© 2000 IXYS All rights reserved 1 - 2
VRSM VRRM Type
V V
1200 1200 DSEI 30-12A
Symbol Test Conditions Maximum Ratings
IFRMS TVJ = TVJM 70 A
IFAVM
ÿÿ
①TC = 85°C; rectangular, d = 0.5 26 A
IFRM tP < 10 ms; rep. rating, pulse width limited by TVJM 375 A
IFSM TVJ = 45°C; t = 10 ms (50 Hz), sine 200 A
t = 8.3 ms(60 Hz), sine 210 A
TVJ = 150°C; t = 10 ms (50 Hz), sine 185 A
t = 8.3 ms(60 Hz), sine 195 A
I2tTVJ = 45°C t = 10 ms (50 Hz), sine 200 A2s
t = 8.3 ms(60 Hz), sine 180 A2s
TVJ = 150°C; t = 10 ms (50 Hz), sine 170 A2s
t = 8.3 ms(60 Hz), sine 160 A2s
TVJ -40...+150 °C
TVJM 150 °C
Tstg -40...+150 °C
Ptot TC = 25°C 138 W
MdMounting torque 0.8...1.2 Nm
Weight 6g
Symbol Test Conditions Characteristic Values
typ. max.
IRTVJ = 25°CV
R= VRRM 750 mA
TVJ = 25°CV
R= 0.8 • VRRM 250 mA
TVJ = 125°CV
R= 0.8 • VRRM 7mA
VFIF = 30 A; TVJ =150°C 2.2 V
TVJ =25°C 2.55 V
VT0 For power-loss calculations only 1.65 V
rTTVJ = TVJM 18.2 mW
RthJC 0.9 K/W
RthCK 0.25 K/W
RthJA 35 K/W
trr IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25 °C40 60 ns
IRM VR = 540 V; IF = 30 A; -diF/dt = 240 A/ms1618A
L £ 0.05 mH; TVJ = 100°C
DSEI 30 IFAVM = 26 A
VRRM = 1200 V
trr = 40 ns
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
Features
●International standard package
JEDEC TO-247 AD
●Planar passivated chips
●Very short recovery time
●Extremely low switching losses
●Low IRM-values
●Soft recovery behaviour
●Epoxy meets UL 94V-0
Applications
●Antiparallel diode for high frequency
switching devices
●Anti saturation diode
●Snubber diode
●Free wheeling diode in converters
and motor control circuits
●Rectifiers in switch mode power
supplies (SMPS)
●Inductive heating and melting
●Uninterruptible power supplies (UPS)
●Ultrasonic cleaners and welders
Advantages
●High reliability circuit operation
●Low voltage peaks for reduced
protection circuits
●Low noise switching
●Low losses
●Operating at lower temperature or
space saving by reduced cooling
Fast Recovery
Epitaxial Diode (FRED)
ACTO-247 AD
C
C
A
A = Anode, C = Cathode
036
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© 2000 IXYS All rights reserved 2 - 2
DSEI 30, 1200 V
0.001 0.01 0.1 1 10
0.0
0.2
0.4
0.6
0.8
1.0
s
t
ZthJC
K/W
0 200 400 600
0
10
20
30
40
50
60
TVJ=125°C
IF=30A
diF/dt
tfr
VFR
tfr
ns
0
200
400
600
800
1000
1200
V
VFR
0 200 400 600
0.0
0.2
0.4
0.6
0.8
1.0
-diF/dt
trr
typ.
max.
0 40 80 120 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Kf
QR
IRM
°C
TJ
0 200 400 600
0
10
20
30
40
50
A
max.
typ.
1 10 100 1000
0
1
2
3
4
5
6
µC
IRM
-diF/dt
Qr
01234
0
10
20
30
40
50
60
70
V
VF
IF
TVJ=150°C
TVJ=100°C
TVJ=25°C
A
IF=15A
IF=30A
IF=60A
IF=30A
VR= 540V
TVJ=100°C
max.
typ.
IF=15A
IF=30A
IF=60A
IF=30A
TVJ=100°C
VR= 540V
VR=540V
TVJ=100°C
IF=15A
IF=30A
IF=60A
IF=30A
µs
A/µs -diF/dt A/µs
A/µs A/µs
Dimensions Dim. Millimeter Inches
Min. Max. Min. Max.
A 19.81 20.32 0.780 0.800
B 20.80 21.46 0.819 0.845
C 15.75 16.26 0.610 0.640
D 3.55 3.65 0.140 0.144
E 4.32 5.49 0.170 0.216
F 5.4 6.2 0.212 0.244
G 1.65 2.13 0.065 0.084
H - 4.5 - 0.177
J 1.0 1.4 0.040 0.055
K 10.8 11.0 0.426 0.433
L 4.7 5.3 0.185 0.209
M 0.4 0.8 0.016 0.031
N 2.2 2.54 0.087 0.102
Fig. 1 Forward current Fig. 2 Recovery charge versus -diF/dt. Fig. 3 Peak reverse current versus
versus voltage drop. -diF/dt.
Fig. 4 Dynamic parameters versus Fig. 5 Recovery time versus -diF/dt. Fig. 6 Peak forward voltage
junction temperature. versus diF/dt.
Fig. 7 Transient thermal impedance junction to case.
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