AO3160
600V,0.04A N-Channel MOSFET
General Description Product Summary
700V@150℃
I
D
(at V
GS
=10V) 0.04A
R
DS(ON)
(at V
GS
=10V) < 500Ω
R
DS(ON)
(at V
GS
=4.5V) < 600Ω
Symbol
V
DS
The AO3160 is fabricated using an advanced high voltage
MOSFET process that is designed to deliver high levels
of performance and robustness in popular AC-DC
applications.
By providing low R
DS(on)
, C
iss
and C
rss
along with
guaranteed avalanche capability this device can be
adopted quickly into new and existing offline power supply
designs.
V
DS
V
UnitsParameter
Absolute Maximum Ratings T
A
=25°C unless otherwise noted
Maximum
Drain-Source Voltage
600
SOT23A
Top View Bottom View
D
G
S
G
S
D
G
D
S
V
DS
V
GS
I
DM
Peak diode recovery dv/dt dv/dt
T
J
, T
STG
Symbol
t ≤ 10s
Steady-State
Steady-State
R
θJL
Maximum Junction-to-Lead
C
°C/W
°C/W
63 125
80
100
V/ns5
P
D
T
A
=25°C
Maximum Junction-to-Ambient
A
R
θJA
Maximum Junction-to-Ambient
A
90
W
Max
Thermal Characteristics Units
°C/W70
Parameter Typ
V
Drain-Source Voltage
600
V±20Gate-Source Voltage
T
A
=70°C A
I
D
T
A
=25°C 0.04
0.03
0.12Pulsed Drain Current
B
Continuous Drain
Current
A,F
Junction and Storage Temperature Range -50 to 150 °C
Power Dissipation
A
T
A
=70°C 1.39
0.89
SOT23A
Top View Bottom View
D
G
S
G
S
D
G
D
S
www.aosmd.com Page 1 of 5
AO3160
Symbol Min Typ Max Units
600 - -
- 700 -
BV
DSS
/∆TJ - 0.64 - V/
o
C
- - 1
- - 10
I
GSS
Gate-Body leakage current - - ±100 nΑ
V
GS(th)
Gate Threshold Voltage 1.4 2 3.2 V
- 232 500 Ω
- 315 600 Ω
g
FS
- 0.024 - S
V
SD
- 0.74 1 V
I
S
Maximum Body-Diode Continuous Current - - 0.04 A
I
SM
- - 0.12 A
C
iss
- 10 15 pF
C
oss
- 1.8 3 pF
C
rss
- 0.7 1 pF
R
g
5 10 15 Ω
Q
g
- 1 1.5 nC
Q
gs
- 0.1 0.15 nC
Q
gd
- 0.52 0.8 nC
t
D(on)
- 4 12 ns
t
r
- 5.2 8 ns
t
D(off)
-
12.5
19
ns
Static Drain-Source On-Resistance V
GS
=10V, I
D
=0.016A
Reverse Transfer Capacitance V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=300V, I
D
=0.01A,
R
G
=6
Ω
R
DS(ON)
Static Drain-Source On-Resistance V
GS
=4.5V, I
D
=0.016A
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS Parameter Conditions
BV
DSS
µA
V
Zero Gate Voltage Drain Current ID=250µA, VGS=0V
V
DS
=0V, V
GS
=±20V
Drain-Source Breakdown Voltage I
D
=250µA, V
GS
=0V, T
J
=25°C
I
D
=250µA, V
GS
=0V, T
J
=150°C
I
DSS
Zero Gate Voltage Drain Current V
DS
=600V, V
GS
=0V
Gate Drain Charge
V
DS
=5V,
I
D
=8µA
V
DS
=480V, T
J
=125°C
I
S
=0.016A,V
GS
=0V
V
DS
=40V, I
D
=0.016A
Forward Transconductance
DYNAMIC PARAMETERS
Diode Forward Voltage
Gate resistance V
GS
=0V, V
DS
=0V, f=1MHz
Total Gate Charge V
GS
=10V, V
DS
=400V, I
D
=0.01A
Gate Source Charge
Maximum Body-Diode Pulsed Current
Input Capacitance
Output Capacitance
Turn-On DelayTime
t
D(off)
-
12.5
19
ns
t
f
- 55 82.5 ns
t
rr
- 105 160 ns
Q
rr
- 9.5 14.3 nC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
I
F
=0.016A,dI/dt=100A/µs,V
DS
=300V
Turn-Off DelayTime
R
G
=6
Ω
Turn-Off Fall Time
Body Diode Reverse Recovery Charge I
F
=0.016A,dI/dt=100A/µs,V
DS
=300V
Body Diode Reverse Recovery Time
A: The value of RθJA is measured with the device mounted on 1in 2FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in
any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve
provides a single pulse rating.
F. The current rating is based on the t ≤10s thermal resistance rating.
Rev1: April 2012 www.aosmd.com Page 2 of 5
AO3160
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0246810
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=3.5
4V
10V
4.5V
5V
0
0.005
0.01
0.015
0.02
0.025
0 1 2 3 4 5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
V
DS
=40V
25°C
0
200
400
600
800
0 0.01 0.02 0.03 0.04
RDS(ON) (Ω
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
VGS=10V
VGS=4.5V
0.5
1
1.5
2
2.5
25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=10V
ID=0.016A
VGS=4.5V
ID=0.016A
40
1.0E-04
1.0E-03
1.0E-02
1.0E-01
1.0E+00
0.2 0.4 0.6 0.8 1.0
IS(A)
VSD (Volts)
Figure 6: Body-Diode Characteristics
25°C
125°C
ID=30A
25
°
125
°
0
0.005
0.01
0.015
0.02
0.025
0.03
0.035
0.04
0246810
ID(A)
VDS (Volts)
Fig 1: On-Region Characteristics
VGS=3.5
4V
10V
4.5V
5V
0
0.005
0.01
0.015
0.02
0.025
0 1 2 3 4 5
ID(A)
VGS(Volts)
Figure 2: Transfer Characteristics
V
DS
=40V
25°C
0
200
400
600
800
0 0.01 0.02 0.03 0.04
RDS(ON) (Ω
Ω
Ω
Ω)
ID(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
VGS=10V
VGS=4.5V
0.5
1
1.5
2
2.5
25 50 75 100 125 150 175
Normalized On-Resistance
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
VGS=10V
ID=0.016A
VGS=4.5V
ID=0.016A
0.8
0.9
1
1.1
1.2
-100 -50 0 50 100 150 200
BVDSS (Normalized)
TJ(oC)
Figure 5: Break Down vs. Junction Temperature
Rev1: April 2012 www.aosmd.com Page 3 of 5
AO3160
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
0
2
4
6
8
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
VDS=400V
ID=0.01A
0.01
0.10
1.00
10.00
100.00
0.1 1 10 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
0.0001
0.001
0.01
0.1
1
1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1s
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
10s
0
20
40
60
80
100
120
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
TJ(Max)=150°C
TA=25°C
0
2
4
6
8
10
0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts)
Qg(nC)
Figure 7: Gate-Charge Characteristics
VDS=400V
ID=0.01A
0.01
0.10
1.00
10.00
100.00
0.1 1 10 100
Capacitance (pF)
VDS (Volts)
Figure 8: Capacitance Characteristics
Ciss
Coss
C
rss
0.0001
0.001
0.01
0.1
1
1 10 100 1000
ID(Amps)
VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note E)
1s
10ms
1ms
0.1s
DC
RDS(ON)
limited
TJ(Max)=150°C
TA=25°C
100
µ
s
10s
0
20
40
60
80
100
120
0.0001 0.001 0.01 0.1 1 10
Power (W)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note E)
TJ(Max)=150°C
TA=25°C
0.001
0.01
0.1
1
10
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Zθ
θ
θ
θJC Normalized Transient
Thermal Resistance
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=125°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
Single Pulse Ton T
P
D
Rev1: April 2012 www.aosmd.com Page 4 of 5
AO3160
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
-
+
VDC
L
Vgs
Vds
Id
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Vds
AR
DSS
2
E = 1/2 LI
AR
AR
-
+
VDC
Ig
Vds
DUT
-
+
VDC
Vgs
Vgs
10V
Qg
Qgs Qgd
Charge
Gate Charge Test Circuit & Waveform
-
+
VDC
DUT Vdd
Vgs
Vds
Vgs
RL
Rg
Vgs
Vds
10%
90%
Resistive Switching Test Circuit & Waveforms
t t
r
d(on)
t
on
t
d(off)
t
f
t
off
Vdd
Vgs
Id
Vgs
Rg
DUT
-
+
VDC
L
Vgs
Vds
Id
Vgs
BV
I
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
Ig
Vgs
-
+
VDC
DUT
L
Vds
Vgs
Vds
Isd
Isd
Diode Recovery Test Circuit & Waveforms
Vds -
Vds +
I
F
AR
DSS
2
E = 1/2 LI
dI/dtI
RM
rr
Vdd
Vdd
Q = - Idt
t
rr
AR
AR
Rev1: April 2012 www.aosmd.com Page 5 of 5