This is information on a product in full production.
November 2012 Doc ID 8017 Rev 4 1/13
13
STS4NF100
N-channel 100 V, 0.065 Ω typ., 4 A STripFET™ II
Power MOSFET in SO-8 package
Datasheet − production data
Features
■Exceptional dv/dt capability
■100 % avalanche tested
■Application oriented characterization
Applications
■Switching applications
Description
This Power MOSFET has been developed using
STMicroelectronics’ unique STripFET process,
which is specifically designed to minimize input
capacitance and gate charge. This renders the
device suitable for use as primary switch in
advanced high-efficiency isolated DC-DC
converters for telecom and computer applications,
and applications with low gate charge driving
requirements.
Figure 1. Internal schematic diagram
Order code VDS RDS(on) max ID
STS4NF100 100 V 0.070 Ω4 A
SO-8
5
8
4
1
Table 1. Device summary
Order code Marking Package Packaging
STS4NF100 4NF100 SO-8 Tape and reel
www.st.com
Contents STS4NF100
2/13 Doc ID 8017 Rev 4
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
STS4NF100 Electrical ratings
Doc ID 8017 Rev 4 3/13
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter Value Unit
VDS Drain-source voltage 100 V
VGS Gate- source voltage ±20 V
IDDrain current (continuous) at TC = 25°C 4 A
IDDrain current (continuous) at TC = 100°C 2.5 A
IDM (1)
1. Pulse width limited by safe operating area
Drain current (pulsed) 16 A
PTOT Total dissipation at Tamb = 25°C 2.5 W
TJMax. operating junction temperature -55 to 150 °C
Tstg Storage temperature °C
Table 3. Thermal data
Symbol Parameter Value Unit
Rthj-a Thermal resistance junction-ambient max (1)
1. Mounted on FR-4 board (t 10 sec.)
50 °C/W
Electrical characteristics STS4NF100
4/13 Doc ID 8017 Rev 4
2 Electrical characteristics
(TCASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V(BR)DSS
Drain-source
Breakdown voltage ID = 250 µA, VGS = 0 100 V
IDSS
Zero gate voltage
drain current (VGS = 0)
VDS = 100 V 1 µA
VDS= 100 V, TC=125 °C 10 µA
IGSS
Gate-body leakage
current (VDS = 0) VGS = ± 20 V ±100 nA
VGS(th) Gate threshold voltage VDS = VGS, ID = 250 µA 2 3 4 V
RDS(on)
Static drain-source on-
resistance VGS = 10 V, ID = 2 A 0.065 0.070 Ω
Table 5. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
gfs(1)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 .
Forward transconductance VDS > ID(on)xRDS(on)max
ID= 2 A -10 S
Ciss Input capacitance
VDS = 25 V, f = 1 MHz,
VGS = 0
- 870 pF
Coss Output capacitance - 125 pF
Crss
Reverse transfer
capacitance -52 pF
QgTotal gate charge
VDD = 80 V, ID = 4 A,
VGS = 10 V
-3041nC
Qgs Gate-source charge - 6 nC
Qgd Gate-drain charge - 10 nC
Table 6. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
td(on)
tr
Tur n -o n d el ay ti me
rise time
VDD=50 V, ID=4 A,
RG=4.7 Ω, VGS= 10 V
(see Figure 14)
-58
45 -ns
ns
td(off)
tf
Turn-off delay time
fall time
VDD = 50 V, ID = 4 A
RG=4.7 Ω, VGS = 10 V
(see Figure 14)
-49
17 -ns
ns
STS4NF100 Electrical characteristics
Doc ID 8017 Rev 4 5/13
Table 7. Source drain diode
Symbol Parameter Test conditions Min Typ. Max. Unit
ISD Source-drain current - 4 A
ISDM (1)
1. Pulse width limited by safe operating area.
Source-drain current (pulsed) - 16 A
VSD (2)
2. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Forward on voltage ISD = 4 A, VGS = 0 - 1.2 V
trr
Qrr
IRRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
ISD = 4 A, VDD = 30 V
di/dt = 100 A/µs,
Tj = 150 °C
(see Figure 15)
-
100
375
7.5
ns
nC
A
Electrical characteristics STS4NF100
6/13 Doc ID 8017 Rev 4
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area Figure 3. Thermal impedance
Figure 4. Output characterisics Figure 5. Transfer characteristics
Figure 6. Transconductance Figure 7. Static drain-source on-resistance
AM15308v1
AM15309v1
AM15310v1
STS4NF100 Electrical characteristics
Doc ID 8017 Rev 4 7/13
Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations
Figure 10. Normalized gate threshold voltage
vs temperature
Figure 11. Normalized on-resistance vs
temperature
Figure 12. Source-drain diode forward
characteristics
AM15312v1
AM15313v1
AM15314v1
AM15315v1
AM15316v1
Test circuit STS4NF100
8/13 Doc ID 8017 Rev 4
3 Test circuit
Figure 13. Switching times test circuit for
resistive load
Figure 14. Gate charge test circuit
Figure 15. Test circuit for inductive load
switching and diode recovery times
Figure 16. Unclamped Inductive load test
circuit
Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform
STS4NF100 Package mechanical data
Doc ID 8017 Rev 4 9/13
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK® packages, depending on their level of environmental compliance. ECOPACK®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK® is an ST trademark.
Package mechanical data STS4NF100
10/13 Doc ID 8017 Rev 4
Figure 19. SO-8 drawing
Table 8. SO-8 mechanical data
Dim.
mm
Min. Typ. Max.
A1.75
A1 0.10 0.25
A2 1.25
b0.31 0.51
b1 0.28 0.48
c0.10 0.25
c1 0.10 0.23
D4.804.905.00
E5.806.006.20
E1 3.80 3.90 4.00
e1.27
h0.25 0.50
L0.40 1.27
L1 1.04
L2 0.25
k0° 8°
ccc 0.10
0016023_G_FU
STS4NF100 Package mechanical data
Doc ID 8017 Rev 4 11/13
Figure 20. SO-8 recommended footprint(a)
a. All dimensions are in millimeters.
Footprint_0016023_G_FU
STS4NF100
Doc ID 8017 Rev 4 13/13
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