This is information on a product in full production.
November 2013 DocID024298 Rev 2 1/19
STF33N60M2, STI33N60M2,
STP33N60M2, STW33N60M2
N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus™ low Qg
Power MOSFETs in TO-220FP, I2PAK, TO-220 and TO-247 packages
Datasheet
-
production data
Figure 1. Internal schematic diagram
Features
•Extremely low gate charge
•Lower R
DS(on)
x area vs previous generation
•MDmesh™ II technology
•Low gate input resistance
•100% avalanche tested
•Zener-protected
Applications
•Switching applications
•LCC converters, resonant converters
Description
These devices are N-channel Power MOSFETs
developed using a new generation of MDmesh™
technology: MDmesh II Plus™ low Q
g
. These
revolutionary Power MOSFETs associate a
vertical structure to the company's strip layout to
yield one of the world's lowest on-resistance and
gate charge. They are therefore suitable for the
most demanding high efficiency converters.
TO-220
123
TAB
TO-220FP
123
TO-247
123
123
TAB
I PAK
2
AM15572v1
, TAB
Order codes V
DS
@
T
Jmax
R
DS(on)
max I
D
STF33N60M2
650 V 0.125 Ω
26 A
(1)
1. Limited b y maximum ju nction temperature.
STI33N60M2 26 ASTP33N60M2
STW33N60M2
Table 1. Device summary
Order codes Marking Package Packaging
STF33N60M2
33N60M2
TO-220FP
Tube
STI33N60M2 I
2
PAK
STP33N60M2 TO-220
STW33N60M2 TO-247
www.st.com
Contents STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
2/19 DocID024298 Rev 2
Contents
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Elect rical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
DocID024298 Rev 2 3/19
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical ratings
19
1 Electrical ratings
Table 2. Absolute maximum ratings
Symbol Parameter
Value
Unit
I
2
PAK, TO-220
TO-247 TO-220FP
V
GS
Gate-source volt ag e ± 25 V
I
D
Drain current (continuous) at T
C
= 25 °C 26 26
(1)
1. Limited by maximum junction temperature.
A
I
D
Drain current (continuous) at T
C
= 100 °C 16 16
(1)
A
I
DM (2)
2. Pulse width limited by safe operating area.
Drain current (pulsed) 104 104
(1)
A
P
TOT
Total dissipation at T
C
= 25 °C 190 35 W
dv/dt
(3)
3. I
SD
≤ 26 A, di/dt ≤ 400 A/µs; V
DS
peak
< V
(BR)DSS
, V
DD
= 400 V.
Peak diode recovery voltage slope 15 V/ns
dv/dt
(4)
4. V
DS
≤ 480 V
MOSFET dv/d t rugg edn es s 50 V/ns
V
ISO
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t = 1 s; TC = 25 °C) 2500 V
T
stg
Storage temperature - 55 to 150 °C
T
j
Max. operating junction temperature
Table 3. Thermal data
Symbol Parameter
Value
Unit
TO-220FP I
2
PAK,
TO-220 TO-247
R
thj-case
Thermal resistance juncti on -ca se ma x 3.6 0.66 °C/W
R
thj-amb
Thermal resistance junction-ambient max 62.5 50 °C/W
Table 4. Avalanche characteristics
Symbol Parameter Value Unit
I
AR
Avalanche current, repetitive or not
repeti tive (pulse width limited by T
jmax
) 5A
E
AS
Single pulse avalanche energy (starting
T
j
=25°C, I
D
= I
AR
; V
DD
=50) 2300 mJ
Electrical characteristics STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
4/19 DocID024298 Rev 2
2 Electrical characteristics
(T
C
= 25 °C unless otherwise specified)
Table 5. On /off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source
breakdown voltage I
D
= 1 mA, V
GS
= 0 600 V
I
DSS
Zero gate voltage
drain current (V
GS
= 0) V
DS
= 600 V
V
DS
= 600 V, T
C
=125 °C 1
100 µA
µA
I
GSS
Gate-body leakage
current (V
DS
= 0) V
GS
= ± 25 V ±10 µA
V
GS(th)
Gate threshold voltage V
DS
= V
GS
, I
D
= 250 µA 2 3 4 V
R
DS(on)
Static drain-source
on-resistance V
GS
= 10 V, I
D
= 13 A 0.108 0.125 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
C
iss
Input capacitance
V
DS
= 100 V, f = 1 MHz,
V
GS
= 0
- 1781 - pF
C
oss
Out put capacita nce - 85 - pF
C
rss
Reverse transfer
capacitance -2.5-pF
C
oss eq.(1)
1. C
oss eq.
is defined as a con st a nt equivale nt c apacit ance givin g th e s am e c harg ing time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Equivalent output
capacitance V
DS
= 0 to 480 V, V
GS
= 0 - 135 - pF
R
G
Intrinsic gate
resistance f = 1 MHz open drain - 5.2 - Ω
Q
g
Total gate charge V
DD
= 480 V, I
D
= 26 A,
V
GS
= 10 V
(see Figure 19)
- 45.5 - nC
Q
gs
Gate-source charge - 9.9 - nC
Q
gd
Gate-drain charge - 18.5 - nC
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d
(on) Turn-on delay time V
DD
= 300 V, I
D
= 13 A,
R
G
= 4.7 Ω, V
GS
= 10 V
(see Figure 18 and
Figure 23)
-16-ns
t
r
(v) Voltage rise time - 9.6 - ns
t
d
(off) Turn-off-delay time - 109 - ns
t
f
(i) Fall time - 9 - ns
DocID024298 Rev 2 5/19
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical characteristics
19
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
Source-drain current - 26 A
I
SDM
(1)
1. Pulse width limited by safe operating area.
Source-dra in cur rent (pulse d) - 104 A
V
SD
(2)
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Forward on voltage I
SD
= 26 A, V
GS
= 0 - 1.6 V
t
rr
Reverse recovery time I
SD
= 26 A, di/dt = 100 A/µs
V
DD
= 60 V (see Figure 23)
- 375 ns
Q
rr
Reverse recovery charge - 5.6 µC
I
RRM
Reverse recovery current - 30 A
t
rr
Reverse recovery time I
SD
= 26 A, di/dt = 100 A/µs
V
DD
= 60 V, T
j
= 150 °C
(see Figure 23)
- 478 ns
Q
rr
Reverse recovery charge - 7.7 µC
I
RRM
Revers e rec ove ry cur r ent - 32.5 A
Electrical characteristics STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
6/19 DocID024298 Rev 2
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-220FP Figure 3. Thermal impedance for TO-2 20FP
I
D
1
0.1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max R
DS(on)
10µs
100µs
1ms
10ms
0.01
Tj=150°C
Tc=25°C
Single pulse
10
100
AM17917v1
Figure 4. Safe operating area for I
2
PAK and
TO-220 Figure 5. Thermal impedance for I
2
PAK and
TO-220
Figure 6. Safe operating area for TO-247 Figure 7. Thermal impedan ce for TO-247
I
D
10
1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
100
AM17906v1
I
D
10
1
0.1 1100 V
DS
(V)
10
(A)
Operation in this area is
Limited by max RDS(on)
10µs
100µs
1ms
10ms
0.1
Tj=150°C
Tc=25°C
Single pulse
100
AM17918v1
DocID024298 Rev 2 7/19
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Electrical characteristics
19
Figure 8. Output characteristics Figure 9. Transfer characteristics
Figure 10. Gate charge vs gate-source voltage Figure 11. Static drain-source on-resistance
Figure 12. Capacitance variations Figure 13. Output capacitance stored energy
I
D
50
30
10
005V
DS
(V)
10
(A)
15
4V
5V
V
GS
=7, 8, 9, 10V
20
40
60 6V
20
AM17907v1
I
D
60
40
20
004V
GS
(V)
8
(A)
2610
10
30
50
V
DS
=17V
AM17908v1
V
GS
6
4
2
0020 Q
g
(nC)
(V)
8
30 40
10
V
DD
=480V
I
D
=26A
12
300
200
100
0
400
500
V
DS
10 50
V
DS
(V)
AM17909v1
R
DS(on)
0.108
0.106
0.104
010 I
D
(A)
(Ω)
515
0.110
V
GS
=10V
20 25
0.112
0.114
AM17910v1
C
1000
100
10
1
0.1 10 V
DS
(V)
(pF)
1100
Ciss
Coss
Crss
10000
AM17911v1
E
oss
4
2
0
0100 V
DS
(V)
(µJ)
400
200 300
6
500 600
8
10
12
AM17912v1
Electrical characteristics STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
8/19 DocID024298 Rev 2
Figure 14. Normalized gate threshold voltage vs
temperature Figure 15. Normalized on-resistance vs
temperature
Figure 16. Normali zed V
DS
vs temperature Figure 17. Source- drain diode forward
characteristics
V
GS(th)
1.0
0.9
0.8
0.7
-50 0T
J
(°C)
(norm)
-25
1.1
75
25 50 100
I
D
=250µA
AM17913v1
R
DS(on)
1.9
1.3
0.9
0.5
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.7
1.1
1.5
1.7
2.1
2.3
I
D
=13A
V
DS
=10V
AM17914v1
V
DS
-50 0T
J
(°C)
(norm)
-25 75
25 50 100
0.91
0.93
0.95
0.97
0.99
1.01
1.03
1.05
I
D
=1mA
1.07
1.09
AM17915v1
V
SD
04I
SD
(A)
(V)
210
68
0
0.2
0.4
0.6
T
J
=-50°C
T
J
=150°C
T
J
=25°C
0.8
1
12 14 16 18 20 22 24
1.2
1.4
AM17916v1
DocID024298 Rev 2 9/19
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Test circuits
19
3 Test circuits
Figure 18. Switching times test circuit for
resistive load Figure 19. Gate charge test circuit
Figure 20. Test circuit for inductive load
switching and diode recovery times Figure 21. Unclamped inductive load test circ uit
Figure 22. Unclamped inductive waveform Figure 23. Switching time waveform
AM01469v1
VDD
47kΩ1kΩ
47kΩ
2.7kΩ
1kΩ
12V
Vi=20V=VGMAX
2200
μF
PW
IG=CONST
100Ω
100nF
D.U.T.
VG
AM01471v1
Vi
Pw
VD
ID
D.U.T.
L
2200
μF
3.3
μFVDD
AM01473v1
VDS
ton
tdon tdoff
toff
tf
tr
90%
10%
10%
0
0
90%
90%
10%
VGS
Package mechanical data STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
10/19 DocID024298 Rev 2
4 Package mechanical data
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
DocID024298 Rev 2 11/19
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package mechanical data
19
Table 9. TO-220FP mechanical data
Dim. mm
Min. Typ. Max.
A4.4 4.6
B2.5 2.7
D2.5 2.75
E 0.45 0.7
F0.75 1
F1 1.15 1.70
F2 1.15 1.70
G 4.95 5.2
G1 2.4 2.7
H10 10.4
L2 16
L3 28.6 30.6
L4 9.8 10.6
L5 2.9 3.6
L6 15.9 16.4
L7 9 9.3
Dia 3 3.2
Package mechanical data STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
12/19 DocID024298 Rev 2
Figure 24. TO-220FP drawing
7012510_Rev_K_B
DocID024298 Rev 2 13/19
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package mechanical data
19
Figure 25. I²PAK (TO-262) drawing
Table 10. I²PAK (TO-262) mechanical dat a
DIM. mm.
min. typ max.
A 4.40 4.60
A1 2.40 2.72
b 0.61 0.88
b1 1.14 1.70
c 0.49 0.70
c2 1.23 1.32
D 8.95 9.35
e 2.40 2.70
e1 4.95 5.15
E10 10.40
L13 14
L1 3.50 3.93
L2 1.27 1.40
0004982_Rev_H
Package mechanical data STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
14/19 DocID024298 Rev 2
Table 11. TO-220 type A mechanical data
Dim. mm
Min. Typ. Max.
A4.40 4.60
b0.61 0.88
b1 1.14 1.70
c0.48 0.70
D 15.25 15.75
D1 1.27
E 10 10.40
e2.40 2.70
e1 4.95 5.15
F1.23 1.32
H1 6.20 6.60
J1 2.40 2.72
L13 14
L1 3.50 3.93
L20 16.40
L30 28.90
∅
P3.75 3.85
Q2.65 2.95
DocID024298 Rev 2 15/19
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package mechanical data
19
Figure 26. TO-220 type A drawing
?TYPE!?2EV?4
Package mechanical data STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
16/19 DocID024298 Rev 2
Table 12. TO-247 mechanical data
Dim. mm.
Min. Typ. Max.
A 4.85 5.15
A1 2.20 2.60
b1.0 1.40
b1 2.0 2.40
b2 3.0 3.40
c 0.40 0.80
D 19.85 20.15
E 15.45 15.75
e 5.30 5.45 5.60
L 14.20 14.80
L1 3.70 4.30
L2 18.50
∅P 3.55 3.65
∅R 4.50 5.50
S 5.30 5.50 5.70
DocID024298 Rev 2 17/19
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 Package mechanical data
19
Figure 27. TO-2 47 drawing
0075325_G
Revision history STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
18/19 DocID024298 Rev 2
5 Revision history
Table 13. Document revision history
Date Revision Changes
13-Sep-2013 1 First release.
19-Nov-2013 2
– Modified: R
DS(on)
and I
D
values in cover page
– Modified: values in Table 4
– Modified: R
DS(on)
typical and maximum values in Table 5, the
entire typical values in Table 6, 7 and 8
– Added: Section 2.1: Electrical characteristics (curves)
– Minor text changes
DocID024298 Rev 2 19/19
STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2
19
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