MIXA40WB1200TED Converter - Brake - Inverter Module XPT IGBT Three Phase Rectifier Brake Chopper Three Phase Inverter VRRM = 1600 V VCES = 1200 V VCES = 1200 V IDAVM = 105 A IC25 = 28 A IC25 = 60 A = 320 A VCE(sat) = 1.8 V VCE(sat) = 1.8 V IFSM Part name (Marking on product) MIXA40WB1200TED 21 D11 D13 22 D15 D7 7 1 2 3 D12 D14 D16 16 D1 18 T1 15 T3 D3 17 T7 11 T2 D2 D5 T5 NTC 8 19 6 14 20 5 12 T4 D4 4 13 D6 T6 9 E 72873 10 23 Pin configuration see outlines. 24 Features: Application: Package: * Easy paralleling due to the positive temperature coefficient of the on-state voltage * Rugged XPT design (Xtreme light Punch Through) results in: - short circuit rated for 10 sec. - very low gate charge - square RBSOA @ 3x IC - low EMI * Thin wafer technology combined with the XPT design results in a competitive low VCE(sat) * SONICTM diode - fast and soft reverse recovery - low operating forward voltage * AC motor drives * Solar inverter * Medical equipment * Uninterruptible power supply * Air-conditioning systems * Welding equipment * Switched-mode and resonant-mode power supplies * "E2-Pack" standard outline * Insulated copper base plate * Soldering pins for PCB mounting * Temperature sense included IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110916e 1-8 MIXA40WB1200TED Ouput Inverter T1 - T6 Ratings Symbol Definitions Conditions min. typ. max. Unit VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage 1200 V 20 30 V V IC25 IC80 collector current TC = 25C TC = 80C 60 40 A A Ptot total power dissipation TC = 25C 195 W VCE(sat) collector emitter saturation voltage IC = 35 A; VGE = 15 V TVJ = 25C TVJ = 125C 1.8 2.1 2.1 V V VGE(th) gate emitter threshold voltage IC = 1.5 mA; VGE = VCE TVJ = 25C 6.0 6.5 V ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ = 125C 2.1 mA mA IGES gate emitter leakage current VGE = 20 V 500 nA QG(on) total gate charge VCE = 600 V; VGE = 15 V; IC = 35 A 106 nC td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 35 A VGE = 15 V; RG = 27 W TVJ = 125C 70 40 250 100 3.8 4.1 ns ns ns ns mJ mJ RBSOA reverse bias safe operating area VGE = 15 V; RG = 27 W; TVJ = 125C VCEK = 1200 V SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = 15 V; RG = 27 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) TVJ = 25C continuous transient 5.4 0.2 TVJ = 125C 105 A 10 s A 0.64 K/W 140 Output Inverter D1 - D6 Ratings Symbol Definitions Conditions VRRM max. repetitve reverse voltage IF25 IF80 forward current VF forward voltage IF = 30 A; VGE = 0 V Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = -600 A/s IF = 30 A; VGE = 0 V RthJC thermal resistance junction to case (per diode) min. typ. max. Unit TVJ = 25C 1200 V TC = 25C TC = 80C 44 29 A A 2.2 V V TVJ = 25C TVJ = 125C 1.95 1.95 TVJ = 125C 3.5 30 350 0.9 C A ns mJ 1.2 K/W TC = 25C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110916e 2-8 MIXA40WB1200TED Brake T7 Ratings Symbol Definitions Conditions min. VCES collector emitter voltage VGES VGEM max. DC gate voltage max. transient collector gate voltage IC25 IC80 collector current Ptot total power dissipation VCE(sat) collector emitter saturation voltage IC = 16 A; VGE = 15 V VGE(th) gate emitter threshold voltage IC = 0.6 mA; VGE = VCE TVJ = 25C ICES collector emitter leakage current VCE = VCES; VGE = 0 V TVJ = 25C TVJ = 125C IGES gate emitter leakage current VGE = 20 V VCE = 600 V; VGE = 15 V; IC = 15 A typ. max. Unit 1200 V 20 30 V V TC = 25C TC = 80C 28 20 A A TC = 25C 100 W 2.1 V V TVJ = 25C continuous transient TVJ = 25C TVJ = 125C QG(on) total gate charge td(on) tr td(off) tf Eon Eoff turn-on delay time current rise time turn-off delay time current fall time turn-on energy per pulse turn-off energy per pulse inductive load VCE = 600 V; IC = 15 A VGE = 15 V; RG = 56 W TVJ = 125C RBSOA reverse bias safe operating area VGE = 15 V; RG = 56 W; TVJ = 125C VCEK = 1200 V SCSOA tSC ISC short circuit safe operating area short circuit duration short circuit current VCE = 900 V; VGE = 15 V; RG = 56 W; non-repetitive RthJC thermal resistance junction to case (per IGBT) 1.8 2.1 5.4 6.0 6.5 V 0.1 mA mA 500 nA 0.1 TVJ = 125C 48 nC 70 40 250 100 1.6 1.7 ns ns ns ns mJ mJ 45 A 10 s A 1.26 K/W Ratings typ. max. Unit 60 Brake Chopper D7 Symbol Definitions Conditions min. VRRM max. repetitive reverse voltage TVJ = 25C 1200 V IF25 IF80 forward current TC = 25C TC = 80C 12 8 A A VF forward voltage IF = 10 A; VGE = 0 V TVJ = 25C TVJ = 125C 2.5 2.6 2.9 V V IR reverse current VR = VRRM TVJ = 25C TVJ = 125C 0.5 0.5 mA mA Qrr IRM trr Erec reverse recovery charge max. reverse recovery current reverse recovery time reverse recovery energy VR = 600 V diF /dt = 200 A/s IF = 5 A; VGE = 0 V 0.6 6 350 0.2 C A ns mJ RthJC thermal resistance junction to case (per diode) TVJ = 125C 3.4 K/W TC = 25C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110916e 3-8 MIXA40WB1200TED Input Rectifier Bridge D11 - D16 TVJ = 25C Ratings typ. max. 1600 Unit V sine 180 rect.; d = 1/3 TC = 80C TC = 80C 37 105 A A max. forward surge current t = 10 ms; sine 50 Hz TVJ = 25C TVJ = 125C 320 280 A A I2t I2t value for fusing t = 10 ms; sine 50 Hz TVJ = 25C TVJ = 125C 510 390 A2s A2s Ptot total power dissipation TC = 25C 114 W VF forward voltage IF = 50 A TVJ = 25C TVJ = 125C 1.34 1.34 1.7 V V IR reverse current VR = VRRM TVJ = 25C TVJ = 125C 0.02 0.2 mA mA RthJC thermal resistance junction to case 1.1 K/W min. 4.75 Ratings typ. max. 5.0 5.25 3375 Unit kW K min. -40 Ratings typ. max. 125 150 125 Unit C C C 2500 V~ Symbol VRRM Definitions max. repetitive reverse voltage IFAV IDAVM average forward current max. average DC output current IFSM Conditions min. (per diode) Temperature Sensor NTC Symbol R25 B25/50 Definitions Conditions TC = 25C resistance Module Symbol TVJ TVJM Tstg Definitions operating temperature max. virtual junction temperature storage temperature VISOL isolation voltage CTI comparative tracking index Conditions -40 IISOL < 1 mA; 50/60 Hz - Md mounting torque (M5) 3 dS dA creep distance on surface strike distance through air 6 6 Rpin-chip resistance pin to chip RthCH thermal resistance case to heatsink with heatsink compound Weight 6 Nm mm mm 5 mW 0.02 K/W 180 g Equivalent Circuits for Simulation I V0 Symbol V0 R0 R0 Ratings typ. max. 0.88 9 Unit V mW TVJ = 150C 1.1 40 V mW D1 - D6 TVJ = 150C 1.2 27 V mW IGBT T7 TVJ = 150C 1.1 86 V mW free wheeling diode D7 TVJ = 150C 1.15 170 V mW Definitions rectifier diode Conditions D8 - D13 min. TVJ = 150C V0 R0 IGBT T1 - T6 V0 R0 free wheeling diode V0 R0 V0 R0 TC = 25C unless otherwise stated IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110916e 4-8 MIXA40WB1200TED Circuit Diagram 21 D11 D13 22 D7 D15 7 1 2 3 D12 D14 D16 16 D1 18 T1 15 D3 17 T7 11 D2 T2 D5 T5 NTC 8 19 6 14 20 T3 5 12 T4 D4 4 13 D6 T6 9 10 23 24 Outline Drawing Dimensions in mm (1 mm = 0.0394") Product Marking Part number 2D Data Matrix: FOSS-ID 6 digits Batch # 6 digits M I X A 40 WB 1200 T ED XXXXXXXXXX yywwx Logo UL Part name Date Code Location Ordering Part Name Marking on Product Standard MIXA40WB1200 TED MIXA40WB1200TED IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved = Module = IGBT = XPT = Standard = Current Rating [A] = 6-Pack + 3~ Rectifier Bridge & Brake Unit = Reverse Voltage [V] = NTC = E2-Pack Delivering Mode Base Qty Ordering Code Box 6 507497 20110916e 5-8 MIXA40WB1200TED Inverter T1 - T6 70 70 VGE = 15 V 60 60 50 50 IC 40 TVJ = 25C IC 40 [A] 30 20 10 10 0 1 2 0 3 VCE [V] 11 V TVJ = 125C [A] 30 TVJ = 125C 20 0 13 V VGE = 15 V 17 V 19 V 9V 0 1 2 3 4 VCE [V] 5 Fig. 2 Typ. output characteristics Fig. 1 Typ. output characteristics 70 20 IC = 35 A VCE = 600 V 60 15 50 IC 40 VGE [A] 30 10 [V] 20 5 TVJ = 125C 10 TVJ = 25C 0 5 6 7 8 9 10 11 12 0 13 0 20 40 10 E [mJ] 80 100 120 140 Fig. 4 Typ. turn-on gate charge Fig. 3 Typ. tranfer characteristics 6 Eon RG = 27 VCE = 600 V VGE = 15 V TVJ = 125C 8 60 QG [nC] VGE [V] Eoff 6 IC = 35 A VCE = 600 V VGE = 15 V TVJ = 125C Eon 5 E [mJ] 4 Eoff 4 2 0 0 20 40 60 80 IC [A] Fig. 5 Typ. switching energy vs. collector current IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 3 20 40 60 80 RG [ ] Fig. 6 Typ. switching energy vs. gate resistance 20110916e 6-8 MIXA40WB1200TED Inverter D1 - D6 60 7 50 6 40 5 TVJ = 125C IF VR = 600 V 60 A Qrr 30 4 [A] 30 A [C] 20 3 TVJ = 125C 15 A TVJ = 25C 10 0 0.0 0.5 1.0 2 1.5 2.0 2.5 1 300 3.0 400 500 Fig. 7 Typ. Forward current versus VF 700 800 900 1000 1100 Fig. 8 Typ. reverse recov.charge Qrr vs. di/dt 70 700 TVJ = 125C 60 60 A VR = 600 V 500 30 A trr 40 TVJ = 125C 600 VR = 600 V 50 IRR 600 diF /dt [A/s] VF [V] 400 15 A [A] 30 [ns] 300 20 200 10 100 0 300 400 500 600 700 800 60 A 30 A 15 A 0 300 900 1000 1100 400 500 diF /dt [A/s] 600 700 800 900 1000 1100 diF /dt [A/s] Fig. 9 Typ. peak reverse current IRM vs. di/dt Fig. 10 Typ. recovery time trr versus di/dt 10 2.0 TVJ = 125C VR = 600 V 1.6 Diode 60 A 30 A Erec 1.2 [mJ] 0.8 15 A 1 ZthJC IGBT IGBT [K/W] Ri 0.1 400 500 600 700 800 900 1000 1100 diF /dt [A/s] Fig. 5 Typ. recovery energy Erec versus di/dt IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved ti Ri 1 0.152 0.0025 0.341 0.0025 0.4 0.0 300 FRD ti 0.01 0.001 0.01 2 0.072 0.03 0.217 0.03 3 0.308 0.03 0.348 0.03 4 0.108 0.08 0.294 0.08 0.1 1 10 tp [s] Fig. 12 Typ. transient thermal impedance 20110916e 7-8 MIXA40WB1200TED Brake T7 & D7 10 VGE = 15 V 28 24 8 20 IC [A] [A] TVJ = 125C 12 6 IF TVJ = 25C 16 4 8 TVJ = 125C 2 TVJ = 25C 4 0 0 1 2 0 0.0 3 0.5 1.0 VCE [V] 1.5 2.0 2.5 3.0 VF [V] Fig. 14 Typ. forward characteristics Fig. 13 Typ. output characteristics 100000 10 diode ZthJC IGBT 1 10000 R [] [K/W] Inverter-IGBT 1 2 3 4 0.1 0.001 0.01 Ri 0.252 0.209 0.541 0.258 0.1 ti 0.002 0.03 0.03 0.08 1000 Inverter-FRD Ri 1.005 0.856 1.494 0.045 1 ti 0.002 0.03 0.03 0.08 10 100 10 0 25 50 75 100 125 150 tP [s] TC [C] Fig. 15 Typ. transient thermal impedance Fig.16 Typ. NTC resistance vs. temperature IXYS reserves the right to change limits, test conditions and dimensions. (c) 2011 IXYS All rights reserved 20110916e 8-8