TL/F/6500
5410/DM5410//DM7410 Triple 3-Input NAND Gates
June 1989
5410/DM5410/DM7410
Triple 3-Input NAND Gates
General Description
This device contains three independent gates each of which
performs the logic NAND function.
Features
YAlternate Military/Aerospace device (5410) is available.
Contact a National Semiconductor Sales Office/Distrib-
utor for specifications.
Connection Diagram
Dual-In-Line Package
TL/F/6500–1
Order Number 5410DMQB, 5410FMQB, DM5410J, DM5410W or DM7410N
See NS Package Number J14A, N14A or W14B
Function Table
YeABC
Inputs Output
ABC Y
XXL H
XLX H
LXX H
HHH L
H
e
High Logic Level
LeLow Logic Level
XeEither Low or High Logic Level
C1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
Absolute Maximum Ratings (Note)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage 7V
Input Voltage 5.5V
Operating Free Air Temperature Range
DM54 and 54 b55§Ctoa
125§C
DM74 0§Ctoa
70§C
Storage Temperature Range b65§Ctoa
150§C
Note:
The ‘‘Absolute Maximum Ratings’’ are those values
beyond which the safety of the device cannot be guaran-
teed. The device should not be operated at these limits. The
parametric values defined in the ‘‘Electrical Characteristics’’
table are not guaranteed at the absolute maximum ratings.
The ‘‘Recommended Operating Conditions’’ table will define
the conditions for actual device operation.
Recommended Operating Conditions
Symbol Parameter DM5410 DM7410 Units
Min Nom Max Min Nom Max
VCC Supply Voltage 4.5 5 5.5 4.75 5 5.25 V
VIH High Level Input Voltage 2 2 V
VIL Low Level Input Voltage 0.8 0.8 V
IOH High Level Output Current b0.4 b0.4 mA
IOL Low Level Output Current 16 16 mA
TAFree Air Operating Temperature b55 125 0 70 §C
Electrical Characteristics over recommended operating free air temperature range (unless otherwise noted)
Symbol Parameter Conditions Min Typ Max Units
(Note 1)
VIInput Clamp Voltage VCC eMin, IIeb
12 mA b1.5 V
VOH High Level Output VCC eMin, IOH eMax 2.4 3.4 V
Voltage VIL eMax
VOL Low Level Output VCC eMin, IOL eMax 0.2 0.4 V
Voltage VIH eMin
IIInput Current @Max VCC eMax, VIe5.5V 1mA
Input Voltage
IIH High Level Input Current VCC eMax, VIe2.4V 40 mA
IIL Low Level Input Current VCC eMax, VIe0.4V b1.6 mA
IOS Short Circuit VCC eMax DM54 b20 b55 mA
Output Current (Note 2) DM74 b18 b55
ICCH Supply Current with VCC eMax 36mA
Outputs High
ICCL Supply Current with VCC eMax 9 16.5 mA
Outputs Low
Switching Characteristics at VCC e5V and TAe25§C (See Section 1 for Test Waveforms and Output Load)
Symbol Parameter Conditions Min Max Units
tPLH Propagation Delay Time CLe15 pF 22 ns
Low to High Level Output RLe400X
tPHL Propagation Delay Time 15 ns
High to Low Level Output
Note 1: All typicals are at VCC e5V, TAe25§C.
Note 2: Not more than one output should be shorted at a time.
2
Physical Dimensions inches (millimeters)
14-Lead Ceramic Dual-In-Line Package (J)
Order Number 5410DMQB or DM5410J
NS Package Number J14A
14-Lead Molded Dual-In-Line Package (N)
Order Number DM7410N
NS Package Number N14A
3
5410/DM5410//DM7410 Triple 3-Input NAND Gates
Physical Dimensions inches (millimeters) (Continued)
14-Lead Ceramic Flat Package (W)
Order Number 5410FMQB or DM5410W
NS Package Number W14B
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failure to perform, when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can effectiveness.
be reasonably expected to result in a significant injury
to the user.
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