© 2006 IXYS CORPORATION All rights reserved
Symbol Test Conditions Maximum Ratings
VDSS TJ= 25°C to 175°C55V
VDGR TJ= 25°C to 175°C; RGS = 1 MΩ55 V
VGSM Transient ± 20 V
ID25 TC= 25°C 182 A
ILRMS Lead Current Limit, RMS 75 A
IDM TC= 25°C, pulse width limited by TJM 490 A
IAR TC= 25°C25A
EAS TC= 25°C 1.0 J
dv/dt IS≤ I
DM, di/dt ≤ 100 A/µs, VDD ≤ V
DSS 3 V/ns
TJ≤ 175°C, RG = 5 Ω
PDTC= 25°C 360 W
TJ-55 ... +175 °C
TJM 175 °C
Tstg -55 ... +175 °C
TL1.6 mm (0.062 in.) from case for 10 s 300 °C
TSOLD Plastic body for 10 seconds 260 °C
MdMounting torque (TO-220) 1.13 / 10 Nm/lb.in.
Weight TO-263 2.5 g
TO-220 3.0 g
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
BVDSS VGS = 0 V, ID = 250 µA55V
VGS(th) VDS = VGS, ID = 250 µA 2.0 4.0 V
IGSS VGS = ± 20 V, VDS = 0 V ± 200 nA
IDSS VDS = VDSS 5µA
VGS = 0 V TJ = 150°C 250 µA
RDS(on) VGS = 10 V, ID = 25 A, Notes 1, 2 3.8 5.0 m Ω
TrenchMVTM
Power MOSFET
Preliminary Technical Information
N-Channel Enhancement Mode
Avalanche Rated
IXTA182N055T
IXTP182N055T
VDSS =55 V
ID25 = 182 A
RDS(on) ≤≤
≤≤
≤5.0 m ΩΩ
ΩΩ
Ω
DS99626 (11/06)
TO-263 (IXTA)
TO-220 (IXTP)
GS
GDS
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
(TAB)
Features
Ultra-low On Resistance
Unclamped Inductive Switching (UIS)
rated
Low package inductance
- easy to drive and to protect
175 °C Operating Temperature
Advantages
Easy to mount
Space savings
High power density
Applications
Automotive
- Motor Drives
- High Side Switch
- 12V Battery
- ABS Systems
DC/DC Converters and Off-line UPS
Primary- Side Switch
High Current Switching
Applications
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA182N055T
IXTP182N055T
Symbol Test Conditions Characteristic Values
(TJ = 25°C unless otherwise specified) Min. Typ. Max.
gfs VDS= 10 V; ID =60 A, Note 1 65 100 S
Ciss 4850 pF
Coss VGS = 0 V, VDS = 25 V, f = 1 MHz 954 pF
Crss 212 pF
td(on) Resistive Switching Times 36 ns
trVGS = 10 V, VDS = 30 V, ID = 25 A 35 ns
td(off) RG = 5 Ω (External) 53 ns
tf38 ns
Qg(on) 114 nC
Qgs VGS= 10 V, VDS = 0.5 VDSS, ID = 25 A 30 nC
Qgd 32 nC
RthJC 0.42°C/W
RthCS TO-220 0.50 °C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
TJ = 25°C unless otherwise specified) Min. Typ. Max.
ISVGS = 0 V 182 A
ISM Pulse width limited by TJM 490 A
VSD IF = 25 A, VGS = 0 V, Note 1 1.0 V
trr IF = 25 A, -di/dt = 100 A/µs70ns
VR = 25 V, VGS = 0 V
Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %;
2. On through-hole packages, RDS(on) Kelvin test contact
location must be 5 mm or less from the package body.
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
TO-263AA (IXTA) Outline
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
Pins: 1 - Gate 2 - Drain
3 - Source 4, TAB - Drain
TO-220AB (IXTP) Outline
IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2
one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6771478 B2 7,071,537
PRELIMINARY TECHNICAL INFORMATION
The product presented herein is under development. The Technical Specifications
offered are derived from data gathered during objective characterizations of preliminary
engineering lots; but also may yet contain some information supplied during a pre-
production design evaluation. IXYS reserves the right to change limits, test conditions,
and dimensions without notice.
© 2006 IXYS CORPORATION All rights reserved
IXTA182N055T
IXTP182N055T
Fig. 1. Output Characteristics
@ 25ºC
0
20
40
60
80
100
120
140
160
180
200
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
7V
5V
Fig. 2. Extended Output Characteristics
@ 25ºC
0
40
80
120
160
200
240
280
320
0123456
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
7V
5V
Fig. 3. Output Characteristics
@ 150ºC
0
20
40
60
80
100
120
140
160
180
200
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8
V
DS
- Volts
I
D
- Amperes
V
GS
= 10V
9V
8V
6V
5V
7V
Fig. 4. R
DS(on)
Normalized to I
D
= 91A Value
vs. Junction Temperature
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
-50 -25 0 25 50 75 100 125 150 175
T
J
- Degrees Centigrade
R
DS(on)
- Normalized
V
GS
= 10V
I
D
= 182A
I
D
= 91A
Fig. 5. R
DS(on)
Normalized to I
D
= 91A Value
vs. Drain Current
0.6
0.8
1
1.2
1.4
1.6
1.8
2
2.2
2.4
0 40 80 120 160 200 240 280 320
I
D
- Amperes
R
DS(on)
- Normalized
V
GS
= 10V
15V - - - - T
J
= 175ºC
T
J
= 25ºC
Fig. 6. Drain Current vs. Case Temperature
0
20
40
60
80
100
120
140
-50 -25 0 25 50 75 100 125 150 175
T
C
- Degrees Centigrade
I
D
- Amperes
External Lead Current Limit for TO-263 (7-Lead)
External Lead Current Limit for TO-3P, TO-220, & TO-263
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA182N055T
IXTP182N055T
Fig. 7. Input Admittance
0
30
60
90
120
150
180
210
240
270
3.5 4 4.5 5 5.5 6 6.5 7 7.5
V
GS
- Volts
I
D
- Amperes
T
J
= -40ºC
25ºC
125ºC
Fig. 8. Transconductance
0
20
40
60
80
100
120
140
0 30 60 90 120 150 180 210 240 270
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
25ºC
150ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
30
60
90
120
150
180
210
240
270
300
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
V
SD
- Volts
I
S
- Amperes
T
J
= 150ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 102030405060708090100110120
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 27.5V
I
D
= 25A
I
G
= 10mA
Fig. 11. Capacitance
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarad
s
f
= 1 MHz
Ciss
Crss
Coss
Fig. 12. Forward-Bias Safe Operating Area
10
100
1,000
1 10 100
V
DS
- Volts
I
D
- Amperes
T
J
= 175ºC
T
C
= 25ºC
25µs
1ms
100µs
R
DS(on)
Limit @ V
GS
= 10V
10ms
DC
© 2006 IXYS CORPORATION All rights reserved
IXTA182N055T
IXTP182N055T
Fig. 14. Resistive Turn-on
Rise Time vs. Drain Current
22
24
26
28
30
32
34
36
38
25 30 35 40 45 50
I
D
- Amperes
t
r
- Nanosecond
s
R
G
= 5Ω
V
GS
= 10V
V
DS
= 30V
T
J
= 125ºC
T
J
= 25ºC
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
20
40
60
80
100
120
140
160
4 6 8 101214161820
R
G
- Ohms
t r
- Nanoseconds
30
34
38
42
46
50
54
58
t
d ( o n )
- Nanoseconds
t
r
t
d(on)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 30V
I
D
= 50A
I
D
= 25A
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
34
36
38
40
42
44
46
48
50
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t f
- Nanosecond
s
50
53
56
59
62
65
68
71
74
t
d ( o f f )
- Nanosecond
s
t
f
t
d(off)
- - - -
R
G
= 5Ω, V
GS
= 10V
V
DS
= 30V
I
D
= 25A
I
D
= 50A
Fig. 17. Resistive Turn-off
Switching Times vs. Drain Current
34
36
38
40
42
44
46
48
24 28 32 36 40 44 48
I
D
- Amperes
t
f
- Nanoseconds
46
50
54
58
62
66
70
74
t d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
R
G
= 5Ω, V
GS
= 10V
V
DS
= 30V
T
J
= 125ºC
T
J
= 25ºC
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
22
24
26
28
30
32
34
36
25 35 45 55 65 75 85 95 105 115 125
T
J
- Degrees Centigrade
t
r
- Nanosecond
s
R
G
= 5Ω
V
GS
= 10V
V
DS
= 30V
I
D
= 50A
I
D
= 25A
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
40
60
80
100
120
140
160
180
4 6 8 101214161820
R
G
- Ohms
t f
- Nanoseconds
25
50
75
100
125
150
175
200
t
d ( o f f )
- Nanoseconds
t
f
t
d(off)
- - - -
T
J
= 125ºC, V
GS
= 10V
V
DS
= 30V
I
D
= 50A
I
D
= 25A
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA182N055T
IXTP182N055T
IXYS REF: T_182N055T (4V) 6-01-06-A.xls
Fig. 19. Maximum Transient Thermal Impedance
0.01
0.10
1.00
0.0001 0.001 0.01 0.1 1
Pulse Width - Second
Z(th)JC - ºC / W
