DE475-102N21A RF Power MOSFET N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 30MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25C to 150C 1000 V VDGR TJ = 25C to 150C; RGS = 1 M 1000 V VGS Continuous 20 V VGSM Transient 30 V ID25 Tc = 25C 24 A IDM Tc = 25C, pulse width limited by TJM 144 A IAR Tc = 25C 21 A EAR Tc = 25C 30 mJ IS IDM, di/dt 100A/s, VDD VDSS, Tj 150C, RG = 0.2 5 V/ns dv/dt >200 V/ns 1800 W 730 W 4.5 W RthJC 0.08 C/W RthJHS 0.20 C/W IS = 0 PDC PDHS Tc = 25C Derate 4.0W/C above 25C PDAMB Tc = 25C Symbol Test Conditions VDSS VGS = 0 V, ID = 3 ma 1000 VGS(th) VDS = VGS, ID = 4 ma 2.5 IGSS VGS = 20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25C VGS = 0 TJ = 125C RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t 300S, duty cycle d 2% gfs VDS = 15 V, ID = 0.5ID25, pulse test TL Weight 5.5 V 100 nA 50 1 A mA 0.41 S 175 1.6mm (0.063 in) from case for 10 s = 24 A RDS(on) = 0.41 PDC = 1800W SG2 SD1 SD2 * Isolated Substrate - high isolation voltage (>2500V) - excellent thermal transfer - Increased temperature and power max. +175 -55 ID25 Features 27 TJM Tstg SG1 V -55 TJ 1000 V GATE TJ = 25C unless otherwise specified typ. = DRAIN Characteristic Values min. VDSS C C +175 C 300 C 3 g * * - - * * * cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages * Optimized for RF and high speed switching at frequencies to 30MHz * Easy to mount--no insulators needed * High power density DE475-102N21A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) min. typ. max. RG 0.3 Ciss 5500 pF 200 pF 60 pF 46 pF 5 ns 5 ns 5 ns 8 ns 160 nC 35 nC 77 nC Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 (External) Toff Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Qgd Source-Drain Diode Characteristic Values (TJ = 25C unless otherwise specified) Symbol Test Conditions min. IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle 2% Trr QRM IF = IS, -di/dt = 100A/s, VR = 100V typ. max. 21 A 144 A 1.5 V 200 ns 0.6 C 8 A IRM For detailed device mounting and installation instructions, see the "DESeries MOSFET Mounting Instructions" technical note on IXYS RF's web site at www.ixysrf.com/Technical_Support/App_notes.html IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 DE475-102N21A RF Power MOSFET 10000 Ciss Coss Capacitance in pF Crss 1000 100 10 0 100 200 300 400 500 600 700 Vds in Volts 475-102N21A Capacitances vs Vds 800 900 1000 DE475-102N21A RF Power MOSFET 102N21A DE-SERIES SPICE Model (Preliminary) The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: .SUBCKT 102N21A 10 20 30 * TERMINALS: D G S * 1000 Volt 21 Amp 0.41 ohm N-Channel Power MOSFET * REV.A 01-09-02 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 0.3 DON 6 2 D1 ROF 5 7 .1 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 5.5N RD 4 1 0.41 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0247 Rev 4 (c) 2003 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: deiinfo@directedenergy.com Web: http://www.directedenergy.com