TLP421
2007-10-01
1
TOSHIBA Photocoupler GaAs Ired & Photo−Transistor
TLP421
Office Equipment
Household Appliances
Solid State Relays
Switching Power Supplies
Various Controllers
Signal Transmission Between Different Voltage Circuits
The TOSHIBA TLP421 consists of a silicone photo−transistor optically
coupled to a gallium arsenide infrared emitting diode in a four lead
plastic DIP (DIP4) with having high isolation voltage
(AC: 5kVRMS (min)).
• Collector-emitter voltage: 80V (min.)
• Current transfer ratio: 50% (min.)
Rank GB: 100% (min.)
• Isolation voltage: 5000Vrms (min.)
• UL recognized: UL1577
• BSI approved: BS EN60065: 2002
Approved no.8411
BS EN60950-1: 2002
Approved no.8412
• SEMKO approved: EN60065, EN60950, EN60335
Approved no.9910249/01
Pin Configurations
(top view)
1
23
4
1 : Anode
2 : Cathode
3 : Emitter
4 : Collector
Unit in mm
TOSHIBA 11−5B2
Weight: 0.26 g
TLP421
2007-10-01
2
• Option(D4)type
TÜV approved: DIN EN 60747-5-2
Approved no. R9950202
Maximum operating insulation voltage: 890VPK
Maximum permissible overvoltage: 8000VPK
(Note): When a EN 60747-5-2 approved type is needed,
please designate the “Option(D4)”
Making the VDE application: DIN EN 60747-5-2
• Construction mechanical rating
7.62mm Pitch
Typical Type
10.16mm Pitch
TLPxxxF Type
Creepage distance 7.0mm(min) 8.0mm(min)
Clearance 7.0mm(min) 8.0mm(min)
Insulation thickness 0.4mm(min) 0.4mm(min)
Current Transfer Ratio
Current Transfer Ratio (%)
(IC / IF)
IF = 5mA, VCE = 5V, Ta = 25°C
Type
Classi−
fication
(*1) Min Max
Marking Of Classification
(None) 50 600 Blank, Y, Y+, G, G+, B, B+, GB
Rank Y 50 150 Y, Y+
Rank GR 100 300 G, G+
Rank BL 200 600 B, B+
TLP421
Rank GB 100 600 G, G+, B, B+, GB
(*1): Ex. rank GB: TLP421 (GB)
(Note): Application type name for certification test, please use standard product type name, i. e.
TLP421 (GB): TLP421
TLP421
2007-10-01
3
Absolute Maximum Ratings (Ta = 25°C)
Characteristic Symbol Rating Unit
Forward current IF 60 mA
Forward current derating(Ta ≥ 39°C) ΔIF / °C −0.7 mA / °C
Pulse forward current (Note 2) IFP 1 A
Power dissipation PD 100 mW
Power dissipation derating ΔPD / °C −1.0 mW / °C
Reverse voltage VR 5 V
LED
Junction temperature Tj 125 °C
Collector−emitter voltage VCEO 80 V
Emitter−collector voltage VECO 7 V
Collector current IC 50 mA
Power dissipation(single circuit) PC 150 mW
Power dissipation derating
(Ta ≥ 25°C)(single circuit) ΔPC / °C −1.5 mW / °C
Detector
Junction temperature Tj 125 °C
Operating temperature range Topr −55~100 °C
Storage temperature range Tstg −55~125 °C
Lead soldering temperature (10s) Tsol 260 °C
Total package power dissipation PT 250 mW
Total package power dissipation derating
(Ta ≥ 25°C) ΔPT / °C −2.5 mW / °C
Isolation voltage (Note 3) BVS 5000
Vrms
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(Note 2): 100μs pulse, 100Hz frequency
(Note 3): AC, 1 min., R.H.≤ 60%. Apply voltage to LED pin and detector pin together.
Recommended Operating Conditions
Characteristic Symbol Min Typ. Max Unit
Supply voltage VCC ― 5 24 V
Forward current IF ― 16 25 mA
Collector current IC ― 1 10 mA
Operating temperature Topr −25 ― 85 °C
Note: Recommended operating conditions are given as a design guideline to obtain expected performance of the
device. Additionally, each item is an independent guideline respectively. In developing designs using this
product, please confirm specified characteristics shown in this document.
TLP421
2007-10-01
4
Individual Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Forward voltage VF I
F = 10 mA 1.0 1.2 1.3 V
Reverse current IR V
R = 5 V ― ― 10 μA
LED
Capacitance CT V = 0, f = 1 MHz ― 30 ― pF
Collector−emitter
breakdown voltage V(BR) CEO I
C = 0.5 mA 80 ― ― V
Emitter−collector
breakdown voltage V(BR) ECO I
E = 0.1 mA 7 ― ― V
VCE = 24 V (ambient light
below 1000 ℓx) ― 0.01
(0.1)
0.1
(10) μA
Collector dark current ID(ICEO)
VCE = 24 V (ambient light
Ta = 85°C below 1000 ℓx) ― 0.6
(1)
50
(50) μA
Detector
Capacitance
(collector to emitter) CCE V = 0, f = 1 MHz ― 10 ― pF
Coupled Electrical Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition MIn Typ. Max Unit
50 ― 600
Current transfer ratio IC / IF IF = 5 mA, VCE = 5 V
Rank GB 100 ― 600
%
― 60 ―
Saturated CTR IC / IF (sat) IF = 1 mA, VCE = 0.4 V
Rank GB 30 ― ―
%
IC = 2.4 mA, IF = 8 mA ― ― 0.4
― 0.2 ―
Collector−emitter saturation
voltage VCE (sat) IC = 0.2 mA, IF = 1 mA
Rank GB ― ― 0.4
V
Isolation Characteristics (Ta = 25°C)
Characteristic Symbol Test Condition Min Typ. Max Unit
Capacitance
(input to output) CS VS = 0, f = 1 MHz ― 0.8 ― pF
Isolation resistance RS VS = 500 V 1×1012 1014 ― Ω
AC, 1 minute 5000 ― ―
AC, 1 second, in oil ― 10000 ―
Vrms
Isolation voltage BVS
DC, 1 minute, in oil ― 10000 ― Vdc
TLP421
2007-10-01
5
Switching Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Rise time tr ― 2 ―
Fall time tf ― 3 ―
Turn−on time ton ― 3 ―
Turn−off time toff
VCC = 10 V, IC = 2 mA
RL = 100Ω
― 3 ―
μs
Turn−on time tON ― 2 ―
Storage time ts ― 25 ―
Turn−off time tOFF
RL = 1.9 kΩ (Fig.1)
VCC = 5 V, IF = 16 mA
― 50 ―
μs
Fig.1 Switching time test circuit
IF
VCE
VCC
tON
4.5V
0.5V
tOFF
t
s
VCC
VCE
IF
RL
TLP421
2007-10-01
6
120
IF – Ta
Allowable forward current
I
F (mA)
Ambient temperature Ta (℃)
100
100
80
80 60
20 40 0 −20
0
60
40
20
120
PC – Ta
Allowable collector power
dissipation PC (mW)
Ambient temperature Ta (℃)
200
100
160
80 60
20 40 0 −20
0
120
80
40
Forword voltage temperature
coefficent ΔVF / ΔTa ( m V / ℃)
IFP – DR
Pulse forward current IFP (mA)
Duty cycle ratio DR
3000
0.01
0.001
10
1000
100
0.1 1
IF – VF
Forward current IF (mA)
Forward voltage VF (V)
100
0.4
1
10
0.1
0.6 0.8 1.0
1.2 1.4 1.6
0.1
−2.2
−2.6
−3.0
−0.6
−1.8
−1.4
−1.0
1 10
ΔVF / ΔTa
–
I
F
Forward current I
F
(
mA
)
100
IFP – VFP
Pulse forward current IFP (mA)
Pulse forward voltage VFP (V)
1000
0
10
100
1
0.4 0.8 1.2 1.6 2.0 2.4
Pulse width ≤ 10μs
Repetitive
frequency=100Hz
Ta = 25℃
TLP421
2007-10-01
7
30
1.0 0.8 0.4 0.6 0.2
20
10
0
0 1.2
50 10
Collector-emitter voltage VCE (V)
Collector current IC (mA)
20
5
IF= 2 mA
30
IC – VCE
40
50
10
Collector-emitter voltage VCE (V)
Collector current IC (mA)
IC – VCE
80
10 8
4 6
0 2
60
40
20
0
20 15
IF=5mA
30
IC – IF
Collector current IC (mA)
Forward current IF (mA)
100
10
0.1
1
0.1 1 10 100
Sam
p
le A
Sample B
0.01
Ta = 25°C
VCE = 5V
VCE = 0.4V
IC /IF – IF
Current transfer ratio IC / IF (%)
Forward current IF (mA)
1000
100
3
10
0.1 1 10 100
Sam
p
le A
Sample B
Ta = 25°C
VCE = 5V
VCE = 0.4V
ID – Ta
Ambient tem
p
erature Ta
(
℃
)
10
1
0.1
80
60
40
20
0
001
0.001
0.0001
10
VCE=24 V
Collector dark current IC (μA)
5
100
TLP421
2007-10-01
8
Ambient temperature Ta (℃)
Collector current IC (mA)
IC – Ta
80
60
20 40 0 −20
0.1
100
10
100
1
1
5
10
25
IF = 0.5 mA
VCE = 5V
IF = 5 mA
IC = 1 mA
Ambient temperature Ta (℃)
Collector-emitter saturation
voltage VCE(sat) (V)
VCE(sat) – Ta
100
80
60
20 40
0
−20
0.20
0.16
0.12
0.08
0.04
0
Switching Time – RL
Switching time (μs)
Load resistance RL (kΩ)
1000
100
10
1
10
tON
100
1
Ta = 25°C
IF = 16mA
VCC = 5V
t
O
FF
tS
TLP421
2007-10-01
9
RESTRICTIONS ON PRODUCT USE 20070701-EN
• The information contained herein is subject to change without notice.
• TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor
devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of
safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of
such TOSHIBA products could cause loss of human life, bodily injury or damage to property.
In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as
set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and
conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability
Handbook” etc.
• The TOSHIBA products listed in this document are intended for usage in general electronics applications
(computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances,
etc.).These TOSHIBA products are neither intended nor warranted for usage in equipment that requires
extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or
bodily injury (“Unintended Usage”). Unintended Usage include atomic energy control instruments, airplane or
spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments,
medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in his
document shall be made at the customer’s own risk.
• The products described in this document shall not be used or embedded to any downstream products of which
manufacture, use and/or sale are prohibited under any applicable laws and regulations.
• The information contained herein is presented only as a guide for the applications of our products. No
responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which
may result from its use. No license is granted by implication or otherwise under any patents or other rights of
TOSHIBA or the third parties.
• GaAs(Gallium Arsenide) is used in this product. The dust or vapor is harmful to the human body. Do not break,
cut, crush or dissolve chemically.
• Please contact your sales representative for product-by-product details in this document regarding RoHS
compatibility. Please use these products in this document in compliance with all applicable laws and regulations
that regulate the inclusion or use of controlled substances. Toshiba assumes no liability for damage or losses
occurring as a result of noncompliance with applicable laws and regulations.
