2SC1008 TRANSISTOR（NPN ）
FEATURES
Power dissipation
P
CM : 0.8 W（Tamb=25℃）
Collector current
ICM : 0.7 A
Collector-base voltage
V(BR)CBO : 80 V
Operating and storage junction temperature range
T
J，Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS（Tamb=25℃ unless otherwise specified）
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage V(BR)CBO Ic= 100μA ， I
E=0 80 V
Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , I
B=0 60 V
Emitter-base breakdown voltage V(BR)EBO IE= 10μA， I
C=0 8 V
Collector cut-off current ICBO VCB=60 V , IE=0 0.1 μA
Emitter cut-off current IEBO VEB= 5 V , IC=0 0.1 μA
DC current gain hFE VCE= 2 V, IC=50mA 40 400
Collector-emitter saturation voltage VCE(sat) IC= 500mA, IB=50 mA 0.4 V
Base-emitter saturation voltage VBE(sat) IC=500mA, IB=50mA 1.1 V
Transition frequency f T VCE=10V, IC= 50mA 30 MHz
CLASSIFICATION OF hFE
Rank R O Y G
Range 40-80 70-140 120-240 200-400
1 2 3
TO—92
1.EMITTER
2. BASE
3. COLLECTOR
东莞市华远电子有限公司
D
ONG
GU
A
N
S
HI H
U
A Y
U
A
N
ELE
C
TR
ON
CO.,
LTD
.
TEL 86-769-5335378 86-769-5305266 FEX 86-769-5316189
TO-92 Plastic-Encapsulate Transistors
D
b
E
A
A1
C
L
D1
e
e1
TO-92 PACKAGE OUTLINE DIMENSIONS
Symbol
A
A1
b
c
D
D1
E
e
e1
L
Ö
Min
3.300
1.100
0.380
0.360
4.400
3.430
4.300
2.440
14.100
0.000
Max
3.700
1.400
0.550
0.510
4.700
4.700
2.640
14.500
1.600
0.380
Min
0.130
0.043
0.015
0.014
0.173
0.135
0.169
0.096
0.555
0.000
Max
0.146
0.055
0.022
0.020
0.185
0.185
0.104
0.571
0.063
0.015
Dimensions In Millimeters Dimensions In Inches
0.050TYP
1.270TYP
φ
