NOTES : 1.Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2.Thermal Resistance Junction to Ambient.
3.Reverse and Recovery Test Conditions:I
F
=0.5A,I
R
=1A,I
RR
=0.25A.
V
RMS
V
DC
V
RRM
I
(AV)
I
FSM
V
F
I
R
C
J
@T
A
=
55 C
@T
J
=125 C
1N5400G thru 1N5408G
FEATURES
Glass passivated chip
Low reverse leakage current
Low forward voltage drop
High current capability
Plastic ma terial has UL flam mability classification
94V-0
ME CHANICAL DAT A
Case : JEDEC DO -201AD molded plastic
Polarity : Color band denotes cathode
Weight : 0.04 ounces, 1.1 grams
Mounting position : Any
MAXIMUM RATINGS AND ELECTRICAL CHARACT ERISTICS
Ratings at 25
℃
am bient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
F o r capacitive lo ad, dera te c u rr e n t by 20%
1N
5400G
50
35
50
Maxim um Average Forward
Rectified Current
Peak Forward Surge Current
8.3ms single half sine-wave
super imposed on rated load (JEDEC METHOD)
Maximum Re c urrent Peak Reverse Volt age
Maximu m R MS Volta ge
Maxim um DC Blocking Voltage
Maximum f orward Voltage at 3.0A DC
Maximum DC Reve rse Current
at Rated DC Blocking Voltage
@T
J
=25 C
Typical Junction Ca pacitanc e (N ote 1 )
3.0
125
1.1
5
100
40
3us
T
J
,T
STG
Operating and Storage Tem perature Range
-55 to +150 C
Typic al Thermal Resistance (Note 2)
R
0JA
15
C/W
pF
uA
V
A
A
V
UNIT
V
V
CHARACTERISTICS SYMBOL
1N
5401G
100
70
100
1N
5402G
200
140
200
1N
5403G
300
210
300
1N
5407G
800
560
800
1N
5406G
600
420
600
1N
5405G
500
350
500
1N
5404G
400
280
400
1N
5408G
1000
700
1000
Typical Reverse Recovery Time (Note 3)
T
RR
All Dimensions in millimete r
Max.
Mi n.
DO-201AD
Dim.
A
D
C
B 25.4 9.5 0
-
7.30
1.20
4.80 5.30
1.3 0
DO-201AD
A
C
D
A
B
GLA S S PASS IVA T ED RECTIFIERS
REVERSE VOLTAGE -
50
to
1000
Volts
FORWARD CURRENT -
3. 0
Amperes
SEMICONDUCTOR
LITE-ON
REV. 2, 01-Dec-2000, KDDF01