Fast Recovery Epitaxial Diode (FRED) DSEI 30 VRSM A V 1200 VRRM Type C IFAVM = 26 A VRRM = 1200 V trr = 40 ns TO-247 AD V 1200 C DSEI 30-12A A C A = Anode, C = Cathode Test Conditions Maximum Ratings IFRMS IFAVM yy IFRM TVJ = TVJM TC = 85C; rectangular, d = 0.5 tP < 10 ms; rep. rating, pulse width limited by TVJM 70 26 375 A A A IFSM TVJ = 45C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 210 A A TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 185 195 A A TVJ = 45C t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 200 180 A2s A2s TVJ = 150C; t = 10 ms (50 Hz), sine t = 8.3 ms (60 Hz), sine 170 160 A2s A2s -40...+150 150 -40...+150 C C C 138 W Features I2t TVJ TVJM Tstg Applications Ptot TC = 25C Md Mounting torque 0.8...1.2 Weight 6 Nm g Symbol Test Conditions IR TVJ = 25C TVJ = 25C TVJ = 125C Characteristic Values typ. max. VR = VRRM VR = 0.8 * VRRM VR = 0.8 * VRRM 750 250 7 mA mA mA IF = 30 A; TVJ = 150C TVJ = 25C VT0 rT For power-loss calculations only TVJ = TVJM RthJC RthCK RthJA 2.2 2.55 V V 1.65 18.2 V mW 0.9 35 K/W K/W K/W 0.25 trr IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25C 40 60 ns IRM VR = 540 V; IF = 30 A; -diF/dt = 240 A/ms L 0.05 mH; TVJ = 100C 16 18 A IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5 Data according to IEC 60747 IXYS reserves the right to change limits, test conditions and dimensions (c) 2000 IXYS All rights reserved Antiparallel diode for high frequency switching devices Anti saturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating and melting Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages VF International standard package JEDEC TO-247 AD Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 High reliability circuit operation Low voltage peaks for reduced protection circuits Low noise switching Low losses Operating at lower temperature or space saving by reduced cooling 036 Symbol 1-2 http://store.iiic.cc/ DSEI 30, 1200 V 70 A 60 6 T =100C C VVJ= 540V R 5 50 IF=30A IF=60A IF=30A IF=15A 4 IF Qr TVJ=25C TVJ=100C TVJ=150C 40 30 3 50 A TVJ=100C VR= 540V 40 max. IF=30A IF=60A IF=30A IF=15A IRM 30 20 2 20 typ. max. 1 10 0 10 typ. 0 0 0 1 2 3 V 4 1 10 100 A/s 1000 VF 0 Fig. 1 Forward current versus voltage drop. Fig. 3 Peak reverse current versus -diF/dt. 1.0 60 TVJ=100C VR=540V s 1.2 IRM trr 0.8 0.6 1200 ns V 1000 50 0.8 1.0 VFR IF=30A IF=60A IF=30A IF=15A max. 0.6 40 800 30 600 20 400 VFR tfr 0.4 QR 0.4 tfr 0.2 10 typ. 0.2 0.0 0.0 0 40 80 120 C 160 TVJ=125C IF=30A 0 0 200 TJ 400 A/s 600 0 Dimensions Fig. 6 Peak forward voltage versus diF/dt. Dim. K/W 0.8 ZthJC 0.6 0.4 0.2 0.01 0.1 1 s 0 diF/dt Fig. 5 Recovery time versus -diF/dt. 1.0 200 400 A/s 600 200 -diF/dt Fig. 4 Dynamic parameters versus junction temperature. 0.0 0.001 400 A/s 600 -diF/dt Fig. 2 Recovery charge versus -diF/dt. 1.4 Kf 200 -diF/dt 10 Millimeter Min. Max. Inches Min. Max. A B 19.81 20.32 20.80 21.46 0.780 0.819 0.800 0.845 C D 15.75 16.26 3.55 3.65 0.610 0.140 0.640 0.144 E F 4.32 5.4 5.49 6.2 0.170 0.212 0.216 0.244 G H 1.65 - 2.13 4.5 0.065 - 0.084 0.177 J K 1.0 10.8 1.4 11.0 0.040 0.426 0.055 0.433 L M 4.7 0.4 5.3 0.8 0.185 0.016 0.209 0.031 N 2.2 2.54 0.087 0.102 t Fig. 7 Transient thermal impedance junction to case. (c) 2000 IXYS All rights reserved 2-2 http://store.iiic.cc/