
BL Galaxy Electrical Production specification
Dual NPN Small Signal Surface Mount Transistor MMDT4401
Document number: BL/SSSTE005 www.galaxycn.com
Rev.A 2
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter Symbol Test conditions MIN MAX UNIT
Collector-base breakdown voltage V(BR)CBO IC=100μA IE=0 60 - V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA IB=0 B40 - V
Emitter-base breakdown voltage V(BR)EBO IE=100μA IC=0 6 - V
Collector cut-off current ICBO VCB=50V IE=0 - 0.1 μA
Collector cut-off current ICEO VCE=35V IB=0 B- 0.1 μA
Emitter cut-off current IEBO VEB=5V IC=0 - 0.1 μA
VCE=1V IC=0.1mA 20 -
VCE=1V IC=1.0mA 40 -
VCE=1V IC=10mA 80 -
VCE=1V IC=150mA 100 300
DC current gain hFE
VCE=2V IC=500mA 40 -
-
Collector-emitter saturation voltage VCE(sat)
IC=150mA IB=15mA B
IC=500mA IB=50mA B
- 0.4
0.75 V
Base-emitter saturation voltage VBE(sat)
IC=150mA IB=15mA B
IC=500mA IB=50mA B
0.75
-
0.95
1.2 V
Transition frequency fTVCE=10V IC=20mA f=100MHz 250 MHz
Output Capacitance Cob VCB=5V,f=1.0MHz,IE=0 - 6.5 pF
Delay time td 15 ns
Rise time tr
VCC=30V, VBE=2V
IC=150mA , IB1= 15mA 20 ns
Storage time ts 225 ns
Fall time tf
VCC=30V, IC=150mA
IB1=IB2=15mA 30 ns