STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 N-channel 600 V, 0.108 typ., 26 A MDmesh II PlusTM low Qg Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages Datasheet - production data Features TAB 3 12 1 I 2 PAK Order codes 3 2 TO-220FP STI33N60M2 STP33N60M2 ID 26 A(1) 650 V 0.125 26 A STW33N60M2 3 2 TO-220 RDS(on) max STF33N60M2 TAB 1 VDS @ TJmax 2 3 1. Limited by maximum junction temperature. 1 TO-247 * Extremely low gate charge * Lower RDS(on) x area vs previous generation Figure 1. Internal schematic diagram , TAB * MDmeshTM II technology * Low gate input resistance * 100% avalanche tested * Zener-protected Applications * Switching applications * LCC converters, resonant converters Description AM15572v1 These devices are N-channel Power MOSFETs developed using a new generation of MDmeshTM technology: MDmesh II PlusTM low Qg. These revolutionary Power MOSFETs associate a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. They are therefore suitable for the most demanding high efficiency converters. Table 1. Device summary Order codes Marking STF33N60M2 Package TO-220FP I2PAK STI33N60M2 33N60M2 Tube STP33N60M2 TO-220 STW33N60M2 TO-247 November 2013 This is information on a product in full production. Packaging DocID024298 Rev 2 1/19 www.st.com Contents STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18 2/19 .............................................. 9 DocID024298 Rev 2 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 1 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter Unit I2PAK, TO-220 TO-220FP TO-247 VGS ID PTOT (3) dv/dt(4) (1) A (1) A 26 16 16 (1) Drain current (pulsed) 104 104 A Total dissipation at TC = 25 C 190 35 W Peak diode recovery voltage slope 15 V/ns MOSFET dv/dt ruggedness 50 V/ns VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t = 1 s; TC = 25 C) Tstg Storage temperature Tj V 26 Drain current (continuous) at TC = 100 C (2) dv/dt 25 Drain current (continuous) at TC = 25 C ID IDM Gate-source voltage 2500 - 55 to 150 V C Max. operating junction temperature 1. Limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. ISD 26 A, di/dt 400 A/s; VDS peak < V(BR)DSS, VDD= 400 V. 4. VDS 480 V Table 3. Thermal data Value Symbol Parameter TO-220FP Rthj-case Thermal resistance junction-case max Rthj-amb Thermal resistance junction-ambient max I2PAK, TO-220 3.6 Unit TO-247 0.66 62.5 C/W 50 C/W Table 4. Avalanche characteristics Symbol Parameter Value Unit IAR Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax ) 5 A EAS Single pulse avalanche energy (starting Tj=25C, ID= IAR; VDD=50) 2300 mJ DocID024298 Rev 2 3/19 19 Electrical characteristics 2 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical characteristics (TC = 25 C unless otherwise specified) Table 5. On /off states Symbol V(BR)DSS Parameter Drain-source breakdown voltage Test conditions ID = 1 mA, VGS = 0 Min. Typ. Max. Unit 600 V IDSS Zero gate voltage VDS = 600 V drain current (VGS = 0) VDS = 600 V, TC=125 C 1 100 A A IGSS Gate-body leakage current (VDS = 0) 10 A 3 4 V 0.108 0.125 Min. Typ. Max. Unit - 1781 - pF - 85 - pF - 2.5 - pF VGS = 25 V VGS(th) Gate threshold voltage VDS = VGS, ID = 250 A RDS(on) Static drain-source on-resistance 2 VGS = 10 V, ID = 13 A Table 6. Dynamic Symbol Parameter Test conditions Ciss Input capacitance Coss Output capacitance Crss Reverse transfer capacitance Coss eq.(1) Equivalent output capacitance VDS = 0 to 480 V, VGS = 0 - 135 - pF RG Intrinsic gate resistance f = 1 MHz open drain - 5.2 - Qg Total gate charge - 45.5 - nC Qgs Gate-source charge - 9.9 - nC Qgd Gate-drain charge VDD = 480 V, ID = 26 A, VGS = 10 V (see Figure 19) - 18.5 - nC VDS = 100 V, f = 1 MHz, VGS = 0 1. Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS increases from 0 to 80% VDSS Table 7. Switching times Symbol td(on) tr(v) td(off) tf(i) 4/19 Parameter Turn-on delay time Voltage rise time Turn-off-delay time Fall time Test conditions VDD = 300 V, ID = 13 A, RG = 4.7 , VGS = 10 V (see Figure 18 and Figure 23) DocID024298 Rev 2 Min. Typ. Max. Unit - 16 - ns - 9.6 - ns - 109 - ns - 9 - ns STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical characteristics Table 8. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit Source-drain current - 26 A ISDM (1) Source-drain current (pulsed) - 104 A VSD (2) Forward on voltage - 1.6 V ISD trr ISD = 26 A, VGS = 0 Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current trr Reverse recovery time Qrr Reverse recovery charge IRRM Reverse recovery current ISD = 26 A, di/dt = 100 A/s VDD = 60 V (see Figure 23) ISD = 26 A, di/dt = 100 A/s VDD = 60 V, Tj = 150 C (see Figure 23) - 375 ns - 5.6 C - 30 A - 478 ns - 7.7 C - 32.5 A 1. Pulse width limited by safe operating area. 2. Pulsed: pulse duration = 300 s, duty cycle 1.5% DocID024298 Rev 2 5/19 19 Electrical characteristics 2.1 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical characteristics (curves) Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-220FP AM17917v1 ID (A) 100 10 1 his is ea ar (on) S D xR t in a ion y m t a er d b Op mite Li 10s 100s 1ms 10ms 0.1 0.01 0.1 Tj=150C Tc=25C Single pulse 10 1 100 VDS(V) Figure 4. Safe operating area for I2PAK and TO-220 Figure 5. Thermal impedance for I2PAK and TO-220 AM17906v1 ID (A) ) on D S( O Li per m at ite io d ni by n m this ax a R rea is 100 10 10s 100s 1ms 10ms 1 Tj=150C Tc=25C Single pulse 0.1 0.1 10 1 100 VDS(V) Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedance for TO-247 AM17918v1 ID (A) ) on D S( O Li per m at ite io d ni by n m this ax a R rea is 100 10 10s 100s 1ms 10ms 1 Tj=150C Tc=25C Single pulse 0.1 0.1 6/19 1 10 100 VDS(V) DocID024298 Rev 2 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Figure 8. Output characteristics Figure 9. Transfer characteristics AM17907v1 ID (A) VGS=7, 8, 9, 10V 6V 60 Electrical characteristics AM17908v1 ID (A) VDS=17V 60 50 50 40 40 5V 30 30 20 20 10 10 4V 0 0 10 5 20 15 Figure 10. Gate charge vs gate-source voltage AM17909v1 VDS VGS (V) VDD=480V ID=26A 12 10 0 0 VDS(V) 2 4 8 6 10 VGS(V) Figure 11. Static drain-source on-resistance (V) RDS(on) () 500 0.114 400 0.112 300 0.110 200 0.108 100 0.106 AM17910v1 VGS=10V VDS 8 6 4 2 0 0 10 20 30 50 40 0 Qg(nC) Figure 12. Capacitance variations 0 5 10 15 20 25 ID(A) Figure 13. Output capacitance stored energy AM17911v1 C (pF) 0.104 AM17912v1 Eoss (J) 12 10000 Ciss 10 1000 8 6 100 Coss 4 10 2 Crss 1 0.1 1 10 100 VDS(V) DocID024298 Rev 2 0 0 100 200 300 400 500 600 VDS(V) 7/19 19 Electrical characteristics STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Figure 14. Normalized gate threshold voltage vs temperature AM17913v1 VGS(th) (norm) Figure 15. Normalized on-resistance vs temperature AM17914v1 RDS(on) (norm) ID=13A VDS=10V ID=250A 2.3 1.1 2.1 1.9 1.0 1.7 1.5 0.9 1.3 1.1 0.8 0.9 0.7 -50 0.5 -50 -25 0.7 -25 0 25 50 75 100 TJ(C) Figure 16. Normalized VDS vs temperature 0 25 50 75 100 TJ(C) Figure 17. Source-drain diode forward characteristics AM17915v1 VDS AM17916v1 VSD (V) (norm) ID=1mA 1.2 1.09 1.07 1.4 1.05 1 1.03 TJ=-50C 0.8 1.01 0.99 TJ=25C 0.6 TJ=150C 0.97 0.4 0.95 0.93 0.91 -50 8/19 0.2 -25 0 25 50 75 100 TJ(C) DocID024298 Rev 2 0 0 2 4 6 8 10 12 14 16 18 20 22 24 ISD(A) STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 3 Test circuits Test circuits Figure 18. Switching times test circuit for resistive load Figure 19. Gate charge test circuit VDD 12V 47k 1k 100nF 3.3 F 2200 RL F IG=CONST VDD VGS 100 Vi=20V=VGMAX VD RG 2200 F D.U.T. D.U.T. VG 2.7k PW 47k 1k PW AM01468v1 Figure 20. Test circuit for inductive load switching and diode recovery times A A AM01469v1 Figure 21. Unclamped inductive load test circuit L A D G D.U.T. FAST DIODE B B VD L=100H S 3.3 F B 25 1000 F D VDD 2200 F 3.3 F VDD ID G RG S Vi D.U.T. Pw AM01470v1 AM01471v1 Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform ton 9 %5 '66 tdon 9' toff tr tdoff tf 90% 90% ,'0 10% ,' 9'' 10% 0 9'' VDS 90% VGS !-V 0 DocID024298 Rev 2 10% AM01473v1 9/19 19 Package mechanical data 4 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK(R) packages, depending on their level of environmental compliance. ECOPACK(R) specifications, grade definitions and product status are available at: www.st.com. ECOPACK(R) is an ST trademark. 10/19 DocID024298 Rev 2 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package mechanical data Table 9. TO-220FP mechanical data mm Dim. Min. Typ. Max. A 4.4 4.6 B 2.5 2.7 D 2.5 2.75 E 0.45 0.7 F 0.75 1 F1 1.15 1.70 F2 1.15 1.70 G 4.95 5.2 G1 2.4 2.7 H 10 10.4 L2 16 L3 28.6 30.6 L4 9.8 10.6 L5 2.9 3.6 L6 15.9 16.4 L7 9 9.3 Dia 3 3.2 DocID024298 Rev 2 11/19 19 Package mechanical data STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Figure 24. TO-220FP drawing 7012510_Rev_K_B 12/19 DocID024298 Rev 2 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package mechanical data Table 10. IPAK (TO-262) mechanical data mm. DIM. min. typ max. A 4.40 4.60 A1 2.40 2.72 b 0.61 0.88 b1 1.14 1.70 c 0.49 0.70 c2 1.23 1.32 D 8.95 9.35 e 2.40 2.70 e1 4.95 5.15 E 10 10.40 L 13 14 L1 3.50 3.93 L2 1.27 1.40 Figure 25. IPAK (TO-262) drawing 0004982_Rev_H DocID024298 Rev 2 13/19 19 Package mechanical data STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Table 11. TO-220 type A mechanical data mm Dim. Min. Typ. A 4.40 4.60 b 0.61 0.88 b1 1.14 1.70 c 0.48 0.70 D 15.25 15.75 D1 14/19 Max. 1.27 E 10 10.40 e 2.40 2.70 e1 4.95 5.15 F 1.23 1.32 H1 6.20 6.60 J1 2.40 2.72 L 13 14 L1 3.50 3.93 L20 16.40 L30 28.90 P 3.75 3.85 Q 2.65 2.95 DocID024298 Rev 2 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package mechanical data Figure 26. TO-220 type A drawing ?TYPE!?2EV?4 DocID024298 Rev 2 15/19 19 Package mechanical data STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Table 12. TO-247 mechanical data mm. Dim. Min. Typ. A 4.85 5.15 A1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 D 19.85 20.15 E 15.45 15.75 e 5.30 L 14.20 14.80 L1 3.70 4.30 5.45 L2 16/19 Max. 5.60 18.50 P 3.55 3.65 R 4.50 5.50 S 5.30 5.50 DocID024298 Rev 2 5.70 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package mechanical data Figure 27. TO-247 drawing 0075325_G DocID024298 Rev 2 17/19 19 Revision history 5 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Revision history Table 13. Document revision history Date Revision 13-Sep-2013 1 First release. 2 - Modified: RDS(on) and ID values in cover page - Modified: values in Table 4 - Modified: RDS(on) typical and maximum values in Table 5, the entire typical values in Table 6, 7 and 8 - Added: Section 2.1: Electrical characteristics (curves) - Minor text changes 19-Nov-2013 18/19 Changes DocID024298 Rev 2 STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. 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