IXTA80N12T2 - Zilog - Datasheet.Global

Symbol Test Conditions Maximum Ratings

VDSS TJ= 25C to 175C 120 V

VDGR TJ= 25C to 175C, RGS = 1M120 V

VGSS Continuous 20 V

VGSM Transient 30 V

ID25 TC= 25C80 A

IDM TC= 25C, Pulse Width Limited by TJM 200 A

IATC= 25C40 A

EAS TC= 25C 400 mJ

PDTC= 25C 325 W

TJ-55 ... +175 C

TJM 175 C

Tstg -55 ... +175 C

TLMaximum Lead Temperature for Soldering 300 °C

TSOLD Plastic Body for 10s 260 °C

MdMounting Torque (TO-220) 1.13 / 10 Nm/lb.in.

Weight TO-263 2.5 g

TO-220 3.0 g

Symbol Test Conditions Characteristic Values

(TJ = 25C Unless Otherwise Specified) Min. Typ. Max.

BVDSS VGS = 0V, ID = 250A 120 V

VGS(th) VDS = VGS, ID = 100A 2.5 4.5 V

IGSS VGS =  20V, VDS = 0V 200 nA

IDSS VDS = VDSS, VGS= 0V 5 A

TJ = 150C 175A

RDS(on) VGS = 10V, ID = 0.5 • ID25, Notes 1, 2 17 m

TrenchT2TM

Power MOSFETs

N-Channel Enhancement Mode

Avalanche Rated

Fast Intrinsic Rectifier

IXTA80N12T2

IXTP80N12T2

VDSS = 120V

ID25 = 80A

RDS(on) 



 17m





DS100240A(8/13)

Features

International Standard Packages

175°C Operating Temperature

Avalanche Rated

Low RDS(on)

Fast Intrinsic Rectifier

High Current Handling Capability

Advantages

Easy to Mount

Space Savings

High Power Density

Applications

Synchronous Rectification

DC/DC Converters and Off-Line UPS

Primary- Side Switch

High Current Switching Applications

G = Gate D = Drain

S = Source Tab = Drain

TO-263AA (IXTA)

GDS

TO-220AB (IXTP)

D (Tab)

G

S

D (Tab)

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA80N12T2

IXTP80N12T2

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.

gfs VDS = 10V, ID = 0.5 • ID25, Note 1 36 60 S

Ciss 4740 pF

Coss VGS = 0V, VDS = 25V, f = 1MHz 415 pF

Crss 66 pF

td(on) 21 ns

tr 14 ns

td(off) 39 ns

tf 28 ns

Qg(on) 80 nC

Qgs VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25 23 nC

Qgd 20 nC

RthJC 0.46C/W

RthCH TO-220 0.50 C/W

Source-Drain Diode

Symbol Test Conditions Characteristic Values

(TJ = 25C, Unless Otherwise Specified) Min. Typ. Max.

IS VGS = 0V 80 A

ISM Repetitive, Pulse Width Limited by TJM 320 A

VSD IF = IS, VGS = 0V, Note 1 1.3 V

trr 90 ns

IRM 4 A

QRM 180 nC

Notes: 1. Pulse test, t  300s, duty cycle, d  2%.

2. On through-hole packages, RDS(on) Kelvin test contact

location must be 5mm or less from the package body.

Resistive Switching Times

VGS = 10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25

RG = 10 (External)

IF = 0.5 • ID25, VGS = 0V

-di/dt = 100A/s

VR = 60V

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Pins: 1 - Gate 2 - Drain

3 - Source

TO-220 Outline

TO-263 Outline

Pins:

1 - Gate

2,4 - Drain

3 - Source

IXTA80N12T2

IXTP80N12T2

Fig. 1. Output Characteristics @ T

J

= 25º C

0

10

20

30

40

50

60

70

80

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6

VDS - Volts

ID - Amperes

V

GS

= 10V

9V

8V 7V

5V

6V

Fig. 3. Output Characteristics @ T

J

= 150ºC

0

10

20

30

40

50

60

70

80

00.5 11.522.5 33.5

VDS - Volts

ID - Amperes

V

GS

= 15V

10V

8V

7V

5V

6V

4V

Fig. 4. R

DS(on)

No rmalized to I

D

= 40A Value vs.

Junction Temperature

0.2

0.6

1.0

1.4

1.8

2.2

2.6

3.0

3.4

-50 -25 0 25 50 75 100 125 150 175

TJ - Degrees Centigrade

RDS(on) - Normalized

V

GS

= 10V

I

D

= 40A

I

D

= 80A

Fig. 2. Ex tended Output Characteristics @ T

J

= 25º C

0

50

100

150

200

250

0 2 4 6 8 10 12 14 16 18 20

VDS - Volts

ID - Amperes

V

GS

= 15V

10V

5V

6V

7V

8V

Fig. 5. R

DS(on)

Normalized to I

D

= 40A Value vs.

Drain Current

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0 50 100 150 200 250

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 175ºC

T

J

= 25ºC

Fig. 6. Drain Current v s. Case Temperature

0

10

20

30

40

50

60

70

80

90

-50 -25 0 25 50 75 100 125 150 175

T

C

- Degrees Centigrade

I

D

- Amperes

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA80N12T2

IXTP80N12T2

Fig. 7. Input Admittance

0

20

40

60

80

100

120

140

34567

V

GS

- Volts

I

D

- Amperes

T

J

= 150ºC

25ºC

- 40ºC

Fig. 8. Transconductance

0

20

40

60

80

100

120

0 20 40 60 80 100 120 140 160

I

D

- Amperes

g

f s

- Siemens

T

J

= - 40ºC

25ºC

150ºC

Fig. 9. Forward Voltage Drop of Intrinsic Diode

0

50

100

150

200

250

0.30.40.50.60.70.80.91.01.11.21.31.41.5

V

SD

- Volts

I

S

- Amperes

T

J

= 150ºC

T

J

= 25ºC

Fig. 10. Gate Charge

0

1

2

3

4

5

6

7

8

9

10

0 1020304050607080

Q

G

- NanoCoulombs

V

GS

- Volts

V

DS

= 60V

I

D

= 40A

I

G

= 10mA

Fig. 11. Capacitance

10

100

1000

10000

0 5 10 15 20 25 30 35 40

V

DS

- Volts

Capacitance - PicoFarad

s

f

= 1 MHz

Ciss

Crss

Coss

Fig. 12. Forward-Bias Safe Operating Area

0.1

1

10

100

1000

1 10 100 1,000

V

DS

- Volts

I

D

- Amperes

100µs

1ms

RDS(on) Limit

TJ = 175ºC

TC = 25ºC

Single Pulse

10ms

DC

25µs

IXTA80N12T2

IXTP80N12T2

Fig. 14. Resis tive Turn-on Rise Time vs.

Drain Current

10

12

14

16

18

20

40 45 50 55 60 65 70 75 80

I

D

- Amperes

t

r - Nanoseconds

T

J

= 25ºC

T

J

= 125ºC

R

G

= 10 , V

GS

= 10V

V

DS

= 60V

Fig. 15. Resis tive Turn-on Switching Times vs.

Gate Resistance

0

20

40

60

80

100

120

140

160

180

10 15 20 25 30 35 40 45 50

R

G

- Ohms

t

r

- Nanoseconds

0

15

30

45

60

75

90

105

120

135

t

d(on)

- Nanoseconds

t

r

t

d(on)

- - - -

T

J

= 125ºC, V

GS

= 10V

V

DS

= 60V

I

D

= 40A

I

D

= 80A

Fig. 16. Resistiv e Turn-off Switching Tim e s vs.

Junction Tempe rature

0

10

20

30

40

50

60

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

f

- Nanoseconds

20

30

40

50

60

70

80

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

R

G

= 10, V

GS

= 10V

V

DS

= 60V

I

D

= 40A

I

D

= 80A

Fig. 13. Resistive Turn-on Rise Time vs.

Junction Tempe rature

10

12

14

16

18

20

25 35 45 55 65 75 85 95 105 115 125

T

J

- Degrees Centigrade

t

r - Nanoseconds

R

G

= 10 , V

GS

= 10V

V

DS

= 60V

I

D

= 80A

I

D

= 40A

Fig. 17. Resistive Turn-off Switching Times vs.

Drain Cu rrent

10

15

20

25

30

35

40

40 45 50 55 60 65 70 75 80

ID - Amperes

t

f

- Nanoseconds

20

30

40

50

60

70

80

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

RG = 10, V

GS

= 10V

V

DS

= 60V

TJ = 25ºC, 125ºC

Fig. 18. Resistive Turn-off Switching Times vs .

Gate Resistance

0

20

40

60

80

100

120

140

10 15 20 25 30 35 40 45 50

RG - Ohms

t

f

- Nanoseconds

0

50

100

150

200

250

300

350

t

d(off)

- Nanoseconds

t

f

t

d(off)

- - - -

TJ = 125ºC, VGS = 10V

VDS = 60V

I D = 80A, 40A

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXTA80N12T2

IXTP80N12T2

IXYS REF: IXT_80N12T2 (V4)3-11-10

Fig. 19. Maximum Transient Thermal Impedance

0.01

0.1

1

0.00001 0.0001 0.001 0.01 0.1 1 10

Pulse Width - Seconds

Z

(th)JC

- ºC / W