Semiconductor Components Industries, LLC, 2002
February, 2002 – Rev. 1 1Publication Order Number:
BZX85C3V3RL/D
BZX85C3V3RL Series
1 Watt DO-41 Hermetically
Sealed Glass Zener Voltage
Regulators
This is a complete series of 1 Watt Zener diodes with limits and
excellent operating characteristics that reflect the superior capabilities
of silicon–oxide passivated junctions. All this in an axial–lead
hermetically sealed glass package that offers protection in all common
environmental conditions.
Specification Features:
•Zener Voltage Range – 3.3 V to 85 V
•ESD Rating of Class 3 (>16 KV) per Human Body Model
•DO–41 (DO–204AL) Package
•Double Slug Type Construction
•Metallurgical Bonded Construction
•Oxide Passivated Die
Mechanical Characteristics:
CASE: Double slug type, hermetically sealed glass
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES:
230°C, 1/16″ from the case for 10 seconds
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
MAXIMUM RATINGS
Rating Symbol Value Unit
Max. Steady State Power Dissipation
@ TL ≤ 50°C, Lead Length = 3/8″
Derate above 50°C
PD1
6.67
W
mW/°C
Operating and Storage
Temperature Range TJ, Tstg –65 to
+200 °CDevice Package Shipping
ORDERING INFORMATION
BZX85CxxxRL Axial Lead 6000/Tape & Reel
BZX85CxxxRL2 Axial Lead
AXIAL LEAD
CASE 59
GLASS
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6000/Tape & Reel
Cathode Anode
* The “2” suffix refers to 26 mm tape spacing.
L
BZX
85C
xxx
YWW
L = Assembly Location
BZX85Cxxx= Device Code
= (See Table Next Page)
Y = Year
WW = Work Week
MARKING DIAGRAM
Zener Voltage Regulator
IF
V
I
IR
IZT
VR
VZVF
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless
otherwise noted, VF = 1.2 V Max., IF = 200 mA for all types)
Symbol Parameter
VZReverse Zener Voltage @ IZT
IZT Reverse Current
ZZT Maximum Zener Impedance @ IZT
IZK Reverse Current
ZZK Maximum Zener Impedance @ IZK
IRReverse Leakage Current @ VR
VRBreakdown Voltage
IFForward Current
VFForward Voltage @ IF
IRSurge Current @ TA = 25°C
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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted, VF = 1.2 V Max., IF = 200 mA for all types)
Zener Voltage (Notes 2 and 3) Zener Impedance (Note 4) Leakage Current
IR
Device
Device
VZ (Volts) @ IZT ZZT @ IZT ZZK @ IZK IR @ VR
I
R
(Note 5)
D
ev
i
ce
(Note 1)
D
ev
i
ce
Marking Min Nom Max mA mA µA Max Volts mA
BZX85C3V3RL BZX85C3V3 3.1 3.3 3.5 80 20 400 1 1 60 1380
BZX85C3V6RL BZX85C3V6 3.4 3.6 3.8 60 15 500 1 1 30 1260
BZX85C3V9RL BZX85C3V9 3.7 3.9 4.1 60 15 500 1 1 5 1190
BZX85C4V3RL BZX85C4V3 4.0 4.3 4.6 50 13 500 1 1 3 1070
BZX85C4V7RL BZX85C4V7 4.4 4.7 5.0 45 13 600 1 1.5 3 970
BZX85C5V1RL BZX85C5V1 4.8 5.1 5.4 45 10 500 1 2 1 890
BZX85C5V6RL BZX85C5V6 5.2 5.6 6.0 45 7 400 1 2 1 810
BZX85C6V2RL BZX85C6V2 5.8 6.2 6.6 35 4 300 1 3 1 730
BZX85C6V8RL BZX85C6V8 6.4 6.8 7.2 35 3.5 300 1 4 1 660
BZX85C7V5RL BZX85C7V5 7.0 7.45 7.9 35 3 200 0.5 4.5 1 605
BZX85C8V2RL BZX85C8V2 7.7 8.2 8.7 25 5 200 0.5 5 1 550
BZX85C9V1RL BZX85C9V1 8.5 9.05 9.6 25 5 200 0.5 6.5 1 500
BZX85C10RL BZX85C10 9.4 10 10.6 25 7 200 0.5 7 0.5 454
BZX85C12RL BZX85C12 11.4 12.05 12.7 20 9 350 0.5 8.4 0.5 380
BZX85C13RL BZX85C13 12.4 13.25 14.1 20 10 400 0.5 9.1 0.5 344
BZX85C15RL BZX85C15 13.8 14.7 15.6 15 15 500 0.5 10.5 0.5 304
BZX85C16RL BZX85C16 15.3 16.2 17.1 15 15 500 0.5 11 0.5 285
BZX85C18RL BZX85C18 16.8 17.95 19.1 15 20 500 0.5 12.5 0.5 250
BZX85C22RL BZX85C22 20.8 22.05 23.3 10 25 600 0.5 15.5 0.5 205
BZX85C24RL BZX85C24 22.8 24.2 25.6 10 25 600 0.5 17 0.5 190
BZX85C27RL BZX85C27 25.1 27 28.9 8 30 750 0.25 19 0.5 170
BZX85C30RL BZX85C30 28 30 32 8 30 1000 0.25 21 0.5 150
BZX85C33RL BZX85C33 31 33 35 8 35 1000 0.25 23 0.5 135
BZX85C36RL BZX85C36 34 36 38 8 40 1000 0.25 25 0.5 125
BZX85C43RL BZX85C43 40 43 46 6 50 1000 0.25 30 0.5 110
BZX85C47RL BZX85C47 44 47 50 4 90 1500 0.25 33 0.5 95
BZX85C62RL BZX85C62 58 62 66 4 125 2000 0.25 43 0.5 70
BZX85C75RL BZX85C75 70 75 80 4 150 2000 0.25 51 0.5 60
BZX85C82RL BZX85C82 77 82 87 2.7 200 3000 0.25 56 0.5 55
1. TOLERANCE AND TYPE NUMBER DESIGNATION
The type numbers listed have zener voltage min/max limits as shown and have a standard tolerance on the nominal zener voltage of ±5%.
2. AVAILABILITY OF SPECIAL DIODES
For detailed information on price, availability and delivery of nominal zener voltages between the voltages shown and tighter voltage
tolerances, contact your nearest ON Semiconductor representative.
3. ZENER VOLTAGE (VZ) MEASUREMENT
VZ measured after the test current has been applied to 40 ±10 msec, while maintaining the lead temperature (TL) at 30°C ±1°C, 3/8″ from
the diode body.
4. ZENER IMPEDANCE (ZZ) DERIVATION
The zener impedance is derived from 1 kHz cycle AC voltage, which results when an AC current having an rms value equal to 10% of the
DC zener current (IZT or IZK) is superimposed on IZT or IZK.
5. SURGE CURRENT (IR) NON–REPETITIVE
The rating listed in the electrical characteristics table is maximum peak, non–repetitive, reverse surge current of 1/2 square wave or eqivalent
sine wave pulse of 1/120 second duration superimposed on the test current, IZT. However, actual device capability is as described in Figure
5 of the General Data – DO–41 Glass.
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Figure 1. Power Temperature Derating Curve
TL, LEAD TEMPERATURE (°C)
0 20 40 60 20080 100 120 140 160 180
0.25
0.5
0.75
1
1.25
L = LEAD LENGTH
TO HEAT SINK
L = 3/8″
L = 1/8″
L = 1″
PD, STEADY STATE POWER DISSIPATION (WATTS)
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Figure 2. Temperature Coefficients
(–55°C to +150°C temperature range; 90% of the units are in the ranges indicated.)
a. Range for Units to 12 Volts b. Range for Units to 12 to 100 Volts
+12
+10
+8
+6
+4
+2
0
-2
-4
23456789101112
VZ, ZENER VOLTAGE (VOLTS)
θVZ, TEMPERATURE COEFFICIENT (mV/°C)
100
70
50
30
20
10
7
5
3
2
1
10 20 30 50 70 100
VZ, ZENER VOLTAGE (VOLTS)
θVZ, TEMPERATURE COEFFICIENT (mV/°C)
VZ@IZT
RANGE
RANGE VZ@IZT
Figure 3. Typical Thermal Resistance
versus Lead Length Figure 4. Effect of Zener Current
175
150
125
100
75
50
25
0
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1
L, LEAD LENGTH TO HEAT SINK (INCHES)
θJL , JUNCTIONTOLEAD THERMAL RESISTANCE (mV/°C/W)
θVZ, TEMPERATURE COEFFICIENT (mV/°C)
+6
+4
+2
0
-2
-4 34 5678
VZ, ZENER VOLTAGE (VOLTS)
VZ@IZ
TA=25°C
20mA
0.01mA
1mA
NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS
NOTE: CHANGES IN ZENER CURRENT DO NOT
NOTE: EFFECT TEMPERATURE COEFFICIENTS
Figure 5. Maximum Surge Power
100
70
50
30
20
10
7
5
3
2
1
0.01 0.02 0.05 0.1 0.2 0.5 1 2 5 10 20 50 100 200 500 1000
PW, PULSE WIDTH (ms)
This graph represents 90 percentile data points.
For worst case design characteristics, multiply surge power by 2/3.
Ppk , PEAK SURGE POWER (WATTS)
11V-100V NONREPETITIVE
3.3V-10V NONREPETITIVE
5% DUTY CYCLE
10% DUTY CYCLE
20% DUTY CYCLE
RECTANGULAR
WAVEFORM
TJ=25°C PRIOR TO
INITIAL PULSE
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VF, FORWARD VOLTAGE (VOLTS)
0.4 0.5 0.6 0.7 0.8 0.9 1 1.1
1000
500
200
100
50
20
10
5
2
1
IF, FORWARD CURRENT (mA)
MAXIMUM
150°C
75°C
0°C
25°C
Figure 6. Effect of Zener Current
on Zener Impedance Figure 7. Effect of Zener Voltage
on Zener Impedance
Figure 8. Typical Leakage Current
1000
500
200
100
50
20
10
5
2
1
0.1 0.2 0.5 1 2 5 10 20 50 100
IZ, ZENER CURRENT (mA)
ZZ, DYNAMIC IMPEDANCE (OHMS)
1000
700
500
200
100
70
50
20
10
7
5
2
1
1 2 100
VZ, ZENER VOLTAGE (V)
35710 20305070
ZZ, DYNAMIC IMPEDANCE (OHMS)
10000
7000
5000
2000
1000
700
500
200
100
70
50
20
10
7
5
2
1
0.7
0.5
0.2
0.1
0.07
0.05
0.02
0.01
0.007
0.005
0.002
0.001
IR, LEAKAGE CURRENT (µA)
3456789101112131415
VZ, NOMINAL ZENER VOLTAGE (VOLTS)
+25°C
+125°C
TYPICAL LEAKAGE CURRENT
AT 80% OF NOMINAL
BREAKDOWN VOLTAGE
TJ = 25°C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
6.2 V
27 V
VZ = 2.7 V
47 V
TJ = 25°C
iZ(rms) = 0.1 IZ(dc)
f = 60 Hz
20 mA
5 mA
IZ = 1 mA
0 V BIAS
1 V BIAS
400
300
200
100
50
20
10
8
4
1 2 5 10 20 50 100
VZ, NOMINAL VZ (VOLTS)
C, CAPACITANCE (pF)
50% OF BREAKDOWN BIAS
MINIMUM
Figure 9. Typical Capacitance versus VZ
Figure 10. Typical Forward Characteristics
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APPLICATION NOTE
Since the actual voltage available from a given zener
diode is temperature dependent, it is necessary to determine
junction temperature under any set of operating conditions
in order to calculate its value. The following procedure is
recommended:
Lead Temperature, TL, should be determined from:
TL = θLAPD + TA.
θLA is the lead-to-ambient thermal resistance (°C/W) and PD
is the power dissipation. The value for θLA will vary and
depends o n the device mounting method. θLA is generally 30
to 40°C/W for the various clips and tie points in common use
and for printed circuit board wiring.
The temperature of the lead can also be measured using a
thermocouple placed on the lead as close as possible to the
tie point. The thermal mass connected to the tie point is
normally large enough so that it will not significantly
respond to heat surges generated in the diode as a result of
pulsed operation once steady-state conditions are achieved.
Using the measured value of TL, the junction temperature
may be determined by:
∆TJL is the increase in junction temperature above the lead
temperature and may be found as follows:
TJ = TL + ∆TJL.
∆TJL = θJLPD.
θJL may be determined from Figure 3 for dc power
conditions. For worst-case design, using expected limits of
IZ, limits of PD and the extremes of TJ(∆TJ) may be
estimated. Changes in voltage, VZ, can then be found from:
∆V = θVZ ∆TJ.
θVZ, the zener voltage temperature coefficient, is found
from Figure 2.
Under high power-pulse operation, the zener voltage will
vary with time and may also be affected significantly by the
zener resistance. For best regulation, keep current
excursions as low as possible.
Surge limitations are given in Figure 5. They are lower
than would be expected by considering only junction
temperature, as current crowding effects cause temperatures
to be extremely high in small spots, resulting in device
degradation should the limits of Figure 5 be exceeded.
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OUTLINE DIMENSIONS
1 Watt DO–41 Glass
Zener Voltage Regulators – Axial Leaded
GLASS DO–41
CASE 59–10
ISSUE R
B
D
K
K
F
F
ADIM MIN MAX MIN MAX
MILLIMETERSINCHES
A4.10 5.200.161 0.205
B2.00 2.700.079 0.106
D0.71 0.860.028 0.034
F--- 1.27--- 0.050
K25.40 ---1.000 ---
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. 59-04 OBSOLETE, NEW STANDARD 59-09.
4. 59-03 OBSOLETE, NEW STANDARD 59-10.
5. ALL RULES AND NOTES ASSOCIATED WITH
JEDEC DO-41 OUTLINE SHALL APPLY
6. POLARITY DENOTED BY CATHODE BAND.
7. LEAD DIAMETER NOT CONTROLLED WITHIN F
DIMENSION.
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes
without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability,
including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be
validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others.
SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or
death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold
SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable
attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim
alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
JAPAN: ON Semiconductor, Japan Customer Focus Center
4–32–1 Nishi–Gotanda, Shinagawa–ku, Tokyo, Japan 141–0031
Phone: 81–3–5740–2700
Email: r14525@onsemi.com
ON Semiconductor Website: http://onsemi.com
For additional information, please contact your local
Sales Representative.
BZX85C3V3RL/D
Literature Fulfillment:
Literature Distribution Center for ON Semiconductor
P.O. Box 5163, Denver, Colorado 80217 USA
Phone: 303–675–2175 or 800–344–3860 Toll Free USA/Canada
Fax: 303–675–2176 or 800–344–3867 Toll Free USA/Canada
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