Continental Device India Limited
An IS/ISO 9002 and IECQ Certified Manufacturer
NPN SILICON HIGH SPEED SWITHCHING TRANSISTOR
LOW POWER AND HIGH SPEED SWITCHING APPLICATIONS
ABSOLUTE MAXIMUM RATINGS (T
=25ºC unless specified otherwise)
DESCRIPTION SYMBOL
Collector Emitter Voltage VCEO
Collector Base Voltage VCBO
Collector Emitter Voltage ( V
=0) VCES
Emitter Base Voltage VEBO
Collector Current Peak ICM
Power Dissipation @ Ta=25ºC PD
Operating And Storage Junction
Temperature Range
Junction to Ambient in free air Rth(j-a)
ELECTRICAL CHARACTERISTICS (T
=25ºC unless specified otherwise)
MAX
Collector Emitter Breakdown Voltage BVCEO (sus) *IC=10mA, IB=0 V
Collector Emitter Breakdown Voltage BVCES I
=10
A, V
=0 V
Collector Base Breakdown Voltage BVCBO I
=10
A, I
=0 V
Emitter Base Breakdown Voltage BVEBO I
=10
A, I
=0 V
Collector Cutoff Current ICBO VCB=20V, IE=0 Ta=150ºC 30 µA
Collector Cutoff Current ICES VCE=20V, VBE=0 0.4 µA
Base Current IBVCE=20V, VBE=0 0.4 µA
Collector Emitter Saturation Voltage VCE(sat)*IC=10mA, IB=1mA 0.20 V
IC=30mA, IB=3mA 0.25 V
IC=100mA, IB=10mA 0.5 V
IC=10mA, IB=1mA
Ta=125ºC
THERMAL RESISTANCE
Tj, Tstg -65 to +200
0.3 V
VALUE UNITTEST CONDITIONSYMBOLDESCRIPTION
625
200
VALUE
15
40
40
4.5
500
UNIT
V
V
V
V
mA
mW
ºC
ºC/W
MIN
15
40
40
4.5
B
IS/ISO 9002
Continental Device India Limited Data Sheet Page 1 of 4