QFET FQD2N60C/FQU2N60C (R) 600V N-Channel MOSFET Features Description * 1.9A, 600V, RDS(on) = 4.7 @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. * Low gate charge (typical 8.5 nC) * Low Crss (typical 4.3 pF) This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology. * Fast switching * 100% avalanche tested * Improved dv/dt capability * RoHS Compliant D ! D G S G! I-PAK D-PAK G D S FQD Series FQU Series FQD2N60C/FQU2N60C 600V N-Channel MOSFET January 2009 ! S Absolute Maximum Ratings Symbol Parameter FQD2N60C / FQU2N60C Units 600 V - Continuous (TC = 25C) 1.9 A - Continuous (TC = 100C) 1.14 A VDSS Drain-Source Voltage ID Drain Current IDM Drain Current - Pulsed (Note 1) 7.6 A 30 V VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) 120 mJ IAR Avalanche Current (Note 1) 1.9 A EAR Repetitive Avalanche Energy (Note 1) 4.4 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 4.5 V/ns PD Power Dissipation (TA = 25C)* 2.5 W Power Dissipation (TC = 25C) 44 W 0.35 W/C -55 to +150 C 300 C - Derate above 25C TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Typ Max Units RJC Symbol Thermal Resistance, Junction-to-Case Parameter -- 2.87 C/W RJA Thermal Resistance, Junction-to-Ambient* -- 50 C/W RJA Thermal Resistance, Junction-to-Ambient -- 110 C/W * When mounted on the minimum pad size recommended (PCB Mount) (c)2009 Fairchild Semiconductor Corporation FQD2N60C/FQU2N60C Rev. B3 1 www.fairchildsemi.com Device Marking Device Package Reel Size Tape Width FQD2N60C FQD2N60C D-PAK - - FDU2N60C FDU2N60C I-PAK - - Electrical Characteristics Symbol Quantity TC = 25C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 A 600 -- -- V BVDSS/ TJ Breakdown Voltage Temperature Coefficient ID = 250 A, Referenced to 25C -- 0.6 -- V/C IDSS Zero Gate Voltage Drain Current VDS = 600 V, VGS = 0 V -- -- 1 A VDS = 480 V, TC = 125C -- -- 10 A IGSSF Gate-Body Leakage Current, Forward VGS = 30 V, VDS = 0 V -- -- 100 nA IGSSR Gate-Body Leakage Current, Reverse VGS = -30 V, VDS = 0 V -- -- -100 nA On Characteristics VGS(th) Gate Threshold Voltage VDS = VGS, ID = 250 A 2.0 -- 4.0 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 0.95 A -- 3.6 4.7 gFS Forward Transconductance VDS = 40 V, ID = 0.95 A -- 5.0 -- S -- 180 235 pF (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz -- 20 25 pF -- 4.3 5.6 pF -- 9 28 ns -- 25 60 ns -- 24 58 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 300 V, ID = 2 A, RG = 25 (Note 4, 5) VDS = 480 V, ID = 2 A, VGS = 10 V (Note 4, 5) -- 28 66 ns -- 8.5 12 nC -- 1.3 -- nC -- 4.1 -- nC -- -- 1.9 A Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- 7.6 A VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = 1.9 A -- -- 1.4 V trr Reverse Recovery Time 230 -- ns Reverse Recovery Charge VGS = 0 V, IS = 2 A, dIF / dt = 100 A/s -- Qrr -- 1.0 -- C (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 56mH, IAS = 2A, VDD = 50V, RG = 25 , Starting TJ = 25C 3. ISD 2A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temperature FQD2N60C/FQU2N60C Rev. B3 2 www.fairchildsemi.com FQD2N60C/FQU2N60C 600V N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 1 10 VGS 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 5.0 V Bottom : 4.5 V 0 10 ID, Drain Current [A] ID, Drain Current [A] Top : -1 10 o 150 C o -55 C 0 10 o 25 C Notes : 1. 250 s Pulse Test 2. TC = 25 Notes : 1. VDS = 40V 2. 250 s Pulse Test -1 -2 10 -1 0 10 10 1 10 2 10 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperatue 10 IDR, Reverse Drain Current [A] RDS(ON) [ ], Drain-Source On-Resistance 12 VGS = 10V 8 6 4 VGS = 20V 2 0 10 150 Notes : 1. VGS = 0V 2. 250 s Pulse Test 25 Note : TJ = 25 0 -1 10 0 1 2 3 4 5 0.2 0.4 Figure 5. Capacitance Characteristics 500 VGS, Gate-Source Voltage [V] Capacitance [pF] Ciss 300 Coss 200 Notes ; 1. VGS = 0 V 2. f = 1 MHz 150 Crss 100 1.4 VDS = 300V 8 VDS = 480V 6 4 2 50 0 -1 10 1.2 VDS = 120V 10 250 1.0 12 400 350 0.8 Figure 6. Gate Charge Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 450 0.6 VSD, Source-Drain voltage [V] ID, Drain Current [A] Note : ID = 2A 0 10 0 1 10 FQD2N60C/FQU2N60C Rev. B3 0 2 4 6 8 10 QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V] 3 www.fairchildsemi.com FQD2N60C/FQU2N60C 600V N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 3.0 RDS(ON), (Normalized) Drain-Source On-Resistance BVDSS, (Normalized) Drain-Source Breakdown Voltage 1.2 1.1 1.0 Notes : 1. VGS = 0 V 2. ID = 250 A 0.9 0.8 -100 -50 0 50 100 150 2.5 2.0 1.5 1.0 Notes : 1. VGS = 10 V 2. ID = 0.95 A 0.5 0.0 -100 200 -50 0 o TJ, Junction Temperature [ C] 50 100 150 200 o TJ, Junction Temperature [ C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 2.0 Operation in This Area is Limited by R DS(on) 1 10 1.6 ID, Drain Current [A] ID, Drain Current [A] 100 s 1 ms 0 10 10 ms 100 ms DC -1 10 Notes : o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse 0 10 1 2 10 0.8 0.4 -2 10 1.2 0.0 25 3 10 10 50 75 VDS, Drain-Source Voltage [V] Z JC(t), Thermal Response Figure 11. Typical Drain Current Slope vs. Gate Resistance 125 150 Figure 12. Typical Drain-Source Voltage Slope vs. Gate Resistance D = 0 .5 10 100 TC, Case Temperature [] N o te s : 1 . Z J C ( t) = 2 .8 7 /W M a x . 2 . D u ty F a c to r, D = t 1 /t 2 3 . T J M - T C = P D M * Z J C (t) 0 0 .2 0 .1 0 .0 5 10 PDM 0 .0 2 0 .0 1 -1 t1 s in g le p u ls e 10 -5 10 -4 10 -3 10 -2 10 -1 t2 10 0 10 1 t 1 , S q u a re W a v e P u ls e D u ra tio n [s e c ] FQD2N60C/FQU2N60C Rev. B3 4 www.fairchildsemi.com FQD2N60C/FQU2N60C 600V N-Channel MOSFET Typical Performance Characteristics (Continued) FQD2N60C/FQU2N60C 600V N-Channel MOSFET Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50K 200nF 12V Qg 10V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RG RL VDS 90% VDD VGS VGS DUT 10V 10% td(on) tr td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD tp FQD2N60C/FQU2N60C Rev. B3 VDS (t) VDD DUT 10V ID (t) tp 5 Time www.fairchildsemi.com FQD2N60C/FQU2N60C 600V N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD * dv/dt controlled by RG * ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop FQD2N60C/FQU2N60C Rev. B3 6 www.fairchildsemi.com FQD2N60C/FQU2N60C 600V N-Channel MOSFET Mechanical Dimensions TO-252 (DPAK) (FS PKG Code 36) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 FQD2N60C/FQU2N60C Rev. B3 7 www.fairchildsemi.com FQD2N60C/FQU2N60C 600V N-Channel MOSFET Mechanical Dimensions I - PAK Dimensions in Millimeters FQD2N60C/FQU2N60C Rev. 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