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To all our customers
Cautions
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2SB1409(L)/(S)
Silicon PNP Epitaxial
ADE-208-877 (Z)
1st. Edition
September 2000
Application
Low frequency power amplifier complementary Pair with 2SD2123(L)/(S)
Outline
4
123
4
3
2
11. Base
2. Collector
3. Emitter
4. Collector
DPAK
S Type
L Type
2SB1409(L)/(S)
2
Absolute Maximum Ratings (Ta = 25°C)
Item Symbol Ratings Unit
Collector to base voltage VCBO –180 V
Collector to emitter voltage VCEO –160 V
Emitter to base voltage VEBO –5 V
Collector current IC–1.5 A
Collector peak current IC(peak) –3 A
Collector power dissipation PC*118 W
Junction temperature Tj 150 °C
Storage temperature Tstg –55 to +150 °C
Note: 1. Value at TC = 25°C.
Electrical Characteristics (Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Collector to base breakdown
voltage V(BR)CBO –180 — — V IC = –1 mA, IE = 0
Collector to emitter breakdown
voltage V(BR)CEO –160 — — V IC = –10 mA, RBE = ∞
Emitter to base breakdown
voltage V(BR)EBO –5 — — V IE = –1 mA, IC = 0
Collector cutoff current ICBO — — –10 µAV
CB = –160 V, IE = 0
DC current transfer ratio hFE1*160 — 200 VCE = –5 V, IC = –150 mA*2
hFE2 30 — — VCE = –5 V, IC = –500 mA*2
Collector to emitter saturation
voltage VCE(sat) ——–1V I
C = –500 mA, IB = –50 mA
Base to emitter voltage VBE — — –1.5 V VCE = –5 V, IC = –150 mA
Gain bandwidth product fT— 240 — MHz VCE = –5 V, IC = –150 mA
Collector output capacitance Cob — 25 — pF VCB = –10 A, IE = 0, f = 1 MHz
Notes: 1. The 2SB1409(L)/(S) is grouped by hFE1 as follows.
BC
60 to 120 100 to 200
2. Pulse test.
2SB1409(L)/(S)
3
0Case Temperature TC (°C)
Collector power dissipation Pc (W)
Maximum Collector Dissipation Curve
50 100 150
10
30
20
–0.01
–0.03
–0.1
–0.3
–1.0
–10
–3
Collector to emitter Voltage VCE (V)
Collector Current IC (A)
–3 –10 –30 –100 –300
Area of Safe Operation
IC (max)
iC (peak)
PW = 10 ms
1 ms
DC Operation (T
C
= 25°C)
Ta = 25°C
1 Shot Pulse
Collector to emitter Voltage VCE (V)
Collector Current IC (A)
0
Typical Output Characteristics
–10 –20 –30 –40 –50
–0.2
–0.4
–0.6
–0.8
–1.0
IB = 0 TC = 25°C
PC = 18 W
–1 mA
–1.5
–2.5
–3.5
–4.5
–2
–3
–4
–5
10
30
100
300
1,000
Collector current IC (A)
DC current transfer ratio hFE
–0.01 –0.03 –0.1 –0.3 –1.0
DC Current Transfer Ratio vs.
Collector Current
VCE = –5 V
Ta = 25°C
2SB1409(L)/(S)
4
–0.01
–0.1
–1.0
–10
Collector current IC (A)
–0.001 –0.01 –0.1 –1.0
Collector to emitter saturation voltage
VCE (sat) (V)
Saturation Voltage vs. Collector Current
lC = 10 lB
Ta = 25°C–0.1
–0.3
–1.0
–3
–10
Collector current IC (A)
–0.03 –0.1 –0.3 –1.0 –3.0
Base to emitter saturation voltage
VBE (sat) (V)
Saturation Voltage vs. Collector Current
lC = 10 lB
Ta = 25°C
0
–0.4
–0.8
–1.2
–1.6
–2.0
Base to emitter voltage VBE (V)
Collector current IC (A)
0 –0.4 –0.8 –1.2 –1.6 –2.0
Typical Transfer Characteristics
VCE = –5 V
Ta = 25°C10
30
100
300
1,000
Collector current IC (A)
Gain bandwidth product fT (MHz)
–0.01 –0.03 –0.1 –0.3 –1.0
Gain Bandwidth Product vs.
Collector Current
VCE = –5 V
Ta = 25°C
2SB1409(L)/(S)
5
3
10
30
100
300
Collector to base voltage VCB (V)
Collector output capacitance Cob (pF)
–1 –3 –10 –30 –100
Collector Output Capacitance vs.
Collector to Base Voltage
f = 1 MHz
IE = 0
Ta = 25°C
2SB1409(L)/(S)
6
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other reasons during operation of the user’s unit according to this document.
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Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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