2N5878 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

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  

. . . designed for general–purpose power amplifier and switching applications.

•Low Collector–Emitter Saturation Voltage —

VCE(sat) = 1.0 Vdc (Max) @ IC = 5.0 Adc

•Low Leakage Current —

ICEX = 0.5 mAdc (Max) @ Rated Voltage

•Excellent DC Current Gain —

hFE = 20 (Min) @ IC = 4.0 Adc

•High Current Gain — Bandwidth Product —

fT = 4.0 MHz (Min) @ IC = 0.5 A

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS (1)

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

2N5877

ÎÎÎÎ

2N5878

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

4.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Device Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

150

0.857

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to +200

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

1.17

ÎÎÎ

C/W

(1) Indicates JEDEC Registered Data.

PD, POWER DISSIPATION (WATTS)

160

00 25 50 75 100 125 150 175 200

Figure 1. Power Derating

TC, CASE TEMPERATURE (

120

140

100



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N5877/D

 Motorola, Inc. 1995





10 AMPERE

COMPLEMENTARY

SILICON

POWER TRANSISTORS

60–80 VOLTS

150 WATTS

CASE 1–07

TO–204AA

(TO–3)



REV 7

 

2Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1) 2N5877

(IC = 200 mAdc, IB = 0) 2N5878

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 30 Vdc, IB = 0) 2N5877

(VCE = 40 Vdc, IB = 0) 2N5878

ÎÎÎÎ

ICEO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N5877

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N5878

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 150

C) 2N5877

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150

C) 2N5878

ÎÎÎÎ

ICEX

ÎÎÎÎ

—

ÎÎÎÎ

0.5

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) 2N5877

(VCB = 80 Vdc, IE = 0) 2N5878

ÎÎÎÎ

ICBO

ÎÎÎÎ

—

ÎÎÎÎ

0.5

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current (VEB = 5.0 Vdc, IE = 0)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (1)

(IC = 1.0 Adc, VCE = 4.0 Vdc)

(IC = 4.0 Adc, VCE = 4.0 Vdc)

(IC = 10 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

hFE

ÎÎÎÎ

4.0

ÎÎÎÎ

—

100

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (1)

(IC = 5.0 Adc, IB = 0.5 Adc)

(IC = 10 Adc, IB = 2.5 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

1.0

3.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage (1) (IC = 10 Adc, IB = 2.5 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

2.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (1) (IC = 4.0 Adc, VCE = 4.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product (2) (IC = 0.5 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)

ÎÎÎÎ

4.0

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, f = 1.0 MHz) 2N5877, 2N5878

ÎÎÎÎ

Cob

ÎÎÎÎ

—

ÎÎÎÎ

300

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain (IC = 1.0 Adc, VCE = 4.0 Vdc, f = 1.0 kHz)

ÎÎÎÎ

hfe

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 30 Vdc, IC = 4.0 Adc, IB1 = IB2 = 0.4 Adc,

See Figure 2)

ÎÎÎÎ

—

ÎÎÎÎ

0.7

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 30 Vdc, IC = 4.0 Adc, IB1 = IB2 = 0.4 Adc,

See Figure 2)

ÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

See Figure 2)

ÎÎÎÎ

—

ÎÎÎÎ

0.8

ÎÎÎ

µs

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

(2) fT = |hfe| • ftest.

Figure 2. Switching Time Test Circuit

–11 V

+7.0 V

SCOPE

VCC

–30 V

tr, tf

≤

10 ns

DUTY CYCLE = 1.0%

D1 MUST BE FAST RECOVERY TYPE, eg:

1N5825 USED ABOVE IB

≈

100 mA

MSD6100 USED BELOW IB

≈

100 mA

FOR CURVES OF FIGURES 3 and 6,

RB and RC ARE VARIED TO OBTAIN

DESIRED CURRENT LEVELS

For PNP test circuit,

reverse all polarities.

7.5

Ω

+9.0 V

Figure 3. Turn–On Time

1.0

0.1 IC, COLLECTOR CURRENT (AMPERES)

0.5

0.2

0.1

0.01 0.2 0.3 0.5 0.7 2.0 10

VCC = 30 V

IC/IB = 10

TJ = 25

0.07

t, TIME ( s)

1.0

0.3

0.7

7.0

0.05

0.03

0.02

3.0 5.0

2N5877, 2N5878 (NPN)

td @ VBE(off) = 5.0 V

 

Motorola Bipolar Power Transistor Device Data

Figure 4. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

r(t), EFFECTIVE TRANSIENT THERMAL

RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1000500

JC(t) = r(t)

JC = 1.17

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

0.02 0.03 0.3 3.0 30 300

5.0

Figure 5. Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

7.0

5.0

3.0

0.2 7.0 10 30 50 100

SECOND BREAKDOWN LIMITED

BONDING WIRE LIMITED

THERMAL LIMITATION @ TC = 25

(SINGLE PULSE)

2.0

IC, COLLECTOR CURRENT (AMPERES)

TJ = 200

CURVES APPLY BELOW RATED VCEO

1.0

0.7

0.5

2N5875, 2N5877

0.3

0.1 ms

0.5 ms

1.0 ms

5.0 ms

2N5876, 2N5878

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation,

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 5 is based on TJ(pk) = 200

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

< 200

C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

0.1

Figure 6. Turn–Off Time

IC, COLLECTOR CURRENT (AMPERES)

5.0

3.0

0.7

0.3

0.1 0.2 0.3 0.5 0.7 2.0 5.0 10

VCC = 30 V

IC/IB = 10

IB1 = IB2

TJ = 25

0.2

t, TIME ( s)

1.0

700

0.5

Figure 7. Capacitance

VR, REVERSE VOLTAGE (VOLTS)

70 5.0 10 20 30 501.0 2.0 3.0

C, CAPACITANCE (pF)

500

200

100

TJ = 25

Cib

2.0

7.0

300

3.0

2N5877, 2N5878 (NPN)

tfCob

1.0

0.5

2N5877, 2N5878 (NPN)

 

4Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO–204AA OUTLINE SHALL APPLY.

STYLE 1:

PIN 1. BASE

2. EMITTER

CASE: COLLECTOR

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B––– 1.050 ––– 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N––– 0.830 ––– 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

–T–

SEATING

PLANE

2 PLD

0.13 (0.005) Y M

0.13 (0.005) T

–Q–

–Y–

CASE 1–07

TO–204AA (TO–3)

ISSUE Z

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2N5877/D

*2N5877/D*

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