BSM 100 GB 120 DN2K IGBT Power Module * Half-bridge * Including fast free-wheeling diodes * Package with insulated metal base plate Type VCE BSM 100 GB 120 DN2K 1200V 145A IC Package Ordering Code HALF-BRIDGE 1 C67070-A2107-A70 Maximum Ratings Parameter Symbol Collector-emitter voltage VCE Collector-gate voltage VCGR RGE = 20 k Values 1200 Unit V 1200 Gate-emitter voltage VGE DC collector current IC 20 A TC = 25 C 145 TC = 80 C 100 Pulsed collector current, tp = 1 ms ICpuls TC = 25 C 290 TC = 80 C 200 Power dissipation per IGBT W Ptot TC = 25 C 700 Chip temperature Tj + 150 Storage temperature Tstg Thermal resistance, chip case RthJC 0.18 Diode thermal resistance, chip case RthJCD 0.36 Insulation test voltage, t = 1min. Vis Creepage distance C -40 ... + 125 K/W 2500 Vac - 20 mm Clearance - 11 DIN humidity category, DIN 40 040 - F IEC climatic category, DIN IEC 68-1 - 1 sec 40 / 125 / 56 Oct-21-1997 BSM 100 GB 120 DN2K Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Gate threshold voltage V VGE(th) VGE = VCE, IC = 4 mA 4.5 5.5 6.5 VGE = 15 V, IC = 100 A, Tj = 25 C - 2.5 3 VGE = 15 V, IC = 100 A, Tj = 125 C - 3.1 3.7 Collector-emitter saturation voltage Zero gate voltage collector current VCE(sat) mA ICES VCE = 1200 V, VGE = 0 V, Tj = 25 C - 1.5 2 VCE = 1200 V, VGE = 0 V, Tj = 125 C - 6 - Gate-emitter leakage current nA IGES VGE = 20 V, VCE = 0 V - - 400 AC Characteristics Transconductance VCE = 20 V, IC = 100 A Input capacitance 54 nF - 6.5 - - 1 - - 0.5 - Coss VCE = 25 V, VGE = 0 V, f = 1 MHz Reverse transfer capacitance - Ciss VCE = 25 V, VGE = 0 V, f = 1 MHz Output capacitance S gfs Crss VCE = 25 V, VGE = 0 V, f = 1 MHz 2 Oct-21-1997 BSM 100 GB 120 DN2K Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time td(on) ns VCC = 600 V, VGE = 15 V, IC = 100 A RGon = 6.8 Rise time - 130 260 - 80 160 - 400 600 - 70 100 tr VCC = 600 V, VGE = 15 V, IC = 100 A RGon = 6.8 Turn-off delay time td(off) VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 Fall time tf VCC = 600 V, VGE = -15 V, IC = 100 A RGoff = 6.8 Free-Wheel Diode Diode forward voltage V VF IF = 100 A, VGE = 0 V, Tj = 25 C - 2.3 2.8 IF = 100 A, VGE = 0 V, Tj = 125 C - 1.8 - Reverse recovery time s trr IF = 100 A, VR = -600 V, VGE = 0 V diF/dt = -1000 A/s, Tj = 125 C Reverse recovery charge - 0.3 C Qrr IF = 100 A, VR = -600 V, VGE = 0 V diF/dt = -1000 A/s Tj = 25 C - 4 - Tj = 125 C - 14 - 3 Oct-21-1997 BSM 100 GB 120 DN2K Power dissipation Ptot = (TC) parameter: Tj 150 C Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C 10 3 750 W Ptot t = 16.0s p A 650 600 IC 550 10 2 100 s 500 450 400 10 1 1 ms 350 300 250 10 ms 10 0 200 150 DC 100 50 0 0 20 40 60 80 100 120 C 10 -1 0 10 160 10 1 10 2 10 3 TC Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C Transient thermal impedance Zth JC = (tp) parameter: D = tp / T IGBT 10 0 150 A K/W 130 IC V VCE 120 ZthJC 110 10 -1 100 90 80 10 -2 70 D = 0.50 60 0.20 0.10 50 30 0.02 single pulse 20 10 0 0 0.05 10 -3 40 20 40 60 80 100 120 C 160 TC 10 -4 -5 10 10 -4 0.01 10 -3 10 -2 10 -1 s 10 0 tp 4 Oct-21-1997 BSM 100 GB 120 DN2K Typ. output characteristics Typ. output characteristics IC = f (VCE) IC = f (VCE) parameter: tp = 80 s, Tj = 25 C parameter: tp = 80 s, Tj = 125 C 200 200 A IC 160 140 A 17V 15V 13V 11V 9V 7V IC 160 140 120 120 100 100 80 80 60 60 40 40 20 20 0 17V 15V 13V 11V 9V 7V 0 0 1 2 3 V 5 0 VCE 1 2 3 V 5 VCE Typ. transfer characteristics IC = f (VGE) parameter: tp = 80 s, VCE = 20 V 200 A IC 160 140 120 100 80 60 40 20 0 0 2 4 6 8 10 V 14 VGE 5 Oct-21-1997 BSM 100 GB 120 DN2K Typ. gate charge VGE = (QGate) parameter: IC puls = 100 A Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 20 V nF VGE 16 C 14 600 V 800 V 10 1 Ciss 12 10 8 10 0 6 Coss 4 Crss 2 0 0 100 200 300 400 500 nC 10 -1 0 700 5 10 15 20 25 30 V VCE QGate 40 Reverse biased safe operating area Short circuit safe operating area ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH 2.5 12 ICpuls/IC ICsc/IC 8 1.5 6 1.0 4 0.5 0.0 0 2 200 400 600 800 1000 1200 V 1600 VCE 6 0 0 200 400 600 800 1000 1200 V 1600 VCE Oct-21-1997 BSM 100 GB 120 DN2K Typ. switching time Typ. switching time I = f (IC) , inductive load , Tj = 125C t = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 6.8 par.: VCE = 600 V, VGE = 15 V, IC = 100 A 10 3 10 4 ns t tdoff ns t 10 3 tdoff tdon tr 10 2 tdon tr tf 10 2 tf 10 1 0 50 100 150 A 10 1 0 250 10 20 30 40 IC 60 RG Typ. switching losses Typ. switching losses E = f (IC) , inductive load , Tj = 125C E = f (RG) , inductive load , Tj = 125C par.: VCE = 600 V, VGE = 15 V, RG = 6.8 par.: VCE = 600V, VGE = 15 V, IC = 100 A 60 40 mWs Eon Eon mWs 50 E E 45 30 40 25 35 30 20 25 15 20 Eoff 15 10 10 5 5 0 0 Eoff 50 100 150 A 250 IC 7 0 0 10 20 30 40 60 RG Oct-21-1997 BSM 100 GB 120 DN2K Transient thermal impedance Zth JC = (tp) parameter: D = tp / T Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj 10 0 200 A IF Diode K/W 160 ZthJC 10 -1 140 120 Tj=125C Tj=25C 100 10 -2 D = 0.50 0.20 80 0.10 60 10 -3 40 0.05 single pulse 0.02 0.01 20 0 0.0 0.5 1.0 1.5 2.0 V 3.0 VF 10 -4 -5 10 10 -4 10 -3 10 -2 10 -1 s 10 0 tp 8 Oct-21-1997 BSM 100 GB 120 DN2K Circuit Diagram Package Outlines Dimensions in mm Weight: 250 g 9 Oct-21-1997 Nutzungsbedingungen Die in diesem Produktdatenblatt enthaltenen Daten sind ausschlielich fur technisch geschultes Fachpersonal bestimmt. Die Beurteilung der Geeignetheit dieses Produktes fur die von Ihnen anvisierte Anwendung sowie die Beurteilung der Vollstandigkeit der bereitgestellten Produktdaten fur diese Anwendung obliegt Ihnen bzw. Ihren technischen Abteilungen. In diesem Produktdatenblatt werden diejenigen Merkmale beschrieben, fur die wir eine liefervertragliche Gewahrleistung ubernehmen. Eine solche Gewahrleistung richtet sich ausschlielich nach Magabe der im jeweiligen Liefervertrag enthaltenen Bestimmungen. Garantien jeglicher Art werden fur das Produkt und dessen Eigenschaften keinesfalls ubernommen. Sollten Sie von uns Produktinformationen benotigen, die uber den Inhalt dieses Produktdatenblatts hinausgehen und insbesondere eine spezifische Verwendung und den Einsatz dieses Produktes betreffen, setzen Sie sich bitte mit dem fur Sie zustandigen Vertriebsburo in Verbindung (siehe www.eupec.com, Vertrieb&Kontakt). Fur Interessenten halten wir Application Notes bereit. 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