© 2004 IXYS All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 150°C 1200 V
VDGR TJ= 25°C to 150°C; RGS = 1 MΩ1200 V
VGS Continuous ±30 V
VGSM Transient ±40 V
ID25 TC= 25°C12A
IDM TC= 25°C, pulse width limited by TJM 48 A
IAR 12 A
EAR TC= 25°C30mJ
EAS TC= 25°C 1.0 J
PDTC= 25°C 500 W
TJ-55 ... +150 °C
TJM 150 °C
Tstg -55 ... +150 °C
MdMounting torque 1.13/10 Nm/lb.in.
Weight 6g
Maximum lead temperature for soldering 300 °C
1.6 mm (0.062 in.) from case for 10 s
TO-247 AD
Power MOSFET, Avalanche Rated
High Voltage
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VDSS VGS = 0 V, ID = 1 mA 1200 V
VGS(th) VDS = VGS, ID = 250 µA35V
IGSS VGS = ±30 VDC, VDS = 0 ±100 nA
IDSS VDS = VDSS TJ = 25°C25µA
VGS = 0 V TJ = 125°C3mA
RDS(on) VGS = 10 V, ID = 0.5 • ID25 1.4 Ω
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
G = Gate, D = Drain,
S = Source, TAB = Drain
Features
zInternational standard package
JEDEC TO-247 AD
zLow RDS (on) HDMOSTM process
zRugged polysilicon gate cell structure
zFast switching times
Applications
zSwitch-mode and resonant-mode
power supplies
zMotor controls
zUninterruptible Power Supplies (UPS)
zDC choppers
Advantages
zEasy to mount with 1 screw
(isolated mounting screw hole)
zSpace savings
zHigh power density
D (TAB)
DS98937E(04/04)
IXTH 12N120 VDSS =1200 V
ID (cont) = 12 A
RDS(on)= 1.4 Ω Ω
Ω Ω
Ω
Preliminary Data Sheet
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
Symbol Test Conditions Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
gfs VDS = 20 V; ID = 0.5 ID25, pulse test 6 10 S
Ciss 3400 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 280 pF
Crss 105 pF
td(on) 24 ns
trVGS = 10 V, VDS = 0.5 • VDSS, 0.5 ID25 25 ns
td(off) RG = 1.5 Ω (External) 35 ns
tf17 ns
Qg(on) 95 nC
Qgs VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 ID25 22 nC
Qgd 50 nC
RthJC 0.25 K/W
RthCK 0.25 K/W
Source-Drain Diode Characteristic Values
(TJ = 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
ISVGS = 0 V 12 A
ISM Repetitive; pulse width limited by TJM 48 A
VSD IF = IS, VGS = 0 V, 1.5 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
trr IF = IS, -di/dt = 100 A/µs, VR = 100 V 850 ns
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A12.2 2.54 .087 .102
A22.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b11.65 2.13 .065 .084
b22.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 AD Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
IXTH 12N120
IXYS MOSFETs and IGBTs are covered by one or more 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025 6,404,065B1 6,162,665 6,534,343 6,583,505
of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1 6,259,123B1 6,306,728B1 6,683,344
http://store.iiic.cc/
© 2004 IXYS All rights reserved
Fig. 2. Extended Output Characteristics
@ 25
º
C
0
2
4
6
8
10
12
14
16
18
20
0 3 6 9 12 15 18 21 24 27 30
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
6V
6.5V
6.5V
Fig. 3. Output Characteristics
@ 125
º
C
0
1
2
3
4
5
6
7
8
9
10
11
12
0 4 8 1216202428323640
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7V
5V
5.5V
6.5V
6V
Fig. 1. Output Characteristics
@ 25
º
C
0
1
2
3
4
5
6
7
8
9
10
11
12
024681012141618
V
D S
- Volts
I
D
- Amperes
V
GS
= 10V
8V
7.5V
7V
6V
6.5V
Fig. 4. R
DS(on
)
Normalized to 0.5 I
D25
Value vs. Junction Temperature
0.4
0.7
1
1.3
1.6
1.9
2.2
2.5
2.8
3.1
-50 -25 0 25 50 75 100 125 150
T
J
- Degrees Centigrade
R
D S ( o n )
- Normalize
d
I
D
= 12A
I
D
= 6A
V
GS
= 10V
Fig. 6. Drain Curre nt vs. Cas e
Temperature
0
2
4
6
8
10
12
14
-50 -25 0 25 50 75 100 125 150
T
C
- Degrees Centigrade
I
D
- Amperes
Fig. 5. R
DS(on)
Normalized to
0.5 I
D25
Value vs. I
D
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
0 2 4 6 8 101214161820
I
D
- Amperes
R
D S ( o n )
- Normalize
d
T
J
= 125ºC
T
J
= 25ºC
V
GS
= 10V
IXTH 12N120
http://store.iiic.cc/
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTH 12N120
Fig. 11. Capacitance
10
100
1000
10000
0 5 10 15 20 25 30 35 40
V
D S
- Volts
Capacitance - picoFarads
Ciss
Coss
Crss
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 600V
I
D
= 6A
I
G
= 10mA
Fig. 7. Input Admittance
0
2
4
6
8
10
12
14
16
4.555.566.577.5
V
G S
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0
2
4
6
8
10
12
14
16
18
20
024681012141618
I
D
- Amperes
g
f s
- Siemens
T
J
= -40ºC
25ºC
125ºC
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
3
6
9
12
15
18
21
24
27
30
33
36
0.40.50.60.70.80.9 1
V
S D
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 12. Maximum Transient Thermal
Resistance
0.01
0.10
1.00
1 10 100 1000
Pulse Width - milliseconds
R
( t h ) J C
-
º
C /
W
http://store.iiic.cc/
