TLP421 TOSHIBA Photocoupler GaAs Ired & Photo-Transistor TLP421 Unit in mm Office Equipment Household Appliances Solid State Relays Switching Power Supplies Various Controllers Signal Transmission Between Different Voltage Circuits The TOSHIBA TLP421 consists of a silicone photo-transistor optically coupled to a gallium arsenide infrared emitting diode in a four lead plastic DIP (DIP4) with having high isolation voltage (AC: 5kVRMS (min)). * Collector-emitter voltage: 80V (min.) * Current transfer ratio: 50% (min.) TOSHIBA Rank GB: 100% (min.) Weight: 0.26 g * Isolation voltage: 5000Vrms (min.) * UL recognized: UL1577 * BSI approved: BS EN60065: 2002 11-5B2 Pin Configurations (top view) Approved no.8411 BS EN60950-1: 2002 Approved no.8412 * SEMKO approved: EN60065, EN60950, EN60335 1 4 2 3 Approved no.9910249/01 1 : Anode 2 : Cathode 3 : Emitter 4 : Collector 1 2007-10-01 TLP421 * Option(D4)type TUV approved: DIN EN 60747-5-2 Approved no. R9950202 Maximum operating insulation voltage: 890VPK Maximum permissible overvoltage: 8000VPK (Note): When a EN 60747-5-2 approved type is needed, please designate the "Option(D4)" Making the VDE application: DIN EN 60747-5-2 * Construction mechanical rating 7.62mm Pitch Typical Type 10.16mm Pitch TLPxxxF Type 7.0mm(min) 8.0mm(min) Clearance 7.0mm(min) 8.0mm(min) Insulation thickness 0.4mm(min) 0.4mm(min) Creepage distance Current Transfer Ratio Type TLP421 Classi- fication (*1) Current Transfer Ratio (%) (IC / IF) IF = 5mA, VCE = 5V, Ta = 25C Min Max Marking Of Classification (None) 50 600 Blank, Y, Y+, G, G+, B, B+, GB Rank Y 50 150 Y, Y+ Rank GR 100 300 G, G+ Rank BL 200 600 B, B+ Rank GB 100 600 G, G+, B, B+, GB (*1): Ex. rank GB: TLP421 (GB) (Note): Application type name for certification test, please use standard product type name, i. e. TLP421 (GB): TLP421 2 2007-10-01 TLP421 Absolute Maximum Ratings (Ta = 25C) Characteristic Symbol Rating IF 60 mA IF / C -0.7 mA / C IFP 1 A PD 100 mW PD / C -1.0 mW / C Reverse voltage VR 5 V Junction temperature Tj 125 C Collector-emitter voltage VCEO 80 V Emitter-collector voltage VECO 7 V Collector current IC 50 mA Power dissipation(single circuit) PC 150 mW PC / C -1.5 mW / C Tj 125 C Operating temperature range Topr -55~100 C Storage temperature range Tstg -55~125 C Lead soldering temperature (10s) Tsol 260 C Total package power dissipation PT 250 mW PT / C -2.5 mW / C BVS 5000 Vrms Forward current Forward current derating(Ta 39C) LED Pulse forward current (Note 2) Power dissipation Detector Power dissipation derating Power dissipation derating (Ta 25C)(single circuit) Junction temperature Total package power dissipation derating (Ta 25C) Isolation voltage (Note 3) Unit Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). (Note 2): 100s pulse, 100Hz frequency (Note 3): AC, 1 min., R.H. 60%. Apply voltage to LED pin and detector pin together. Recommended Operating Conditions Characteristic Symbol Min Typ. Max Unit Supply voltage VCC 5 24 V Forward current IF 16 25 mA Collector current IC 1 10 mA Topr -25 85 C Operating temperature Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the device. Additionally, each item is an independent guideline respectively. In developing designs using this product, please confirm specified characteristics shown in this document. 3 2007-10-01 TLP421 Individual Electrical Characteristics (Ta = 25C) Detector LED Characteristic Symbol Test Condition Min Typ. Max Unit Forward voltage VF IF = 10 mA 1.0 1.2 1.3 V Reverse current IR VR = 5 V 10 A Capacitance CT V = 0, f = 1 MHz 30 pF Collector-emitter breakdown voltage V(BR) CEO IC = 0.5 mA 80 V Emitter-collector breakdown voltage V(BR) ECO IE = 0.1 mA 7 V VCE = 24 V (ambient light below 1000 x) 0.01 (0.1) 0.1 (10) A VCE = 24 V (ambient light Ta = 85C below 1000 x) 0.6 (1) 50 (50) A V = 0, f = 1 MHz 10 pF MIn Typ. Max Unit 50 600 100 600 60 30 Collector dark current Capacitance (collector to emitter) ID(ICEO) CCE Coupled Electrical Characteristics (Ta = 25C) Characteristic Current transfer ratio Saturated CTR Collector-emitter saturation voltage Symbol IC / IF IC / IF (sat) VCE (sat) Test Condition IF = 5 mA, VCE = 5 V IF = 1 mA, VCE = 0.4 V Rank GB Rank GB % % IC = 2.4 mA, IF = 8 mA 0.4 IC = 0.2 mA, IF = 1 mA 0.2 0.4 Min Typ. Max Unit 0.8 pF Rank GB V Isolation Characteristics (Ta = 25C) Characteristic Symbol Test Condition Capacitance (input to output) CS VS = 0, f = 1 MHz Isolation resistance RS VS = 500 V AC, 1 minute Isolation voltage BVS 12 1x10 10 14 5000 AC, 1 second, in oil 10000 DC, 1 minute, in oil 10000 4 Vrms Vdc 2007-10-01 TLP421 Switching Characteristics (Ta = 25C) Characteristics Symbol Rise time tr Fall time tf Turn-on time ton Test Condition VCC = 10 V, IC = 2 mA RL = 100 Min Typ. Max 2 3 3 Turn-off time toff 3 Turn-on time tON 2 25 50 Storage time ts Turn-off time tOFF RL = 1.9 k VCC = 5 V, IF = 16 mA (Fig.1) Unit s s IF IF RL VCC ts VCE VCC 4.5V VCE tON 0.5V tOFF Fig.1 Switching time test circuit 5 2007-10-01 TLP421 PC - Ta 200 80 160 Allowable collector power dissipation PC (mW) Allowable forward current IF (mA) IF - Ta 100 60 40 20 0 -20 120 80 40 0 20 40 60 80 100 0 -20 120 0 Ambient temperature Ta () 20 40 IFP - DR 120 (mA) Forward current IF Pulse forward current IFP (mA) 100 0.01 0.1 Duty cycle ratio VF / Ta 10 1 0.1 0.4 1 0.8 0.6 1.0 1.2 Forward voltage VF DR 1.4 1.6 2.0 2.4 (V) IFP - VFP - IF 1000 Pulse width 10s Repetitive Pulse forward current IFP (mA) Forword voltage temperature coefficent VF / Ta (mV / ) 100 IF - VF 100 1000 -3.0 80 Ambient temperature Ta () 3000 10 0.001 60 -2.6 -2.2 -1.8 -1.4 -1.0 -0.6 0.1 1 Forward current 10 IF frequency=100Hz Ta = 25 100 10 1 0 100 0.4 0.8 1.2 Pulse forward voltage (mA) 6 1.6 VFP (V) 2007-10-01 TLP421 ID - Ta IC - VCE 80 (mA) 1 Collector current IC VCE=24 V 0.1 10 5 001 0.001 0.0001 0 40 20 Ambient temperature Ta 30 50 (mA) 60 30 20 15 50 10 40 IF=5mA 20 0 100 0 2 4 () 10 VCE (V) IC - IF 100 20 8 6 Collector-emitter voltage IC - VCE 30 Collector current IC 80 60 10 40 20 10 5 Collector current IC (mA) Collector dark current IC (A) 10 10 IF= 2 mA 0 0 0.2 0.4 0.6 0.8 Collector-emitter voltage 1.0 1.2 Sample A Sample B 1 VCE (V) 0.1 IC /IF - IF 1000 Current transfer ratio IC / IF (%) Ta = 25C VCE = 5V VCE = 0.4V Sample A 0.01 0.1 100 Sample 10 100 (mA) B Ta = 25C VCE = 5V VCE = 0.4V 10 3 0.1 1 Forward current IF 1 Forward current IF 10 100 (mA) 7 2007-10-01 TLP421 IC - Ta 100 VCE(sat) - Ta 0.20 IF = 5 mA IC = 1 mA 10 Collector-emitter saturation voltage VCE(sat) (V) Collector current IC (mA) 25 5 10 1 1 IF = 0.5 mA VCE = 5V 0.1 -20 20 0 40 60 Ambient temperature 80 0.16 0.12 0.08 0.04 0 -20 100 0 20 40 Ambient temperature Ta () 60 80 100 Ta () Switching Time - RL 1000 Ta = 25C IF = 16mA VCC = 5V tOFF Switching time (s) 100 tS 10 tON 1 1 10 100 Load resistance RL (k) 8 2007-10-01 TLP421 RESTRICTIONS ON PRODUCT USE 20070701-EN * The information contained herein is subject to change without notice. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his document shall be made at the customer's own risk. * The products described in this document shall not be used or embedded to any downstream products of which manufacture, use and/or sale are prohibited under any applicable laws and regulations. * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patents or other rights of TOSHIBA or the third parties. * GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break, cut, crush or dissolve chemically. * Please contact your sales representative for product-by-product details in this document regarding RoHS compatibility. Please use these products in this document in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses occurring as a result of noncompliance with applicable laws and regulations. 9 2007-10-01