IRL2505S/L
Caculated continuous current based on maximum allowable
junction temperature;for recommended current-handling of the
package refer to Design Tip # 93-4
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJBreakdown Voltage Temp. Coefficient ––– 0.035 ––– V/°C Reference to 25°C, ID = 1mA
––– ––– 0.008 VGS = 10V, ID = 54A
––– ––– 0.010 ΩVGS = 5.0V, ID = 54A
––– ––– 0.013 VGS = 4.0V, ID = 45A
VGS(th) Gate Threshold Voltage 1.0 ––– 2.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 59 ––– ––– S VDS = 25V, ID = 54A
––– ––– 25 VDS = 55V, VGS = 0V
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 16V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -16V
QgTotal Gate Charge ––– ––– 130 ID = 54A
Qgs Gate-to-Source Charge ––– ––– 25 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 67 VGS = 5.0V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 ––– VDD = 28V
trRise Time ––– 160 ––– ID = 54A
td(off) Turn-Off Delay Time ––– 43 ––– RG = 1.3Ω, VGS = 5.0V
tfFall Time ––– 84 ––– RD = 0.50Ω, See Fig. 10
Between lead,
––– ––– and center of die contact
Ciss Input Capacitance ––– 5000 ––– VGS = 0V
Coss Output Capacitance ––– 1100 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 390 ––– ƒ = 1.0MHz, See Fig. 5
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
nH
RDS(on) Static Drain-to-Source On-Resistance
LSInternal Source Inductance 7.5
ns
IDSS Drain-to-Source Leakage Current µA
Parameter Min. Typ. Max. Units Conditions
ISContinuous Source Current MOSFET symbol
(Body Diode) ––– ––– showing the
ISM Pulsed Source Current integral reverse
(Body Diode)
––– ––– p-n junction diode.
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 54A, VGS = 0V
trr Reverse Recovery Time ––– 140 210 n s TJ = 25°C, IF = 54A
Qrr Reverse Recovery Charge ––– 650 970 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S+LD)
Source-Drain Ratings and Characteristics
S
D
G
A
104
360
Pulse width ≤ 300µs; duty cycle ≤ 2%.
Notes:
Uses IRL2505 data and test conditions
** When mounted on 1" square PCB ( FR-4 or G-10 Material ).
For recommended footprint and soldering techniques refer to application note #AN-994.
ISD ≤ 54A, di/dt ≤ 230A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
VDD = 25V, starting TJ = 25°C, L = 240µH
RG = 25Ω, IAS = 54A. (See Figure 12)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
IGSS