STS4NF100 N-channel 100 V, 0.065 typ., 4 A STripFETTM II Power MOSFET in SO-8 package Datasheet - production data Features Order code VDS RDS(on) max ID STS4NF100 100 V 0.070 4A Exceptional dv/dt capability 100 % avalanche tested Application oriented characterization 5 8 4 1 SO-8 Applications Switching applications Description Figure 1. Internal schematic diagram This Power MOSFET has been developed using STMicroelectronics' unique STripFET process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements. Table 1. Device summary Order code Marking Package Packaging STS4NF100 4NF100 SO-8 Tape and reel November 2012 This is information on a product in full production. Doc ID 8017 Rev 4 1/13 www.st.com 13 Contents STS4NF100 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 Test circuit 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 2/13 ................................................ 8 Doc ID 8017 Rev 4 STS4NF100 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage 100 V VGS Gate- source voltage 20 V ID Drain current (continuous) at TC = 25C 4 A ID Drain current (continuous) at TC = 100C 2.5 A Drain current (pulsed) 16 A Total dissipation at Tamb = 25C 2.5 W IDM (1) PTOT TJ Tstg Max. operating junction temperature C -55 to 150 Storage temperature C 1. Pulse width limited by safe operating area Table 3. Symbol Rthj-a Thermal data Parameter Thermal resistance junction-ambient max (1) Value Unit 50 C/W 1. Mounted on FR-4 board (t 10 sec.) Doc ID 8017 Rev 4 3/13 Electrical characteristics 2 STS4NF100 Electrical characteristics (TCASE=25C unless otherwise specified) Table 4. On/off states Symbol Parameter V(BR)DSS Drain-source Breakdown voltage Test conditions ID = 250 A, VGS = 0 Max. 100 Unit V 1 A VDS= 100 V, TC=125 C 10 A 100 nA 3 4 V 0.065 0.070 Zero gate voltage drain current (VGS = 0) IGSS Gate-body leakage current (VDS = 0) VGS = 20 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 A RDS(on) Static drain-source onresistance VGS = 10 V, ID = 2 A Symbol Typ. VDS = 100 V IDSS Table 5. Min. 2 Dynamic Parameter Test conditions gfs(1) Forward transconductance Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Qg Total gate charge Qgs Gate-source charge Qgd Gate-drain charge VDS > ID(on)xRDS(on)max ID= 2 A VDS = 25 V, f = 1 MHz, VGS = 0 VDD = 80 V, ID = 4 A, VGS = 10 V Min. Typ. Max. - 10 S - 870 pF - 125 pF - 52 pF - 30 - 6 nC - 10 nC Min. Typ. Max. Unit 41 Unit nC 1. Pulsed: Pulse duration = 300 s, duty cycle 1.5 . Table 6. Symbol 4/13 Switching times Parameter Test conditions td(on) tr Turn-on delay time rise time VDD=50 V, ID=4 A, RG=4.7 , VGS= 10 V (see Figure 14) - 58 45 - ns ns td(off) tf Turn-off delay time fall time VDD = 50 V, ID = 4 A RG=4.7 , VGS = 10 V (see Figure 14) - 49 17 - ns ns Doc ID 8017 Rev 4 STS4NF100 Electrical characteristics Table 7. Symbol Source drain diode Parameter Test conditions Min Typ. Max. Unit Source-drain current - 4 A ISDM (1) Source-drain current (pulsed) - 16 A VSD (2) Forward on voltage ISD = 4 A, VGS = 0 - 1.2 V Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 4 A, VDD = 30 V di/dt = 100 A/s, Tj = 150 C (see Figure 15) - ISD trr Qrr IRRM 100 375 7.5 ns nC A 1. Pulse width limited by safe operating area. 2. Pulsed: Pulse duration = 300 s, duty cycle 1.5 % Doc ID 8017 Rev 4 5/13 Electrical characteristics STS4NF100 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 5. Transfer characteristics AM15308v1 Figure 4. Output characterisics AM15309v1 Figure 6. 6/13 Transconductance AM15310v1 Figure 7. Doc ID 8017 Rev 4 Static drain-source on-resistance STS4NF100 Figure 8. Electrical characteristics Gate charge vs gate-source voltage Figure 9. Capacitance variations AM15313v1 AM15312v1 Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature AM15314v1 AM15315v1 Figure 12. Source-drain diode forward characteristics AM15316v1 Doc ID 8017 Rev 4 7/13 Test circuit 3 STS4NF100 Test circuit Figure 13. Switching times test circuit for resistive load Figure 14. Gate charge test circuit Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform 8/13 Figure 18. Switching time waveform Doc ID 8017 Rev 4 STS4NF100 4 Package mechanical data Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. Doc ID 8017 Rev 4 9/13 Package mechanical data Table 8. STS4NF100 SO-8 mechanical data mm Dim. Min. Typ. A Max. 1.75 A1 0.10 0.25 A2 1.25 b 0.31 0.51 b1 0.28 0.48 c 0.10 0.25 c1 0.10 0.23 D 4.80 4.90 5.00 E 5.80 6.00 6.20 E1 3.80 3.90 4.00 e 1.27 h 0.25 0.50 L 0.40 1.27 L1 1.04 L2 0.25 k 0 8 ccc 0.10 Figure 19. SO-8 drawing 0016023_G_FU 10/13 Doc ID 8017 Rev 4 STS4NF100 Package mechanical data Figure 20. SO-8 recommended footprint(a) Footprint_0016023_G_FU a. All dimensions are in millimeters. Doc ID 8017 Rev 4 11/13 Revision history 5 STS4NF100 Revision history Table 9. 12/13 Revision history Date Revision Changes 11-Sep-2006 1 First release 15-Nov-2006 2 The document has been reformatted 26-Jan-2007 3 Typo mistake on Table 3. 19-Nov-2012 4 Changed: marking in cover page Doc ID 8017 Rev 4 STS4NF100 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. 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