BCR 35PN NPN/PNP Silicon Digital Transistor Array 4 * Switching circuit, inverter, interface circuit, 5 6 driver circuit * Two (galvanic) internal isolated NPN/PNP Transistors in one package * Built in bias resistor (R1=10k, R2=47k) 2 1 VPS05604 Tape loading orientation Top View 654 Marking on SOT-363 package (for example W1s) corresponds to pin 1 of device C1 B2 E2 6 5 4 R2 R1 W1s 123 TR2 TR1 Position in tape: pin 1 opposite of feed hole side Direction of Unreeling 3 EHA07193 R1 R2 1 2 3 E1 B1 C2 EHA07176 Type Marking BCR 35PN WUs Pin Configuration Package 1=E1 2=B1 3=C2 4=E2 5=B2 6=C1 SOT-363 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO 50 Collector-base voltage VCBO 50 Emitter-base voltage VEBO 6 Input on Voltage Vi(on) 20 DC collector current IC 100 mA Total power dissipation, TS = 115 C Ptot 250 mW Junction temperature Tj 150 C Storage temperature Tstg Value Unit V -65 ... 150 Thermal Resistance Junction ambient 1) RthJA 275 Junction - soldering point RthJS 140 K/W 1) Package mounted on pcb 40mm x 40mm x 1.5mm / 0.5cm 2 Cu 1 Oct-19-1999 BCR 35PN Electrical Characteristics at TA=25C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. V(BR)CEO 50 - - V(BR)CBO 50 - - ICBO - - 100 nA IEBO - - 167 A hFE 70 - - - - - 0.3 V Vi(off) 0.5 - 1 V Vi(on) 0.5 - 1.4 V 7 10 13 k 0.19 0.21 0.24 fT - 150 - MHz Ccb - 2 - pF DC Characteristics Collector-emitter breakdown voltage V IC = 100 A, IB = 0 Collector-base breakdown voltage IC = 10 A, IB = 0 Collector cutoff current VCB = 40 V, IE = 0 Emitter cutoff current VEB = 6 V, IC = 0 DC current gain 1) IC = 5 mA, VCE = 5 V Collector-emitter saturation voltage1) VCEsat IC = 10 mA, IB = 0.5 mA Input off voltage IC = 100 A, VCE = 5 V Input on Voltage IC = 2 mA, VCE = 0.3 V Input resistor R1 Resistor ratio R1 /R2 - AC Characteristics Transition frequency I C = 10 mA, VCE = 5 V, f = 100 MHz Collector-base capacitance VCB = 10 V, f = 1 MHz 1) Pulse test: t < 300s; D < 2% 2 Oct-19-1999 BCR 35PN NPN Type DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC), hFE = 20 10 2 10 3 - 10 2 IC hFE mA 10 1 10 1 10 0 -1 10 10 0 10 1 mA 10 10 0 0.0 2 0.2 0.4 V 0.6 IC 1.0 VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage Vi(off) = f (IC) VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration) 10 1 10 2 mA mA 10 0 IC IC 10 1 10 -1 10 0 10 -2 10 -1 -1 10 10 0 10 1 V 10 10 -3 0.0 2 Vi(on) 0.5 1.0 V 2.0 Vi(off) 3 Oct-19-1999 BCR 35PN PNP Type DC Current Gain hFE = f (IC ) Collector-Emitter Saturation Voltage VCE = 5V (common emitter configuration) VCEsat = f (IC), hFE = 20 10 2 10 3 - 10 2 IC hFE mA 10 1 10 1 10 0 -1 10 10 0 10 1 mA 10 10 0 0.0 2 0.2 0.4 V 0.6 IC 1.0 VCEsat Input on Voltage Vi(on) = f (IC ) Input off voltage V i(off) = f (IC) VCE = 0.3V (common emitter configuration) VCE = 5V (common emitter configuration) 10 1 10 2 mA mA 10 0 IC IC 10 1 10 -1 10 0 10 -2 10 -1 -1 10 10 0 10 1 V 10 10 -3 0.0 2 Vi(on) 0.5 1.0 V 2.0 Vi(off) 4 Oct-19-1999 BCR 35PN Total power dissipation Ptot = f (TA *;TS ) * Package mounted on epoxy 300 mW P tot TS 200 TA 150 100 50 0 0 20 40 60 80 120 C 100 150 TA,TS Permissible Pulse Load Permissible Pulse Load RthJS = f (tp ) Ptotmax / PtotDC = f (tp) 10 3 10 3 Ptotmax / PtotDC K/W RthJS 10 2 - D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 2 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 0 10 -1 -6 10 10 -5 10 -4 10 -3 10 10 1 -2 s 10 10 0 -6 10 0 tp 10 -5 10 -4 10 -3 10 -2 s 10 0 tp 5 Oct-19-1999