MJE700G - ON Semiconductor L.L.C.

May, 2011 − Rev. 11

1Publication Order Number:

MJE700/D

MJE700, MJE702, MJE703

(PNP) - MJE800, MJE802,

MJE803 (NPN)

Plastic Darlington

Complementary Silicon

Power Transistors

These devices are designed for general−purpose amplifier and

low−speed switching applications.

Features

•High DC Current Gain −hFE = 2000 (Typ) @ IC

= 2.0 Adc

•Monolithic Construction with Built−in Base−Emitter Resistors to

Limit Leakage − Multiplication

•Choice of Packages − MJE700 and MJE800 Series

•Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MJE700, MJE800

MJE702, MJE703, MJE802, MJE803

VCEO 60

Vdc

Collector−Base Voltage

MJE700, MJE800

MJE702, MJE703, MJE802, MJE803

VCB 60

Vdc

Emitter−Base Voltage VEB 5.0 Vdc

Collector Current IC4.0 Adc

Base Current IB0.1 Adc

Total Power Dissipation @ TC = 25_C

Derate above 25_C

PD40

0.32

mW/_C

Operating and Storage Junction

Temperature Range

TJ, Tstg –55 to +150 _C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Case qJC 6.25 _C/W

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

4.0 AMPERE

DARLINGTON POWER

TRANSISTORS

COMPLEMENTARY SILICON

40 WATT

50 WATT

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TO−225

CASE 77

STYLE 1

MARKING DIAGRAM

YWW

JEx0yG

Y = Year

WW = Work Week

JEx0y = Device Code

x = 7 or 8

y = 0, 2, or 3

G=Pb−Free Package

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

ORDERING INFORMATION

COLLECTOR 2

BASE

EMITTER 1

COLLECTOR 2

BASE

EMITTER 1

NPN PNP

MJE800 MJE700

MJE802

MJE803

MJE702

MJE703

MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)

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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1) MJE700, MJE800

(IC = 50 mAdc, IB = 0) MJE702, MJE703, MJE802, MJE803

V(BR)CEO 60

−

Vdc

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0) MJE700, MJE800

(VCE = 80 Vdc, IB = 0) MJE702, MJE703, MJE802, MJE803

ICEO

−

100

mAdc

Collector Cutoff Current

(VCB = Rated BVCEO, IE = 0)

(VCB = Rated BVCEO, IE = 0, TC = 100_C)

ICBO

−

100

500

mAdc

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

IEBO −2.0 mAdc

ON CHARACTERISTICS

DC Current Gain (Note 1)

(IC = 1.5 Adc, VCE = 3.0 Vdc) MJE700, MJE702, MJE800, MJE802

(IC = 2.0 Adc, VCE = 3.0 Vdc) MJE703, MJE803

(IC = 4.0 Adc, VCE = 3.0 Vdc) All devices

hFE 750

750

100

−

Collector−Emitter Saturation Voltage (Note 1)

(IC = 1.5 Adc, IB = 30 mAdc) MJE700, MJE702, MJE800, MJE802

(IC = 2.0 Adc, IB = 40 mAdc) MJE703, MJE803

(IC = 4.0 Adc, IB = 40 mAdc) All devices

VCE(sat)

−

2.5

2.8

3.0

Vdc

Base−Emitter On Voltage (Note 1)

(IC = 1.5 Adc, VCE = 3.0 Vdc) MJE700, MJE702, MJE800, MJE802

(IC = 2.0 Adc, VCE = 3.0 Vdc) MJE703, MJE803

(IC = 4.0 Adc, VCE = 3.0 Vdc) All devices

VBE(on)

−

2.5

3.0

Vdc

DYNAMIC CHARACTERISTICS

Small−Signal Current Gain

(IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)

hfe 1.0 − −

1. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.

TC, CASE TEMPERATURE (°C)

50 125 150

PD, POWER DISSIPATION (WATTS)

TO-220AB

Figure 1. Power Derating

75 100

TO-126

MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)

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0.04 0.2 2.00.1

0.06 0.4 1.0

4.0

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)μ

2.0

1.0

0.8

0.6

0.4

0.2

Figure 2. Switching Times Test Circuit

td @ VBE(off) = 0

PNP

NPN

4.00.6

Figure 3. Switching Times

APPROX

+8.0 V

0≈ 6.0 k

SCOPE

VCC

-30 V

For td and tr, D1 id disconnected

and V2 = 0, RB and RC are varied

to obtain desired test currents.

For NPN test circuit, reverse diode,

polarities and input pulses.

25 ms

tr, tf ≤ 10 ns

DUTY CYCLE = 1.0%

+ 4.0 V

RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS

D1, MUST BE FAST RECOVERY TYPE, e.g.:

1N5825 USED ABOVE IB ≈ 100 mA

MSD6100 USED BELOW IB ≈ 100 mA

APPROX

-12 V

TUT

D1≈ 150

VCC = 30 V

IC/IB = 250

IB1 = IB2

TJ = 25°C

t, TIME (ms)

1.0

0.01

0.5

0.2

0.1

0.05

0.02

r(t), TRANSIENT THERMAL RESISTANCE

0.05 1.0 2.0 5.0 10 20 50 100 200 1000500

qJC(t) = r(t) qJC

qJC = 3.12°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.01

SINGLE PULSE

0.1

0.7

0.3

0.07

0.03

0.02 0.1 0.50.2

Figure 4. Thermal Response (MJE700, 800 Series)

0.03 3.0 30 3000.3

(NORMALIZED)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.1

100

2.0

5.0

0.5

Figure 5. MJE700 Series

MJE702, 703

MJE700

1.0

3.0

1.0ms

70503020107.05.0

100ms

TJ = 150°C

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.1

Figure 6. MJE800 Series

IC, COLLECTOR CURRENT (AMP)

10070503020107.05.0

0.2

0.7

0.3

7.0

2.0

5.0

0.5

1.0

3.0

0.2

0.7

0.3

7.0

5.0ms

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

100ms

1.0ms

5.0ms

TJ = 150°C

BONDING WIRE LIMITED

THERMALLY LIMITED

@ TC = 25°C (SINGLE PULSE)

SECOND BREAKDOWN LIMITED

MJE802, 803

MJE800

ACTIVE−REGION SAFE−OPERATING AREA

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC − VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figures 5 and 6 are based on TJ(pk) = 150_C;

TC is variable depending on conditions. Second breakdown

pulse limits are valid for duty cycles to 10% provided TJ(pk)

< 150_C. TJ(pk) may be calculated from the data in Figure 4.

At high case temperatures, thermal limitations will reduce

the power that can be handled to values less than the

limitations imposed by second breakdown.

MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)

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VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

IC, COLLECTOR CURRENT (AMP)

PNP

MJE700 Series

NPN

MJE800 Series

Figure 7. DC Current Gain

Figure 8. Collector Saturation Region

Figure 9. “On” Voltages

0.04

IC, COLLECTOR CURRENT (AMP)

300

0.06 0.2

2.0 k

800

4.0 k

hFE, DC CURRENT GAIN

VCE = 3.0 V

TJ = 125°C

3.0 k

0.1 0.6

25°C

-55°C

1.0 k

0.4 1.0

6.0 k

400

600

2.0 4.0 0.04

300

0.06 0.2

2.0 k

800

4.0 k

hFE, DC CURRENT GAIN

3.0 k

0.1 0.6

1.0 k

0.4 1.0

6.0 k

400

600

2.0 4.0

3.4

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.60.1 0.2 0.5 102.0 5.0

IC =

0.5 A

1.0 A

1.0

TJ = 25°C

3.0

1.0

0.04

IC, COLLECTOR CURRENT (AMP)

1.4

1.0

V, VOLTAGE (VOLTS)

2.2

1.8

0.6

0.2

0.06 0.2 2.00.1 0.60.4 1.0 4.0 0.04

IC, COLLECTOR CURRENT (AMP)

1.4

1.0

V, VOLTAGE (VOLTS)

2.2

1.8

0.6

0.2

0.06 0.2 2.00.1 0.60.4 1.0 4.0

20 50 100

3.4

IB, BASE CURRENT (mA)

2.6

2.2

1.8

1.4

0.6

0.1 0.2 0.5 102.0 5.01.0

3.0

1.0

20 50 100

VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 250

2.0 A 4.0 A

TJ = 25°C

VCE = 3.0 V

TJ = 125°C

25°C

-55°C

IC =

0.5 A

1.0 A

TJ = 25°C

2.0 A 4.0 A

VBE(sat) @ IC/IB = 250 VBE @ VCE = 3.0 V

VCE(sat) @ IC/IB = 250

TJ = 25°C

MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)

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ORDERING INFORMATION

Device Package Shipping

MJE700 TO−225

50 Units / Bulk

MJE700G TO−225

(Pb−Free)

MJE702 TO−225

MJE702G TO−225

(Pb−Free)

MJE703 TO−225

MJE703G TO−225

(Pb−Free)

MJE800 TO−225

MJE800G TO−225

(Pb−Free)

MJE802 TO−225

MJE802G TO−225

(Pb−Free)

MJE803 TO−225

MJE803G TO−225

(Pb−Free)

MJE700, MJE702, MJE703 (PNP) − MJE800, MJE802, MJE803 (NPN)

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PACKAGE DIMENSIONS

TO−225

CASE 77−09

ISSUE Z

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. 077-01 THRU -08 OBSOLETE, NEW STANDARD

077-09.

−B−

−A−M

132

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.065 1.15 1.65

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 --- 1.02 ---

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

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PUBLICATION ORDERING INFORMATION

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Phone: 81−3−5773−3850

MJE700/D

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