J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0 1
August 2012
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 /
MMBFJ112_SB51338 / MMBFJ113
N-Channel Switch
Features
• This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers.
• Sourced from Process 51.
• Source & Drain are interchangeable.
Absolute Maximum Ratings* Ta = 25 C unless otherwise noted
* These ratings are limiting value s ab ove which the serviceability of any semiconductor device may be impaired.
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle
operations.
Thermal Characteristics Ta = 25 C unless otherwise noted
* Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06".
Symbol Parameter Value Units
VDG Drain-Gate Voltage 35 V
VGS Gate-Source Voltage -35 V
IGF Forward Gate Current 50 mA
TJ, Tstg Operating and Storage Junction Temperature Range -55 to +150 C
Symbol Parameter Max. Units
J111-113 *MMBFJ111-113
PDTotal Device Dissipation
Derate above 25C625
5.0 350
2.8 mW
mW/C
RJC Thermal Resistance, Junction to Case 125 C/W
RJA Thermal Resistance, Junction to Ambient 357 556 C/W
J111 MMBFJ111
SOT-23 Mark: MMBFJ111 - 6P
D
S
J112 MMBFJ112
GSDTO-92
J113 MMBFJ112_SB51338
MMBFJ113
G
MMBFJ112 - 6R
MMBFJ112_SB51338 - 6R
MMBFJ113 - 6S
NOTE: Source & Drain
are interchangeable.
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0 2
Electrical Characteristics Ta = 25°C unless otherwise noted
* Pulse Test: Pulse Width 300s, Duty Cycle 3.0%
Typical Performance Characteristics
Symbol Parameter Test Condition Min. Typ. Max. Units
Off Characteristics
BV(BR)GSS Gate-Source Breakdown Voltage IG = -1.0A, VDS = 0 -35 V
IGSS Gate Reverse Current VGS = -15V, VDS = 0 -1.0 nA
VGS(off) Gate-Source Cutoff Voltage VDS = 5.0V, ID = 1.0A 111
112
MMBFJ112_SB51338
113
-3.0
-1.0
-3.0
-0.5
-10
-5.0
-5.0
-3.0
V
V
V
V
ID(off) Drain Cutoff Leakage Current VDS = 5.0V, VGS = -10V 1.0 nA
On Characteristics
IDSS Zero-Gate Voltage Drain
Current* VDS = 15V, IGS = 0 111
112
113
20
5.0
2.0
mA
mA
mA
rDS(on) Drain-Source On Resistance VDS 0.1V, VGS = 0 111
112
113
30
50
100
Small Signal Characteristics
Cdg(on)
Csg(on)
Drain Gate & Source Gate On
Capacitance VDS = 0, VGS = 0, f = 1.0MHz 28 pF
Cdg(off) Drain-Gate Off Capacitance VDS = 0, VGS = -10V, f = 1.0MHz 5.0 pF
Csg(off) Source-Gate Off Capacitance VDS = 0, VGS = -10V, f = 1.0MHz 5.0 pF
r - DRAIN "ON" RESISTANCE (Ω
Ω)
Parameter Interactions
0.5 1 2 5 10
5
10
20
50
100
5
10
20
50
100
V - GATE CUTOFF VOLTAGE (V)
g - TRANSCONDUCTANCE (mmhos)
GS (OFF)
fs
I , g @ V = 15V,
V = 0 PULSED
r @ 1.0 mA, V = 0
V @ V = 15V,
I = 1.0 nA
GS(off)
DSS
r
D
IDSS
DS
DS
GS
DS
DS
GS
fs
DS
DS
gfs
_
____
Common Drain-Source
0 0.4 0.8 1.2 1.6 2
0
2
4
6
8
10
V - DRAIN-SOURCE VOLTAGE (V)
I - DRAIN CURRENT (mA)
DS
D
- 0.4 V
- 1.0 V
- 0.8 V
- 0.2 V
- 0.6 V
V = 0 V
GS
T = 25°C
TYP V = - 2.0 V
GS(off)
A
- 1.2 V
- 1.4 V
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0 3
Typical Performance Characteristics (continued)
Transfer Characteristics
-3-2-10
0
10
20
30
40
V - GATE-SOURCE VOLTAGE (V)
I - DRAIN CURRENT (mA)
GS
D
V = - 3.0 V
GS(off)
25°C
V = 15 V
DS
V = - 2.0 V
GS(off)
125°C
- 55°C
25°C
- 55°C
125°C
Transfer Characteristics
-1.5-1-0.50
0
4
8
12
16
V - GATE-SOURCE VOLTAGE (V)
I - DRAIN CURRENT (mA)
GS
D
V = - 1.6 V
GS(off)
25°C
V = 15 V
DS
V = - 1.1 V
GS(off)
125°C
- 55°C
25°C
- 55°C
125°C
Transfer Characteristics
-3-2-10
0
10
20
30
V - GATE-SOURCE VOLTAGE (V)
g - TRANSCONDUCTANCE (mmhos)
GS
fs
V = - 3.0 V
GS(off)
25°C
V = 15 V
DS
V = - 2.0 V
GS(off)
125°C
- 55°C
25°C
125°C
- 55°C
Transfer Characteristics
-1.5-1-0.50
0
10
20
30
V - GATE-SOURCE VOLTAGE (V)
g - TRANSCONDUCTANCE (mmhos)
GS
fs
V = - 1.6 V
GS(off)
25°C
V = 15 V
DS
V = - 1.1 V
GS(off)
125°C
- 55°C
25°C
125°C
- 55°C
On Resistance vs Drain Current
12 51020 50100
10
20
50
100
I - DRAIN CURRENT (mA)
r - DRAIN "ON" RESISTANCE
D
DS
V
TYP = - 7.0V
GS(off)
25°C
(Ω)
125°C
25°C
125°C
r @ V = 0
GS
- 55°C
DS
V
TYP = - 2.0V
GS(off)
- 55°C
Normalized Drain Resistance
vs Bias Voltage
0 0.2 0.4 0.6 0.8 1
1
2
5
10
20
50
100
V /V - NORMALIZED GATE-SOURCE VOLTAGE (V)
r - NORMALIZED RESISTANCE
GS
DS
r =
DS
V @ 5.0V, 10 μA
GS(off)
r
DS
________
V
GS(off)
V
GS
1 -
GS(off)
( Ω ) Ω )
Ω ) Ω )
Ω )
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0 4
Typical Performance Characteristics (continued)
Output Conductance
vs Drain Current
0.01 0.1 10
0.1
1
10
100
I - DRAIN CURRENT (mA)
g - OUTPUT CONDUCTANCE ( mhos)
D
os
V = - 5.0V
GS(off)
T = 25°C
f = 1.0 kHz
V = 5.0V
DG
μ
A
10V
15V
20V
5.0V
V = - 2.0V
GS(off)
V = - 0.85V
GS(off)
10V
15V
20V 10V
15V
20V
5.0V
Transconductance
vs Drain Current
0.1 1 10
1
10
100
I - DRAIN CURRENT (mA)
g - TRANSCONDUCTANCE (mmhos)
D
fs
V = - 1.4V
GS(off)
T = 25°C
V = 15V
f = 1.0 kHz
A
DG
V = - 3.0V
GS(off)
Capacitance vs Voltage
-20-16-12-8-40
1
10
100
V - GATE-SOURCE VOLTAGE (V)
C (C ) - CAPACITANCE (pF)
rs
GS
is
C (V = 0)
is DS
C (V = 20)
is DS
C (V = 0)
rs DS
f = 0.1 - 1.0 MHz
Noise Voltage vs Frequency
0.01 1 10 100
1
5
10
50
100
f - FREQUENCY (kHz)
e - NOISE VOLTAGE (nV / Hz)
n
V = 15V
BW = 6.0 Hz @ f = 10 Hz, 100 Hz
= 0.21 @ f ≥ 1.0 kHz
DG
I = 10 mA
D
I = 1.0 mA
D
√
Noise Voltage vs Current
0.01 0.1 1 10
1
10
100
I - DRAIN CURRENT (mA)
e - NOISE VOLTAGE (nV / Hz)
n
V = 15V
DG
√
D
f = 10 Hz
f = 100 Hz
f = 1.0 kHz
f = 10 kHz
f = 100 kHz
Power Dissipation vs
Ambient Temperature
0255075100125150
0
100
200
300
400
500
600
700
TEMPERATURE ( C)
P - POWER DISSIPATION (mW)
D
o
TO-92
SOT-23
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113 — N-Channel Switch
© 2012 Fairchild Semiconductor Corporation www.fairchildsemi.com
J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113
Rev. B0 5
Typical Performance Characteristics (continued)
Switching Turn-On Time
vs Gate-Source Voltage
-10-8-6-4-20
0
5
10
15
20
25
V - GATE-SOURCE CUTOFF VOLTAGE (V)
t ,t - TURN-ON TIME (ns)
r(ON)
GS(off)
d(ON)
V = 3.0V
t APPROX. I INDEPENDENT
DD
D
r
V = 3.0V
T = 25°C
GS(off)
A
I = 6.6 mA
V = -12V
D
GS
t r (ON)
t d (ON)
2.5 mA
- 6.0V
Switching Turn-Off Time
vs Drain Current
0246810
0
20
40
60
80
100
I - DRAIN CURRENT (mA)
t ,t - TURN-OFF TIME (ns)
D
d(OFF) OFF
T = 25°C
V = 3.0V
V = -12V
t DEVICE
V INDEPENDENT
GS(off)
A
DD
GS
d(off)
V = -2.2V
GS(off)
- 4.0V
- 7.5V
td(off)
t(off)
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Rev. I61
