Preliminary Technical Information IXTK8N150L IXTX8N150L Linear Power MOSFET w/Extended FBSOA VDSS ID25 = 1500V = 8A < 3.6 RDS(on) N-Channel Enhancement Mode Guaranteed FBSOA TO-264(IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1500 V VDGR TJ = 25C to 150C, RGS = 1M 1500 V VGSS Continuous 30 V VGSM Transient 40 V ID25 IDM TC = 25C TC = 25C, Pulse Width Limited by TJM 8 20 A A PD TC = 25C 700 W -55 to +150 C TJM 150 C Tstg -55 to +150 C TJ TL 1.6mm (0.063 in.) from Case for 10s 300 C TSOLD Plastic Body for 10s 260 C Md FC Mounting Torque (IXTK) Mounting Force (IXTX) 1.13/10 20..120 / 4.5..27 Nm/lb.in. N/lb. Weight TO-264 PLUS247 10 6 g g G G z VGS = 0V, ID = 1mA 1500 VGS(th) VDS = VGS, ID = 250A IGSS VGS = 30V, VDS = 0V IDSS VDS = VDSS VGS = 0V RDS(on) VGS = 20V, ID = 0.5 * ID25 , Note 1 5.0 TJ = 125C V z z V 200 nA z 50 A 3 mA z z z Designed for Linear Operations International Standard Packages Guaranteed FBSOA at 60C Molding Epoxies Meet UL94 V-0 Flammability Classification Programmable Loads Current Regulators DC-DC Convertors Battery Chargers DC Choppers Temperature and Lighting Controls Advantages z z z (c) 2009 IXYS CORPORATION, All Rights Reserved D = Drain TAB = Drain Applications 8.0 3.6 (TAB) S Features z BVDSS D G = Gate S = Source z Characteristic Values Min. Typ. Max. (TAB) S PLUS247(IXTX) z Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) D Easy to Mount Space Savings High Power Density DS99616A(2/09) IXTK8N150L IXTX8N150L Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) Characteristic Values Min. Typ. Max. gfs 1.4 VDS = 50V, ID = 0.5 * ID25, Note 1 2.3 Ciss Coss VGS = 0V, VDS = 25V, f = 1MHz tr td(off) tf pF 405 pF 70 pF 36 ns 18 ns 90 ns 95 ns 250 nC 80 nC 116 nC Resistive Switching Times VGS = 15V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 (External) Qg(on) Qgs VGS= 15V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 Qgd S 8000 Crss td(on) 3.2 RthJC TO-264 (IXTK) Outline 0.18 C/W RthCS 0.15 C/W Safe Operating Area Specification Symbol Test Conditions Min. SOA VDS = 1000V, ID = 0.5A, TC = 60C, TP = 3s Characteristic Values Typ. Max. 500 W PLUS 247TM (IXTX) Outline Source-Drain Diode Symbol Test Conditions (TJ = 25C, Unless Otherwise Specified) IS VGS = 0V ISM Characteristic Values Min. Typ. Max. 8 A Repetitive, Pulse Width Limited by TJM 32 A VSD IF = 8A, VGS = 0V, Note 1 1.2 V trr IF = IS, -di/dt =100A/s, VR = 100V 1700 ns Terminals: Notes: 1. Pulse Test, t 300s; Duty Cycle, d 2%. Dim. PRELIMINARY TECHNICAL INFORMATION The product presented herein is under development. The Technical Specifications offered are derived from data gathered during objective characterizations of preliminary engineering lots; but also may yet contain some information supplied during a pre-production design evaluation. IXYS reserves the right to change limits, test conditions, and dimensions without notice. A A1 A2 b b1 b2 C D E e L L1 Q R 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS MOSFETs and IGBTs are covered 4,835,592 by one or more of the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,727,585 7,005,734 B2 6,710,405 B2 6,759,692 7,063,975 B2 6,710,463 6,771,478 B2 7,071,537 7,157,338B2 IXTK8N150L IXTX8N150L Fig. 1. Extended Output Characteristics @ 25C Fig. 2. Output Characteristics @ 125C 11 8 VGS = 20V 10 VGS = 20V 7 9 6 14V 7 ID - Amperes ID - Amperes 8 6 5 12V 4 12V 5 4 3 10V 3 2 2 10V 8V 9V 0 0 4 8 12 16 20 24 9V 1 1 0 28 0 32 5 10 15 20 25 30 35 45 VDS - Volts Fig. 3. RDS(on) Normalized to ID = 4A Value vs. Junction Temperature Fig. 4. RDS(on) Normalized to ID = 4A Value vs. Drain Current 2.8 50 2.4 2.6 VGS = 10V 2.2 TJ = 125C 2.4 2.2 RDS(on) - Normalized RDS(on) - Normalized 40 VDS - Volts I D = 8A 2.0 I D = 4A 1.8 1.6 1.4 1.2 1.0 2.0 1.8 VGS = 20V 1.6 1.4 1.2 TJ = 25C 0.8 1.0 0.6 0.4 0.8 -50 -25 0 25 50 75 100 125 150 0 1 2 3 4 TJ - Degrees Centigrade Fig. 5. Maximum Drain Current vs. Case Temperature 6 7 8 9 10 11 Fig. 6. Input Admittance 9 9 8 8 7 7 6 6 ID - Amperes ID - Amperes 5 ID - Amperes 5 4 TJ = 125C 25C - 40C 5 4 3 3 2 2 1 1 0 0 -50 -25 0 25 50 75 TC - Degrees Centigrade (c) 2009 IXYS CORPORATION, All Rights Reserved 100 125 150 6 7 8 9 10 VGS - Volts 11 12 13 14 IXTK8N150L IXTX8N150L Fig. 8. Forward Voltage Drop of Intrinsic Diode Fig. 7. Transconductance 4.5 28 TJ = - 40C 4.0 24 3.5 25C 20 IS - Amperes g f s - Siemens 3.0 125C 2.5 2.0 16 12 1.5 TJ = 125C 8 1.0 TJ = 25C 4 0.5 0.0 0 0 1 2 3 4 5 6 7 8 9 0.4 0.5 0.6 ID - Amperes Fig. 9. Gate Charge 0.8 0.9 1.0 Fig. 10. Capacitance 100,000 20 f = 1 MHz VDS = 750V 18 Capacitance - PicoFarads I D = 4A 16 I G = 10mA 14 VGS - Volts 0.7 VSD - Volts 12 10 8 6 Ciss 10,000 1,000 Coss 100 4 Crss 2 0 10 0 40 80 120 160 200 240 280 320 0 5 10 15 20 25 30 35 40 VDS - Volts QG - NanoCoulombs Fig. 11. Maximum Transient Thermal Impedance Z(th)JC - C / W 1.000 0.100 0.010 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width - Seconds IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions. IXYS REF: T_8N15L(8N)01-30-09 IXTK8N150L IXTX8N150L Fig. 12. Forward-Bias Safe Operating Area @ Fig. 13. Forward-Bias Safe Operating Area T C = 25C @ T C = 60C 100.0 100.0 RDS(on) Limit RDS(on) Limit 25s 10.0 10.0 25s ID - Amperes ID - Amperes 100s 1ms 10ms 100s 1ms 10ms 1.0 1.0 100ms 100ms DC TJ = 150C TJ = 150C TC = 25C Single Pulse TC = 60C Single Pulse 0.1 DC 0.1 10 100 1,000 VDS - Volts (c) 2009 IXYS CORPORATION, All Rights Reserved 10,000 10 100 1,000 10,000 VDS - Volts IXYS REF: T_8N15L(8N)01-30-09