SN7002NE6327XT - Infineon Technologies AG

2006-11-02

Rev. 2.3 Page 1

SN7002N

SIPMOS Small-Signal-Transistor Product Summary

VDS 60 V

RDS(on) 5Ω

ID0.2 A

Feature

• N-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

PG-SOT-23

Gate

pin1

Drain

pin 3

Source

pin 2

Marking

sSN

Type Package Ordering Code Tape and Reel Information

SN7002N PG-SOT-23 Q67042-S4185 E6327: 3000 pcs/reel

SN7002N PG-SOT-23 Q67045-A5070 L6327: 3000 pcs/reel

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Value Unit

Continuous drain current

TA=25°C

TA=70°C

ID

0.2

0.16

A

Pulsed drain current

TA=25°C

ID puls 0.8

Reverse diode dv/dt

IS=0.2A, VDS=48V, di/dt=200A/µs, Tjmax=150°C

dv/dt6kV/µs

Gate source voltage VGS ±20 V

ESD Sensitivity (HBM) as per MIL-STD 883 Class 1a

Power dissipation

TA=25°C

Ptot 0.36 W

Operating and storage temperature Tj , Tstg -55... +150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

SN7002N PG-SOT-23 Q67042-S4192 L6433: 10000 pcs/reel sSN

2006-11-02

Rev. 2.3 Page 2

SN7002N

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - ambient

at minimal footprint RthJA - - 350 K/W

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=250µA

V(BR)DSS 60 - - V

Gate threshold voltage, VGS = VDS

ID=26µA

VGS(th) 0.8 1.4 1.8

Zero gate voltage drain current

VDS=60V, VGS=0, Tj=25°C

VDS=60V, VGS=0, Tj=150°C

IDSS

-

0.1

5

µA

Gate-source leakage current

VGS=20V, VDS=0

IGSS - - 10 nA

Drain-source on-state resistance

VGS=4.5V, ID=0.17A

RDS(on) -3.9 7.5 Ω

Drain-source on-state resistance

VGS=10V, ID=0.5A

RDS(on) -2.5 5

2006-11-02

Rev. 2.3 Page 3

SN7002N

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance gfs VDS≥2*ID*RDS(on)max,

ID=0.16A

0.09 0.17 -S

Input capacitance Ciss VGS=0, VDS=25V,

f=1MHz

-34 45 pF

Output capacitance Coss -7.2 9.6

Reverse transfer capacitance Crss -2.8 4.2

Turn-on delay time td(on) VDD=30V, VGS=10V,

ID=0.5A, RG=6Ω

-2.4 3.6 ns

Rise time tr-3.2 4.8

Turn-off delay time td(off) -5.3 8

Fall time t

f

-3.6 5.4

Gate Charge Characteristics

Gate to source charge Qgs VDD=48V, ID=0.5A -0.14 0.21 nC

Gate to drain charge Qgd -0.42 0.63

Gate charge total QgVDD=48V, ID=0.5A,

VGS=0 to 10V

-11.5

Gate plateau voltage V(plateau) VDD=48V, ID = 0.5 A -4.5 -V

Reverse Diode

Inverse diode continuous

forward current ISTA=25°C - - 0.2 A

Inv. diode direct current, pulsed

I

SM

- - 0.8

Inverse diode forward voltage VSD VGS=0, IF = IS-0.83 1.2 V

Reverse recovery time t

rr

VR=30V, IF=lS,

diF/dt=100A/µs

-14.2 21.3 ns

Reverse recovery charge Q

rr

-5.9 8.8 nC

2006-11-02

Rev. 2.3 Page 4

SN7002N

1 Power dissipation

Ptot = f (TA)

0 20 40 60 80 100 120 °C 160

TA

0

0.04

0.08

0.12

0.16

0.2

0.24

0.28

0.32

W

0.38 SN7002N

Ptot

2 Drain current

ID = f (TA)

parameter: VGS≥ 10 V

0 20 40 60 80 100 120 °C 160

TA

0

0.02

0.04

0.06

0.08

0.1

0.12

0.14

0.16

0.18

A

0.22 SN7002N

ID

3 Safe operating area

ID = f ( VDS )

parameter : D = 0 , TA = 25 °C

10 0 10 1 10 2

VVDS

-3

10

-2

10

-1

10

0

10

1

10

A

SN7002N

ID

R DS(on) = V DS / I D

DC

10 ms

1 ms

tp = 200.0µs

4 Transient thermal impedance

ZthJA = f (tp)

parameter : D = tp/T

10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0

s

tp

-3

10

-2

10

-1

10

0

10

1

10

2

10

3

10

K/W SN7002N

ZthJA

single pulse 0.01

0.02

0.05

0.10

0.20

D = 0.50

2006-11-02

Rev. 2.3 Page 5

SN7002N

5 Typ. output characteristic

ID = f (VDS)

parameter: Tj = 25 °C, VGS

00.5 11.5 22.5 33.5 4V5

VDS

0

0.125

0.25

0.375

0.5

0.625

0.75

A

1

ID

10V

7V

6V

5V

4.5V

4.0V

3.7V

3.5V

3.0V

6 Typ. drain-source on resistance

RDS(on) = f (ID)

parameter: Tj = 25 °C, VGS

00.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 A1

ID

0

0.75

1.5

2.25

3

3.75

4.5

5.25

6

Ω

7.5

RDS(on)

3.1V

3.5V

3.7V

4.1V

4.5V

5V

6V

7V

10V

7 Typ. transfer characteristics

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max

parameter: Tj = 25 °C

00.8 1.6 2.4 3.2 44.8 V6

VGS

0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

A

1

ID

8 Typ. forward transconductance

gfs = f(ID)

parameter: Tj = 25 °C

00.2 0.4 0.6 0.8 A1.1

ID

0

0.05

0.1

0.15

0.2

0.25

0.3

S

0.4

gfs

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Rev. 2.3 Page 6

SN7002N

9 Drain-source on-state resistance

RDS(on) = f (Tj)

parameter : ID = 0.5 A, VGS = 10 V

-60 -20 20 60 100 °C 180

Tj

0

1

2

3

4

5

6

7

8

9

10

11

12

Ω

15 SN7002N

RDS(on)

typ

98%

10 Typ. gate threshold voltage

VGS(th) = f (Tj)

parameter: VGS = VDS; ID =26µA

-60 -20 20 60 100 °C 160

Tj

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

V

2.2

VGS(th)

2%

typ.

98%

11 Typ. capacitances

C = f (VDS)

parameter: VGS=0, f=1 MHz, Tj = 25 °C

0 5 10 15 20 V30

VDS

0

10

1

10

2

10

pF

C

Ciss

Coss

Crss

12 Forward character. of reverse diode

IF = f (VSD)

parameter: T

j

00.4 0.8 1.2 1.6 22.4 V3

VSD

-3

10

-2

10

-1

10

0

10

A

SN7002N

IF

Tj = 25 °C typ

Tj = 25 °C (98%)

Tj = 150 °C typ

Tj = 150 °C (98%)

2006-11-02

Rev. 2.3 Page 7

SN7002N

13 Typ. gate charge

VGS = f (QG); parameter: VDS ,

ID = 0.2 A pulsed, Tj = 25 °C

00.4 0.8 1.2 1.6 2nC 2.8

QG

0

2

4

6

8

10

12

V

16 SN7002N

VGS

0.2 VDS max

0.5 VDS max

0.8 VDS max

14 Drain-source breakdown voltage

V(BR)DSS = f (Tj)

-60 -20 20 60 100 °C 180

Tj

54

56

58

60

62

64

66

68

V

72 SN7002N

V(BR)DSS

2006-11-02

Rev. 2.3 Page 8

SN7002N

Published by

Infineon Technologies AG,

Bereichs Kommunikation

St.-Martin-Strasse 53,

D-81541 München

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