
PAGE . 2
January 05,2011-REV.00
MMBT2222A
Note 2: Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0%.
PARAMETER Symbol Test Condition MIN. TYP. MAX. Units
Collector - Emitter Breakdown Voltage V
(BR)
CEO IC=1.0mA, IB=0 40 - - V
Collector - Base Breakdown Voltage V
(BR)
CBO IC=10uA, IE=0 75 - - V
Emitter - Base Breakdown Voltage V
(BR)
EBO IE=10uA, IC=0 6.0 - - V
Base Cutoff Current I
BL
VCE=60V, VEB=3.0V - - 20 nA
Collector Cutoff Current
I
CEX
VCE=60V, VEB=3.0V - - 10 nA
I
CBO
VCE=60V, IE=0,
VCE=60V, IE=0,TJ=125
O
C--
10
10
nA
μA
Emitter Cutoff Current I
EBO
VEB=3.0V, IC=0, - - 100 nA
DC Current Gain h
FE
IC=0.1mA, VCE=10V
IC=1.0mA, VCE=10V
IC=10mA, VCE=10V
IC=10mA, VCE=10V,TJ=125
O
C
IC=150mA, VCE=10V (Note 2)
IC=150mA, VCE=1V (Note 2)
IC=500mA, VCE=10V (Note 2)
35
50
75
35
100
50
40
-
-
-
-
-
-
-
-
-
-
-
300
-
-
-
Collector - Emitter Saturation Voltage
(Note 2) V
CE(SAT)
IC=150mA, IB=15mA
IC=500mA, IB=50mA --
0.3
1.0 V
Base - Emitter Saturation Voltage
(Note 2) V
BE(SAT)
IC=150mA, IB=15mA
IC=500mA, IB=50mA
0.6
-
-
-
1.2
2.0 V
Collector - Base Capacitance C
CBO
VCB=10V, IE=0, f=1MHz - - 8.0 pF
Emitter - Base Capacitance C
EBO
VCB=0.5V, IC=0, f=1MHz - - 25 pF
Delay Time td VCC=3V,VBE=-5V,
IC=150mA,IB=15mA --10ns
Rise Time tr VCC=3V,VBE=-5V,
IC=150mA,IB=15mA --25ns
Storage Time ts VCC=30V,IC=150mA
IB1=IB2=15mA - - 225 ns
Fall Time tf VCC=30V,IC=150mA
IB1=IB2=15mA --60ns
200 W
1K W
0-2 V
1.0to100us
Duty Cycle ~ 2.0%
+16V
+30V
Fig. 1 Turn-On Time Fig. 2 Turn-Off Time
< 2ns
C * < 10pF
S
* Total shunt capacitance of test jig, connectors, and oscilloscope
Scope rise time < 4ns
0
-14 V
1.0 to 100us
Duty Cycle ~ 2.0%
+16V
< 20ns
-4V
0
1N914
+30V
200 W
1K W
C *<10pF
S
SWITCHING TIME EQUIVALENT TEST CIRCUITS