Z3SMC33 - DIOTEC SEMICONDUCTOR AG

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25°C to 150°C 1500 V

VDGR TJ= 25°C to 150°C, RGS = 1MΩ1500 V

VGSS Continuous ±30 V

VGSM Transient ±40 V

ID25 TC= 25°C 8 A

IDM TC= 25°C, Pulse Width Limited by TJM 20 A

PDTC= 25°C 700 W

TJ-55 to +150 °C

TJM 150 °C

Tstg -55 to +150 °C

TL1.6mm (0.063 in.) from Case for 10s 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Torque (IXTK) 1.13/10 Nm/lb.in.

FCMounting Force (IXTX) 20..120 / 4.5..27 N/lb.

Weight TO-264 10 g

PLUS247 6 g

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 1mA 1500 V

VGS(th) VDS = VGS, ID = 250μA 5.0 8.0 V

IGSS VGS = ±30V, VDS = 0V ±200 nA

IDSS VDS = VDSS 50 μA

VGS = 0V TJ = 125°C 3 mA

RDS(on) VGS = 20V, ID = 0.5 • ID25 , Note 1 3.6 Ω

Linear Power MOSFET

w/Extended FBSOA

IXTK8N150L

IXTX8N150L

N-Channel Enhancement Mode

Guaranteed FBSOA

VDSS = 1500V

ID25 = 8A

RDS(on) < 3.6ΩΩ

ΩΩ

Ω

DS99616A(2/09)

Preliminary Technical Information

Features

zDesigned for Linear Operations

zInternational Standard Packages

zGuaranteed FBSOA at 60°C

zMolding Epoxies Meet UL94 V-0

Flammability Classification

Applications

zProgrammable Loads

zCurrent Regulators

zDC-DC Convertors

zBattery Chargers

zDC Choppers

zTemperature and Lighting Controls

Advantages

zEasy to Mount

zSpace Savings

zHigh Power Density

G = Gate D = Drain

S = Source TAB = Drain

TO-264(IXTK)

GDS

PLUS247(IXTX)

(TAB)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTK8N150L

IXTX8N150L

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 50V, ID = 0.5 • ID25, Note 1 1.4 2.3 3.2 S

Ciss 8000 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 405 pF

Crss 70 pF

td(on) 36 ns

tr 18 ns

td(off) 90 ns

tf 95 ns

Qg(on) 250 nC

Qgs VGS= 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 80 nC

Qgd 116 nC

RthJC 0.18 °C/W

RthCS 0.15 °C/W

Safe Operating Area Specification

Symbol Test Conditions Characteristic Values

Min. Typ. Max.

SOA VDS = 1000V, ID = 0.5A, TC = 60°C, TP = 3s 500 W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25°C, Unless Otherwise Specified) Min. Typ. Max.

ISVGS = 0V 8 A

ISM Repetitive, Pulse Width Limited by TJM 32 A

VSD IF = 8A, VGS = 0V, Note 1 1.2 V

trr IF = IS, -di/dt =100A/μs, VR = 100V 1700 ns

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Notes: 1. Pulse Test, t ≤ 300μs; Duty Cycle, d ≤ 2%.

Resistive Switching Times

VGS = 15V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 2Ω (External)

TO-264 (IXTK) Outline

PRELIMINARY TECHNICAL INFORMATION

The product presented herein is under development. The Technical Specifications offered are derived

from data gathered during objective characterizations of preliminary engineering lots; but also may yet

contain some information supplied during a pre-production design evaluation. IXYS reserves the right

to change limits, test conditions, and dimensions without notice.

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.83 5.21 .190 .205

A12.29 2.54 .090 .100

A21.91 2.16 .075 .085

b 1.14 1.40 .045 .055

b11.91 2.13 .075 .084

b22.92 3.12 .115 .123

C 0.61 0.80 .024 .031

D 20.80 21.34 .819 .840

E 15.75 16.13 .620 .635

e 5.45 BSC .215 BSC

L 19.81 20.32 .780 .800

L1 3.81 4.32 .150 .170

Q 5.59 6.20 .220 0.244

R 4.32 4.83 .170 .190

Terminals: 1 - Gate

2 - Drain (Collector)

3 - Source (Emitter)

4 - Drain (Collector)

PLUS 247TM (IXTX) Outline

Fi g . 1. Extend ed Outp u t C h aracter i stics

@ 25ºC

0

1

2

3

4

5

6

7

8

9

10

11

0 4 8 121620242832

V

DS - Vo lt s

ID - A mp ere s

V

GS

= 20V

9

V

10

V

12

V

14V

Fi g . 2. Outp u t C har acter isti cs

@ 125ºC

0

1

2

3

4

5

6

7

8

0 5 10 15 20 25 30 35 40 45 50

V

DS - Volts

ID - Am peres

V

GS

= 20V

9

V

12V

8V

10V

Fig. 3. R

DS(on)

Normalized to I

D

= 4A Value

vs. Junction Tem perature

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

-50 -25 0 25 50 75 100 125 150

T

J - Degrees Centigrade

RDS(on) - No rma lize d

V

GS

= 10V

I

D

= 8A

I

D

= 4A

Fig. 4. R

DS(on)

Normalized to I

D

= 4A Value

vs. Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

01234567891011

I

D - Amp eres

RDS(on) - No rmaliz ed

V

GS

= 20V

T

J

= 125ºC

T

J

= 25ºC

Fi g . 6. I n p u t Admi ttan ce

0

1

2

3

4

5

6

7

8

9

6 7 8 9 10 11 12 13 14

V

GS - V o lts

ID - A mp ere s

T

J

= 125ºC

25ºC

- 40ºC

Fi g . 5. Maximum D r ain C u r r en t vs.

Case Temp eratu re

0

1

2

3

4

5

6

7

8

9

-50 -25 0 25 50 75 100 125 150

T

C - Degrees Centigrade

ID - A mp ere s

IXTK8N150L

IXTX8N150L

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTK8N150L

IXTX8N150L

Fig. 7. T ransconductance

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0123456789

I

D

- Amperes

g

f s - Siemens

T

J

= - 40ºC

25ºC

125ºC

Fig. 8. Forward Voltage Drop of

Intrinsic Diod e

0

4

8

12

16

20

24

28

0.4 0.5 0.6 0.7 0.8 0.9 1.0

V

SD

- Volts

I

S

- A mp e res

T

J

= 125ºC

T

J

= 25ºC

Fig. 9. Gate Charge

0

2

4

6

8

10

12

14

16

18

20

0 40 80 120 160 200 240 280 320

Q

G

- NanoCoulombs

V

GS

- V o lts

V

DS

= 750V

I

D

= 4A

I

G

= 10mA

Fig. 10. Capacitance

10

100

1,000

10,000

100,000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarads

f

= 1 MHz

Ciss

Crss

Coss

Fi g . 11. Maximum Transi en t Ther mal Imped an ce

0.001

0.010

0.100

1.000

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W

IXYS REF: T_8N15L(8N)01-30-09

Fi g . 12. F o r ward -B i as Safe Op erati n g Ar ea @

T

C

= 25ºC

0.1

1.0

10.0

100.0

10 100 1,000 10,000

V

DS

- V olt s

I

D

- Am peres

TJ = 150ºC

TC = 25ºC

Single Pulse

1ms

100µs

R

DS(on)

Limit

10ms

DC

25µs

100ms

Fi g . 13. F o r w ard-B i as Safe O p er ati n g Area

@ T

C

= 60ºC

0.1

1.0

10.0

100.0

10 100 1,000 10,000

V

DS

- Vo lt s

I

D

- Amperes

TJ = 150ºC

TC = 60ºC

Sing le Pulse

1ms

100µs

R

DS(on)

Limit

10ms

DC

25µs

100ms

IXTK8N150L

IXTX8N150L

IXYS REF: T_8N15L(8N)01-30-09