PSMN035-100LS,115 - NXP SEMICONDUCTORS

1. Product profile

1.1 General description

Standard level N-channel MOSFET in DFN3333-8 package qualified to 150 °C. This

product is designed and qualified for use in a wide range of industrial, communications

and power supply equipment.

1.2 Features and benefits

High efficiency due to low switching

and conduction losses

Small footprint for compact designs

Suitable for standard level gate drive

sources

1.3 Applications

DC-to-DC converters

Lithium-ion batt er y pro te ct ion

Load switching

1.4 Quick reference data

PSMN035-100LS

N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET

Rev. 3 — 12 December 2011 Product data sheet

DFN3333-8

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤150 °C - - 100 V

IDdrain current Tmb =25°C; V

GS = 10 V; see Figure 1 --27A

Ptot total power dissipation Tmb = 25 °C; see Figure 2 --65W

Tjjunction temperature -55 - 150 °C

Static characteristics

RDSon drain-source on-state resistance VGS =10V; I

D=10A; T

j=100°C;

see Figure 12 --63mΩ

VGS =10V; I

D=10A; T

j=25°C;

see Figure 13 - 2932mΩ

Dynamic characteristics

QGD gate-drain charge VGS =10V; I

D=15A; V

DS =50V;

see Figure 14; see Figure 15 -7-nC

QG(tot) total gate charge - 23 - nC

Avalanche ruggedn ess

EDS(AL)S non-repetitive drain-source

avalanche energy VGS =10V; T

j(init) =25°C; I

D=27A;

Vsup ≤100 V; unclamped; RGS =50Ω

--37mJ

Product data sheet Rev. 3 — 12 December 2011 2 of 14

NXP Semiconductors PSMN035-100LS

N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET

2. Pinning information

3. Ordering information

4. Limiting values

Tabl e 2. Pinning info rmation

Pin Symbol Description Simplified outline Graphi c sy mbol

1Ssource

SOT873-1 (DFN3333-8)

2Ssource

3Ssource

4 G gate

5,6,7,8 D drain

mb D mounting base; connected to drain

1234

8765

Transparent

top view

mbb076

Table 3. Ordering information

Type number Package

Name Description Version

PSMN035-100LS DFN3333-8 plastic thermal enhanced very thin small outline package; no

leads; 8 terminals SOT873-1

Table 4. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

VDS drain-source voltage Tj≥25 °C; Tj≤150 °C - 100 V

VDGR drain-gate voltage Tj≤150 °C; Tj≥25 °C; RGS =20kΩ- 100 V

VGS gate-source voltage -20 20 V

IDdrain current VGS =10V; T

mb = 100 °C; see Figure 1 -17A

VGS =10V; T

mb =25°C; see Figure 1 -27A

IDM peak drain current pulsed; tp≤10 µs; Tmb =25°C; see Figure 3 - 109 A

Ptot total power dissipation Tmb =25°C; see Figure 2 -65W

Tstg storage temperature -55 150 °C

Tjjunction temperature -55 150 °C

Tsld(M) peak soldering temperature - 260 °C

Source-drain diode

ISsource current Tmb =25°C - 27 A

ISM peak source current pulsed; tp≤10 µs; Tmb = 25 °C - 109 A

Avalanche ruggedn ess

EDS(AL)S non-repetitive drain-source

avalanche energy VGS =10V; T

j(init) =25°C; I

D=27A;

Vsup ≤100 V; unclamped; RGS =50Ω

-37mJ

Product data sheet Rev. 3 — 12 December 2011 3 of 14

NXP Semiconductors PSMN035-100LS

N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET

Fig 1. Continuous drain current as a function of

mounting base temperature Fig 2. Normalized total power dissi pat io n as a

function of solder point temperature

Fig 3. Safe o perating area; continuous and pe ak drain currents as a function of drain -s ource voltage

003aae352

0 50 100 150

Tmb (°C)

(A)

(°C)

0 20015050 100

003aab937

120

der

(%)

003aae353

10−2

10−1

102

103

1 10 102 103

VDS (V)

(A) Limi t RDSon = VDS / ID

100 ms

10 ms

1 ms

100 μs

tp = 10 μs

Product data sheet Rev. 3 — 12 December 2011 4 of 14

NXP Semiconductors PSMN035-100LS

N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET

5. Thermal characteristics

[1] Rth(j-a) is guaranteed by design and assumes that the device is mounted on a 40mm x 40mm x 70µm copper pad at 20°C ambient

temperature. In practice Rth(j-a) will be determined by the customer’s PCB characteristics

Table 5. Thermal characteristics

Symbol Parameter Conditions Min Typ Max Unit

Rth(j-mb) thermal resistance from junction to mounting base see Figure 4 -11.3K/W

Rth(j-a) thermal resistance from junction to ambient [1] - 5360K/W

Fig 4. Transient thermal impedance from junction to mounting base as a function of pulse duration; typical

values

003aae141

−2

−1

−6

−5

−4

−3

−2

−1

(s)

single shot

0.2

0.1

0.05

0.02

th(j-mb)

(K/W)

= 0.5

tpT

δ =

Product data sheet Rev. 3 — 12 December 2011 5 of 14

NXP Semiconductors PSMN035-100LS

N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET

6. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

Static characteristics

V(BR)DSS drain-source breakdown voltage ID=0.25mA; V

GS =0V; T

j=-55°C90--V

ID=0.25mA; V

GS =0V; T

j= 25 °C 100 - - V

VGS(th) gate-source threshold voltage ID=1mA; V

DS =V

GS; Tj=150°C;

see Figure 10 1--V

ID=1mA; V

DS =V

GS; Tj=25°C;

see Figure 10; see Figure 11 2.334V

ID=1mA; V

DS =V

GS; Tj=-55°C;

see Figure 10 --4.7V

IDSS drain leakage current VDS = 100 V; VGS =0V; T

j= 125 °C - - 50 µA

VDS = 100 V; VGS =0V; T

j= 25 °C - 0.1 2 µA

IGSS gate leakage current VGS =20V; V

DS =0V; T

j= 25 °C - 10 100 nA

VGS =-20V; V

DS =0V; T

j= 25 °C - 10 100 nA

RDSon drain-source on-state

resistance VGS =10V; I

D=10A; T

j=100°C;

see Figure 12 --63mΩ

VGS =10V; I

D=10A; T

j=150°C;

see Figure 12 - 72.5 80 mΩ

VGS =10V; I

D=10A; T

j=25°C;

see Figure 13 - 2932mΩ

RGinternal gate resistance (AC) f = 1 MHz - 0.9 - Ω

Dynamic characteristics

QG(tot) total gate charge ID=15A; V

DS =50V; V

GS =10V;

see Figure 14; see Figure 15 -23-nC

ID=0A; V

DS =0V; V

GS =10V - 19 - nC

QGS gate-source charge ID=15A; V

DS =50V; V

GS =10V;

see Figure 14; see Figure 15 -5.7-nC

QGS(th) pre-threshold gate-source

charge ID=15A; V

DS =50V; V

GS =10V;

see Figure 14 -3.7-nC

QGS(th-pl) post-th reshold gate-source

charge -2-nC

QGD gate-drain charge ID=15A; V

DS =50V; V

GS =10V;

see Figure 14; see Figure 15 -7-nC

VGS(pl) gate-source plateau voltage VDS =50V; see Figure 14;

see Figure 15 -4.6-V

Ciss input capacitance VDS =50V; V

GS =0V; f=1MHz;

Tj= 25 °C; see Figure 16 - 1350 - pF

Coss output capacitance - 96 - pF

Crss reverse transfer capacitance - 60 - pF

td(on) turn-on delay time VDS =50V; R

L=3Ω; VGS =10V;

RG(ext) =4.7Ω; Tj=25°C -11-ns

trrise time -6-ns

td(off) turn-off delay time - 22 - ns

tffall time -7-ns

Product data sheet Rev. 3 — 12 December 2011 6 of 14

NXP Semiconductors PSMN035-100LS

N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET

Source-drain diode

VSD source-drain voltage IS=15A; V

GS =0V; T

j=25°C;

see Figure 17 - 0.85 1.2 V

trr reverse recovery time IS=15A; dI

S/dt = 100 A/µs;

VGS =0V; V

DS =50V -52-ns

Qrrecovered charge - 102 - nC

Table 6. Characteristics …continued

Symbol Parameter Conditions Min Typ Max Unit

Fig 5. Forward transconductance as a function of

drain current; typical values Fig 6. Transfer characteristics: drain current as a

function of gate-s ourc e vol tage; typical values

Fig 7. Input and reverse transfer capacitances as a

function of gate-source voltage; typical values Fig 8. Dr ain-so urce on-state resistance as a function

of gate-source voltage; typical values

003aae357

0 10203040

ID (A)

gfs

(S)

003aae356

0246

VGS (V)

(A)

Tj = 25 °C

Tj = 150 °C

003aae359

500

1000

1500

2000

02468

VGS (V)

(pF) Ciss

Crss

003aae360

100

0 5 10 15 20

VGS (V)

RDSon

(mΩ)

Product data sheet Rev. 3 — 12 December 2011 7 of 14

NXP Semiconductors PSMN035-100LS

N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET

Fig 9. Output characteristics: drain current as a

function of drain-source voltage; typical values Fig 10. Gate-source threshold voltage as a func tion of

junction temperature

Fig 11. Sub-threshold drain curre nt as a function of

gate-source voltage Fig 12. Normalized drain-source on-state resistance

factor as a function of junction temperature

003aae355

0 0.5 1 1.5 2

VDS (V)

(A) 4.7

VGS (V) = 4.5

003aae486

-60 0 60 120 180

Tj (°C)

VGS(th)

(V)

max

typ

min

003aae487

VGS (V)

0642

10−4

10−5

10−2

10−3

10−1

(A)

10−6

min typ max

003aae372

0.8

1.6

2.4

3.2

-60 0 60 120 180

Tj (°C)

Product data sheet Rev. 3 — 12 December 2011 8 of 14

NXP Semiconductors PSMN035-100LS

N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET

Fig 13. Drain-source on-state resistance as a function

of drain current; typical values Fig 14. Gate charge waveform definitions

Fig 15. Gate-source voltage as a function of gate

charge; typical values Fig 16. Input, output and reverse transfer capacitances

as a function of drain-source voltage; typical

values

003aae358

100

0102030

ID (A)

RDSon

(mΩ)

VGS

(V) = 4.5 4.7

003aaa508

VGS

VGS(th)

QGS1 QGS2

QGD

VDS

QG(tot)

QGS

VGS(pl)

003aae361

0102030

(nC)

VGS

(V)

VDS = 20 V

50 V

80 V

003aae362

102

103

104

10−1 1 10 102

VDS (V)

(pF)

Ciss

Coss

Crss

Product data sheet Rev. 3 — 12 December 2011 9 of 14

NXP Semiconductors PSMN035-100LS

N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET

Fig 17. Source (diode forward) current as a func tion of source-drain (diode forward) voltage; typical values

003aae363

0 0.3 0.6 0.9 1.2

VSD (V)

(A)

Tj = 150 °CTj = 25 °C

Product data sheet Rev. 3 — 12 December 2011 10 of 14

NXP Semiconductors PSMN035-100LS

N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET

7. Package outline

Fig 18. Package outline SOT873-1 (DFN3333-8)

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC JEITA

SOT873-1

10-04-19

11-12-01

DIMENSIONS (mm are the original dimensions)

DFN3333-8: plastic thermal enhanced very thin small outline package; no leads;

8 terminals; body 3.3 x 3.3 x 1.0 mm

- - -- - -- - -

UNIT A

max. A1bc ee

1L1ywv

mm 1 0.05

0.00 0.45

0.25 0.2 3.4

3.2 0.65

1.80

1.58 0.05 0.1

0.10.11.95 0.55

0.45

0.52

0.35

3.4

3.2

DhEh

2.4

2.2

0 1 2 mm

scale

detail X

AA1c

eAC B

vMCw M

terminal 1

index area

terminal 1

index area

B A

Product data sheet Rev. 3 — 12 December 2011 11 of 14

NXP Semiconductors PSMN035-100LS

N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET

8. Revision history

Table 7. Revision history

Document ID Release date Data sheet status Change notice Supersedes

PSMN035-100LS v.3 20111212 Product data sheet - PSMN035-100LS v.2

Modifications: •Various changes to conte nt.

PSMN035-100LS v.2 20100818 Product data sheet - PSMN035-100LS v.1

Product data sheet Rev. 3 — 12 December 2011 12 of 14

NXP Semiconductors PSMN035-100LS

N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET

9. Legal information

9.1 Data sheet status

[1] Please consult the most recently issued docume nt before initiating or completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The p r oduct status of device(s) described in this document may have chan ged since th is document w as published and may differ in case of multiple devices. The latest product

status information is available on the Internet at URL http://www.nxp.com.

9.2 Definitions

Preview — The document is a preview version only. The document is still

subject to formal approval, which may result in modificati ons or additions.

NXP Semiconductors does not give any representations or warranties as to

the accuracy or completeness of informati on included herein and shall have

no liability for the consequences of use of such info rmation.

Draft — The document is a draft version only. The content is still under

internal review and subject to formal approval, which may result in

modifications or additions. NXP Semiconductors does not give any

representations or warranties as to the accuracy or completeness of

information included herein and shall have no liab ility for the consequences of

use of such information.

Short data sheet — A short data sheet is an extract from a full data sh eet

with the same product type number(s) and tit le. A short data sh eet is intended

for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and

full information. For detailed and full information see the relevant full data

sheet, which is available on request via the local NXP Semiconductors sales

office. In case of any inconsistency or conflict with the short data sheet, the

full data sheet shall pre vail.

Product specifica t io n — The information and data provided in a Product

data sheet shall define the specification of the product as agreed between

NXP Semiconductors and its customer, unless NXP Semiconductors and

customer have explicitly agreed otherwise in writing. In no event however,

shall an agreement be valid in which the NXP Semiconductors product is

deemed to off er functions and qualities beyond those described in the

Product data sheet.

9.3 Disclaimers

Limited warranty and liability — Information in this d ocument is be lieved to

be accurate and reliable. However, NXP Semiconductors does not give any

representations or warranties, expressed or implied, as to the accuracy or

completeness of such information and shall have no liability for the

consequences of use of such information.

In no event shall NXP Semiconductors be liable for any indirect, incidental,

punitive, special or consequ ential damages (including - wit hout limitatio n - lost

profits, lost savings, business interruption, costs related to the removal or

replacement of any products or rework charges) whether or not such

damages are based on tort (including negligence), warranty, breach of

contract or any other legal theory.

Notwithstanding any damages that customer might incur for any reason

whatsoever, NXP Semico nductors’ aggregate and cumulative liability t owards

customer for the products described herein shall be limited in accordance

with the Terms and conditions of commercial sale of NXP Semicondu ctors.

Right to make changes — NXP Semiconductors reserves the right to make

changes to information published in this document, including without

limitation specifications and product descriptions, at any time and without

notice. This document supersed es an d r eplaces all inf ormation supplied pri or

to the publication hereof.

Suitability for use — NXP Semiconductors products are not designed,

authorized or warranted to be suitable for use in life support, life-critical or

safety-critical systems or equipment, nor in applications where failure or

malfunction of an NXP Semiconductors product can reasonably be expected

to result in perso nal injury, death or severe property or environmental

damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of

NXP Semiconductors products in such equipment or applications and

therefore such inclusion and/or use is at the customer’s own risk.

Quick reference data — The Quick reference data is an extract of the

product data given in the Limiting values and Characteristics sections of this

document, and as such is not complete, exhaustive or legally binding.

Applications — Applications that are described herein for any of these

products are for illustrative purposes only. NXP Semiconductors makes no

representation or warranty tha t such application s will be suitable for the

specified use without further testing or modification.

Customers are responsible for the design and ope ration of their applications

and products using NXP Semiconductors product s, and NXP Semiconductors

accepts no liability for any assistance with applications or customer product

design. It is customer’s sole responsibility to determine whether the NXP

Semiconductors product is suit able and fit for the custome r’s applications and

products planned, as well as fo r the planned application and use of

customer’s third party customer(s). Customers should provide appropriate

design and operating safeguards to minimize the risks associa ted with their

applications and products.

NXP Semiconductors does not accept any liability related to any default,

damage, costs or problem which is based on any weakness or default in the

customer’s applications or products, or the application or use by customer’s

third party customer(s). Customer is responsible for doing all necessary

testing for th e customer’s applications and products using NXP

Semiconductors products in order to avoid a default of the applications and

the products or of the application or use by customer’s third party

customer(s). NXP does not accept any liability in this respect.

Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

damage to the device. Limiting values are stress ratings only and (proper)

operation of the device at these or any other conditions above those given in

the Recommended operating conditions section (if present) or the

Characteristics sections of this document is not warranted. Constant or

repeated exposure to limiting values will permanent ly and irreversibly affect

the quality and reliability of the device.

Document status [1] [2] Product status [3] Definition

Objective [short] data sheet Development This document contains data from the objective specification for product development.

Preliminary [shor t] data sheet Qualification This document contains data from the preliminary spec ification.

Product [short] data sheet Production This document contains the product specification.

Product data sheet Rev. 3 — 12 December 2011 13 of 14

NXP Semiconductors PSMN035-100LS

N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET

Terms and conditions of commercial sale — NXP Semiconductors

products are sold subject to the general terms and conditions of commercial

sale, as published at http://www.nxp.com/profile/terms, unless otherwise

agreed in a valid written individual agreement. In case an individual

agreement is concluded only the terms and conditions of the respective

agreement shall apply. NXP Semiconductors hereby expressly objects to

applying the customer’s general terms and conditions with regard to the

purchase of NXP Semiconductors products by customer.

No offer to sell or license — Nothing in this document ma y be interpret ed or

construed as an of fer to sell product s that is op en for accept ance or the grant ,

conveyance or implication of any license under any copyrights, patents or

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Export control — This document as well as the item(s) d escribed herein may

be subject to export control regulat i ons. Export might require a prior

authorization from competent authorities.

Non-automotive qualified products — Unless this data sheet expressly

states that this specific NXP Semiconductors product is automotive qualified,

the product is not suitable for automotive use. It i s neit her qua lif ied nor test ed

in accordance with automotive testing or application requirements. NXP

Semiconductors accepts no liability for inclusion and/or use of

non-automotive qualified products in automotive equipment or applications.

In the event that customer uses the product for design-in and use in

automotive applications to automotive specifications and st andards, customer

(a) shall use the product without NXP Semicond uctors’ warranty of the

product for such automotive applications, use and specifications, and (b)

whenever customer uses the product for automotive applications beyond

NXP Semiconductors’ specifications such use shall be solely at customer’s

own risk, and (c) customer fully indemnifies NXP Semiconductors for any

liability, damages or failed product claims resulting from customer design and

use of the product for automotive applications beyond NXP Semiconductors’

standard warranty and NXP Semiconductors’ product specifications.

9.4 Trademarks

Notice: All referenced b rands, produc t names, service names and trademarks

are the property of their respect i ve ow ners.

Adelante, Bitport, Bitsound, CoolFlux, CoReUse, DESFire, EZ-HV,

FabKey, GreenChip, HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE,

ITEC, Labelution, MIFARE, MIFARE Plus, MIFARE Ultralight, MoReUse,

QLPAK, Silicon Tuner, SiliconMAX, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP B.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

10. Contact information

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

NXP Semiconductors PSMN035-100LS

N-channel DFN3333-8 100 V 32 mΩ standard level MOSFET

For more information, please visit: http://www.nxp.co m

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 12 December 2011

Document identifier: PSMN035-100LS

Please be aware that important notices concerning this document and the product(s)

described herein, have been included in section ‘Legal information’.

11. Contents

1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.1 General description . . . . . . . . . . . . . . . . . . . . . .1

1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . .1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . .1

1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . .1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . .2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . .2

4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . .2

5 Thermal characteristics . . . . . . . . . . . . . . . . . . .4

6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . .5

7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . .10

8 Revision history. . . . . . . . . . . . . . . . . . . . . . . . .11

9 Legal information. . . . . . . . . . . . . . . . . . . . . . . .12

9.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . .12

9.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . .12

9.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . .13

10 Contact information. . . . . . . . . . . . . . . . . . . . . .13