc (Vcp = 20 Vdc) Both Types 0.2 (Vop = 20 Vde, Ta = 150C) 2N3508 30 2N3509 _ 50 Collector Cutoff Current ICEx yAdc (Vog = 20 Vde, Vepiott) = 3 Vde) _ 0.2 Base Cutoff Current IBL uAdc Veg = 20 Vdc, Vroiot) = 3 Vde) _ 0.5 Collector-Base Breakdown Voltage BYcRo Vde (Ig = 10 wAde, Ip = 0) 40 _ Emitter-Base Breakdown Voltage BVgeRo Vde (Ig = 10 wAde, Ic = 0) 6.0 Collector-Emitter Breakdown Voitage* BVcEO* Yde (i, = 10 mAdc) 20 _ Collector- Emitter Voltage BVcEs Vde Ug = 10 pAde, ly = 0) 40 _ Collector-Emitter Saturation Voltage* VoE(sat) * Vde (Ig = 10 mAdc, Ip = 1 mAdc) _ 0.25 (Ig = 100 mAdc, Ip = 10 mAdc) _ 0.45 Base-Emitter Saturation Voltage* VBE(eat)" Vde (Ic = 10 mAdc, Ip = 1 mAdc) 0.70 0.85 (Ig = 100 mAdc, Ip = 10 maAdc) 0.8 1.4 De Current Gain* hpg* _ (Ig = 10 mAdc, Vog = 1.0 Vde) 2N3508 40 120 2N3509 100 300 (Ile = 10 mAdc, V., = 1.0 Vde, T, = +55C) 2N3508 20 c CE 4 2N3509 40 _ (Ic = 100 mAdc, Veg = 1.0 Vdc) 2N3508 20 _ c ce 2N3509 30 ~ Small-Signal Current Gain hee (Ig = 10 mAdc, Vog = 10 Vdc, ft =100 MHz} 5 _ Output Capacitance Cc ob pF Vop = 5 Vde, Ip = 0,f = 140 kHz) _ 4 Input Capacitance Cy pF (VBE = 1 Vdc, I, = 0, f= 140 kHz) _ 4 Storage Time tg(T,) ns (Ig = Ig, = Ipg = 10 mA) 13 Turn-On Time ton ns (lc = 10 mA, Ip; = 3 mA, Voc = 3 VY, Vop = 1.5 Vv) _ 12 Turn-Off Time tort ns (Ig = 10 mA, Ip = 3mA, Tp2 = 15 mA, Voc = 3 v) _ 18 Total Control Charge Qr pc (Ic = 10 mA, Ip = 1 mA, Voc = 3 V) _~ 50 Delay Time ty _ 5 ns Voc = 10 V, Vpp=2V, Ig = 100 mA, I, = 10mA Rise Time t _ 18 ns Storage Time ty 13 ns Voc = 10V Io = 100 mA, Ip; = Igo = 10 mA Fall Time te - 15 ne *Pulse Test: PW = 300us, Duty Cycle < 2% 8-241 Switching and General Purpose Transistors 2N3508, 2N3509 (continued) tre, MINIMUM CURRENT GAIN hee, MINIMUM CURRENT GAIN SWITCHING TIMES (ns) MINIMUM CURRENT GAIN CHARACTERISTICS T= 129C Ty = 75C T, = 25C 2N3508 Vee = 1V Ty = 25C & 75C 2 3 5 7 10 20 30 50 ic, COLLECTOR CURRENT {mA} Ty == 126C T= 75C 70 100 2N3509 Veg = 1V T, = 25C & 75C 2 3 7 10 20 30 50 ic, COLLECTOR CURRENT (mA) TYPICAL SWITCHING TIMES LIMITS OF SATURATION VOLTAGE Be t, Vee = 3 ) V juan, SATURATION VOLTAGE VOLTS 2 3 5 7 WW 20 30 50 70 100 y 2 3 7 10 20 Ic, COLLECTOR CURRENT (mA) Ic, COLLECTOR CURRENT (mA) 8-242 30 70 100 50 70 100