BCR 35PN
Oct-19-19991
NPN/PNP Silicon Digital Transistor Array
• Switching circuit, inverter, interface circuit,
driver circuit
• Two (galvanic) internal isolated NPN/PNP
Transistors in one package
• Built in bias resistor (R1=10kΩ, R2=47kΩ)
Tape loading orientation
VPS05604
6
3
1
5
4
2
EHA07193
123
456
W1s
Direction of Unreeling
Top View Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA07176
654
321
C1 B2 E2
C2B1E1
1
R
R2
R1
R2
TR1
TR2
Type Marking Pin Configuration Package
BCR 35PN WUs 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363
Maximum Ratings
Parameter Symbol Value Unit
Collector-emitter voltage VCEO 50 V
Collector-base voltage VCBO 50
Emitter-base voltage VEBO 6
Input on Voltage Vi(on) 20
DC collector current IC100 mA
Total power dissipation, TS = 115 °C Ptot 250 mW
Junction temperature Tj150 °C
Storage temperature Tst
g
-65 ... 150
Thermal Resistance
Junction ambient 1) RthJA K/W
≤ 275
Junction - soldering point RthJS ≤ 140
1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu
BCR 35PN
Oct-19-19992
Electrical Characteristics at TA=25°C, unless otherwise specified
Symbol Values UnitParameter
max.typ.min.
DC Characteristics
-
V(BR)CEO 50Collector-emitter breakdown voltage
IC = 100 µA, IB = 0
V-
-
V(BR)CBO -50Collector-base breakdown voltage
IC = 10 µA, IB = 0
nACollector cutoff current
VCB = 40 V, IE = 0
ICBO 100- -
Emitter cutoff current
VEB = 6 V, IC = 0
- µA
IEBO - 167
--70
hFE
DC current gain 1)
IC = 5 mA, VCE = 5 V
-
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
VCEsat V0.3- -
Input off voltage
IC = 100 µA, VCE = 5 V
- 1 V0.5
Vi(off)
Input on Voltage
IC = 2 mA, VCE = 0.3 V
0.5 - 1.4 V
Vi(on)
kΩ
13107
R1
Input resistor
Resistor ratio R1/R2-0.21 0.240.19
AC Characteristics
Transition frequency
IC = 10 mA, VCE = 5 V, f = 100 MHz
fT- 150 - MHz
Collector-base capacitance
VCB = 10 V, f = 1 MHz
Ccb - 2 - pF
1) Pulse test: t < 300µs; D < 2%
BCR 35PN
Oct-19-19993
NPN Type
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 -1 10 0 10 1 10 2
mA
IC
0
10
1
10
2
10
3
10
-
h
FE
Collector-Emitter Saturation Voltage
VCEsat = f (IC), hFE = 20
0.0 0.2 0.4 0.6 V1.0
VCEsat
0
10
1
10
2
10
mA
I
C
Input on Voltage Vi(on) = f (IC)
VCE = 0.3V (common emitter configuration)
10 -1 10 0 10 1 10 2
V
Vi(on)
-1
10
0
10
1
10
2
10
mA
I
C
Input off voltage Vi(off) = f (IC)
VCE = 5V (common emitter configuration)
0.0 0.5 1.0 V2.0
Vi(off)
-3
10
-2
10
-1
10
0
10
1
10
mA
I
C
BCR 35PN
Oct-19-19994
PNP Type
Collector-Emitter Saturation Voltage
VCEsat = f (IC), hFE = 20
0.0 0.2 0.4 0.6 V1.0
VCEsat
0
10
1
10
2
10
mA
I
C
DC Current Gain hFE = f (IC)
VCE = 5V (common emitter configuration)
10 -1 10 0 10 1 10 2
mA
IC
0
10
1
10
2
10
3
10
-
h
FE
Input off voltage Vi(off) = f (IC)
VCE = 5V (common emitter configuration)
0.0 0.5 1.0 V2.0
Vi(off)
-3
10
-2
10
-1
10
0
10
1
10
mA
I
C
Input on Voltage Vi(on) = f (IC)
VCE = 0.3V (common emitter configuration)
10 -1 10 0 10 1 10 2
V
Vi(on)
-1
10
0
10
1
10
2
10
mA
I
C
BCR 35PN
Oct-19-19995
Total power dissipation Ptot = f (TA*;TS)
* Package mounted on epoxy
0 20 40 60 80 100 120 °C 150
TA,TS
0
50
100
150
200
mW
300
P
tot
TS
TA
Permissible Pulse Load RthJS = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
-1
10
0
10
1
10
2
10
3
10
K/W
R
thJS
0.5
0.2
0.1
0.05
0.02
0.01
0.005
D = 0
Permissible Pulse Load
Ptotmax / PtotDC = f (tp)
10 -6 10 -5 10 -4 10 -3 10 -2 10 0
s
tp
0
10
1
10
2
10
3
10
-
Ptotmax
/ P
totDC
D = 0
0.005
0.01
0.02
0.05
0.1
0.2
0.5
