MITB15WB1200TMH Converter - Brake - Inverter Module Low Loss Trench IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM25 = IFSM 90 A IC25 = 29 A IC25 = 29 A = 300 A VCE(sat) = 1.7 V VCE(sat) = 1.7 V Part name (Marking on product) MITB15WB1200TMH P P1 T1 D8 D10 D12 T3 D7 D5 D3 G1 NTC1 T5 D1 G3 G5 L1 L2 B L3 T6 T4 D2 NTC2 GB W V T2 T7 D9 D11 D13 U G4 G2 D6 D4 E 72873 G6 Pin configuration see outlines. N NB EU EV EW Features: Application: Package: * High level of integration - only one power semiconductor module required for the whole drive * Inverter with low loss Trench IGBTs - very low saturation voltage - positive temperature coefficient - short tail current * Epitaxial free wheeling diodes with hiperfast soft reverse recovery * Temperature sense included * AC motor drives * Pumps, Fans * Washing machines * Air-conditioning system * Inverter and power supplies * "Mini" package * Assembly height is 17 mm * Insulated base plate * Pins suitable for wave soldering and PCB mounting * Assembly clips available - IXKU 5-505 screw clamp - IXRB 5-506 click clamp * UL registered E72873 IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100906a 1-8 MITB15WB1200TMH Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage 1200 V 20 30 V V IC25 IC80 collector current TC = 25C TC = 80C 29 20 A A Ptot total power dissipation TC = 25C 100 W VCE(sat) collector emitter saturation voltage IC = 15 A; VGE = 15 V 2.2 V V VGE(th) gate emitter threshold voltage IC = 0.5 mA; VGE = VCE TVJ = 25C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ = 125C IGES gate emitter leakage current VGE = 20 V Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 15 A td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 15 A VGE = 15 V; RG = 75 W RBSOA reverse bias safe operating area VGE = 15 V; RG = 75 W; IC = 30 A; TVJ = 125C VCEK < VCES-LS*dI /dt V ISC (SCSOA) short circuit safe operating area VCE = 720 V; VGE = 15 V; TVJ = 125C RG = 75 W; tp = 10 s; non-repetitive 68 A RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) TVJ = 150C continuous transient inductive load VCE = 600 V; IC = 15 A VGE = 15 V; RG = 75 W TVJ = 25C TVJ = 125C 1.7 2.0 5 5.5 6.5 V 0.6 mA mA 150 nA 0.8 TVJ = 25C TVJ = 125C 1100 pF 92 nC 55 30 320 200 1.2 1.3 ns ns ns ns mJ mJ 60 35 360 340 2 1.7 ns ns ns ns mJ mJ 1.2 K/W K/W max. Unit 0.4 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions min. typ. VRRM max. repetitve reverse voltage TVJ = 150C 1200 V IF25 IF80 forward current TC = 25C TC = 80C 24 16 A A VF forward voltage IF = 15 A; VGE = 0 V 2.7 V V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -420 A/s IF = 15 A; VGE = 0 V RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink TVJ = 25C TVJ = 125C 2.3 1.9 TVJ = 125C 2.3 19.6 330 0.68 (per diode) C A ns mJ 1.6 0.55 K/W K/W TC = 25C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 20100906a 2-8 MITB15WB1200TMH Brake T7 Ratings Symbol Definitions Conditions min. typ. max. Unit VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage 1200 V 20 30 V V IC25 IC80 collector current TC = 25C TC = 80C 29 20 A A Ptot total power dissipation TC = 25C 100 W VCE(sat) collector emitter saturation voltage IC = 15 A; VGE = 15 V 2.2 V V VGE(th) gate emitter threshold voltage IC = 0.5 mA; VGE = VCE TVJ = 25C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ = 125C IGES gate emitter leakage current VGE = 20 V Cies input capacitance VCE = 25 V; VGE = 0 V; f = 1 MHz QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 15 A td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 15 A VGE = 15 V; RG = 75 W RBSOA reverse bias safe operating area VGE = 15 V; RG = 75 W; IC = 30 A; TVJ = 125C VCEK < VCES-LS*dI /dt V ISC (SCSOA) short circuit safe operating area VCE = 720 V; VGE = 15 V; TVJ = 125C RG = 75 W; tp = 10 s; non-repetitive 68 A RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink (per IGBT) TVJ = 150C continuous transient inductive load VCE = 600 V; IC = 15 A VGE = 15 V; RG = 75 W TVJ = 25C TVJ = 125C 1.7 2.0 5 5.5 6.5 V 0.6 mA mA 150 nA 0.8 TVJ = 25C TVJ = 125C 1100 pF 92 nC 55 30 320 200 1.0 1.3 ns ns ns ns mJ mJ 60 35 360 340 1.6 1.7 ns ns ns ns mJ mJ 1.2 0.4 K/W K/W Brake Chopper D7 Ratings typ. max. Unit TVJ = 150C 1200 V TC = 25C TC = 80C 15 10 A A 3.3 V V 0.1 0.2 mA mA tbd tbd tbd tbd C A ns J Symbol Definitions Conditions VRRM max. repetitive reverse voltage IF25 IF80 forward current VF forward voltage IF = 15 A; VGE = 0 V TVJ = 25C TVJ = 125C 3.0 2.4 IR reverse current VR = VRRM TVJ = 25C TVJ = 125C Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink VR = 600 V diF /dt = tbd A/s IF = 10 A; VGE = 0 V TVJ = 125C (per diode) IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved min. 2.5 0.85 K/W K/W TC = 25C unless otherwise stated 20100906a 3-8 MITB15WB1200TMH Input Rectifier Bridge D8 - D11 Symbol Definitions Conditions min. Ratings typ. max. Unit VRRM max. repetitive reverse voltage TVJ = 25C 1600 V IFAV IDAVM average forward current max. average DC output current sine 180 rect.; d = 1/3 TC = 80C TC = 80C 22 61 A A IFSM max. forward surge current t = 10 ms; sine 50 Hz TVJ = 25C TVJ = 125C 300 tbd A A I2t I2t value for fusing t = 10 ms; sine 50 Hz TVJ = 25C TVJ = 125C 450 tbd A2s A2s Ptot total power dissipation VF forward voltage IF = 30 A TVJ = 25C TVJ = 125C 1.35 1.35 IR reverse current VR = VRRM TVJ = 25C TVJ = 125C 0.3 RthJC RthCH thermal resistance junction to case thermal resistance case to heatsink TC = 25C (per diode) (per diode) 50 W 1.6 V V 0.01 mA mA 2.1 K/W K/W 0.7 Temperature Sensor NTC Symbol Definitions R25 B25/50 resistance Conditions min. TC = 25C 4.75 Ratings typ. max. 5.0 3375 5.25 Unit kW K Module Symbol Definitions TVJ TVJM Tstg operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index FC mounting force dS dA creep distance on surface strike distance through air Conditions min. Ratings typ. max. Unit 125 150 125 C C C 2500 V~ -40 -40 IISOL < 1 mA; 50/60 Hz 40 80 12.7 12 Weight N mm mm 35 g Equivalent Circuits for Simulation I V0 R0 Definitions Conditions V0 R0 rectifier diode D8 - D13 TVJ = 125C 0.9 16 V mW V0 R0 IGBT T1 - T6 TVJ = 125C 1.0 67 V mW V0 R0 free wheeling diode D1 - D6 TVJ = 125C 1.15 50 V mW V0 R0 IGBT T7 TVJ = 125C 1.0 67 V mW V0 R0 free wheeling diode D7 TVJ = 125C 1.6 53 V mW IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved min. Ratings typ. max. Symbol TC = 25C unless otherwise stated Unit 20100906a 4-8 MITB15WB1200TMH Circuit Diagram P P1 T1 D8 D10 D12 T3 D7 G1 NTC1 T5 D1 D5 D3 G3 G5 L1 L2 B L3 T6 T4 D2 NTC2 GB EU G6 EV Outline Drawing Dimensions in mm (1 mm = 0.0394") 48,26 44,45 35,56 31,75 27,94 26,37 12 0,5 8,15 0,35 A 20,5 0,50 EW 14 O4 17 0,35 D6 D4 G4 G2 NB N W V T2 T7 D9 D11 D13 U 55,9 40,6 2,2 1,2 A (2:1) 0,635 P1 G1 U G3 V G5 W NB GB B EW G6 EV G4 EU P G2 NTC1 L1 O 0.4 L2 L3 N 1,4 1,8 3,6 Pin positions with tolerance 17,78 10,16 8,89 6,35 2,54 31,75 22,86 19,05 45,6 39,6 23 26,6 24,13 20,32 16,51 8,89 12,4 25,6 12 NTC2 Product Marking Part number M I T A 10 WB 1200 T MH Ordering Part Name Marking on Product Standard MITB 15 WB 1200 TMH MITB15WB1200TMH IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved = Module = IGBT = Trench = Gen3 / low loss = Current Rating [A] = 6-Pack + 3~ Rectifier Bridge & Brake Unit = Reverse Voltage [V] = NTC = MiniPack2 Delivering Mode Base Qty Ordering Code Box 20 502893 20100906a 5-8 MITB15WB1200TMH 30 30 25 C Vge= 19V 125 C Vge= 17V 25 Vge= 15V 25 Vge= 13V Vge= 11V Vge= 9V 20 Ic [A] Ic [A] 20 15 15 10 10 5 5 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.0 0.5 1.0 1.5 Vce [V] 2.5 3.0 3.5 4.0 4.5 5.0 Vce [V] Typical output characteristics, VGE = 15 V Typical output characteristics (125C) 30 30 25 C 25 C 125 C 125 C 25 25 20 20 If [A] Ic [A] 2.0 15 15 10 10 5 5 0 0 5 6 7 8 9 10 11 12 Vge [V] Typical transfer characteristics IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 0.0 0.5 1.0 1.5 2.0 2.5 3.0 Vf [V] Typical forward characteristics of freewheeling diode 20100906a 6-8 MITB15WB1200TMH 6 17 Ic = 15A Vce = 600V 16 15 Eon Eoff Erec 5 14 Vce = 600V Vge = +/-15V Rg = 75W Tvj = 125C 13 12 4 11 E [mJ] Vge [[V] 10 9 8 3 7 6 2 5 4 3 1 2 1 0 0 10 20 30 40 50 60 70 80 90 100 110 120 0 5 10 Qg [nC] Typical turn on gate charge 20 25 30 600 560W Eon 8 If = 15A Vce = 600V Vge = +/-15V Tvj = 125C Eoff 25 Erec 7 Ic, If = 15A Vce = 600V Vge = +/-15V Tvj = 125C 6 30 Typical switching energy versus collector current 9 270W 550 75W 20 500 Irr 5 trr Irr [A] E [mJ] 15 Ic, If [A] 15 4 450 trr [ns] 0 270W 3 10 400 560W 2 5 75W 1 0 0 100 200 300 400 500 600 Rg [W ] Typical switching energy versus gate resistance IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 0 100 150 200 250 300 350 400 350 300 450 dif/dt [A/s] Typical turn-off characteristics of free wheeling diode 20100906a 7-8 MITB15WB1200TMH 4 30 Vce = 600V Vge = +/-15V Rg = 75W Tvj = 125C 3.5 25 C 125 C 25 3 20 If [A] Qrr [C] 2.5 2 1.5 15 10 1 5 0.5 0 0 0 5 10 15 20 25 30 0.0 35 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 Vf [V] If [A] Typical turn-off characteristics of free wheeling diode Typical forward characteristics of brake diode 100000 60 25 C 55 125 C 50 45 10000 40 Rnom [ W ] If [A] 35 30 25 1000 20 15 10 5 0 100 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 Vf [V] Typical forward characteristics per rectifier IXYS reserves the right to change limits, test conditions and dimensions. (c) 2010 IXYS All rights reserved 0 25 50 75 100 125 150 T [C] Typical thermistor resistance versus temperature 20100906a 8-8