IX S$ CORP L&E D M@@ 4b4beeb 0000613 1 mm IXTH12N45, IXTH12N50, IXTM12N45, IXTM12N50 12 AMPS, 450-500 V, 0.42/0.52 MAXIMUM RATINGS T3945 IXTH12N45 IXTH12N50 Parameter Sym. IXTM12N45 IXTM12N50 Unit Drain-Source Voltage (1) Voss 450 500 Vac Drain-Gate Voltage (Reg =1.0 M22) (1) Voor 450 at 500 Vag Gate-Source Voltage Continuous Vas +20 Vac Gate-Source Voltage Transient Vesm +30 Vv Drain Current Continuous (T, =25C) lb 12 Age Drain Current Pulsed (3) lom 48 A Total Power Dissipation Pp IXTH/IXTM 180/150 Ww Power Dissipation Derating >25C IXTHAXTM 1.4/1.2 Wes Operating and Storage Temperature Ty & Tag ~65 to +150 C Max. Lead Temp. for Soldering Tr 300 (1.6mm from case for 10 sec.) C ELECTRICAL CHARACTERISTICS T, =25C unless otherwise specified Parameter Type Min. | Typ. | Max. | Units Test Conditions BVpss Drain-Source Breakdown Voltage 12N45, 45A 450 - - Vv Vag = OV 12N50, 50A 500 - ~ V 1p =250pA Vasa, _ Gate Threshold Voitage ALL 2.0 - 40 Vv Vos =Vas. Ip =250nA less Gate-Source Leakage Forward ALL - - 100 nA | Vos =20V lass Gate-Source Leakage Reverse ALL - - 100 nA | Veg=-20V loss Zero Gate Voltage Drain Current - - 200 PA_| Vos =Max. Ratingx0.8, Vg. =0V ALL = [| _- | 1000 [pA _| Vp. =Max. Ratingx08, Vz. =0V, T, =125C Rosen) Static Drain-Source On-State 12N45, 50A - - 0.4 Q . Ves =10V, Ip =6.0A Resistance (2) ; 12N45, 50 - - 05 Q Gi Forward Transconductance (2) ALL 75 9.0 ~ Ss Vos 15V, |p =6.0A Cics Input Capacitance ALL - 2700 - pF | Veg =O0V, Vp, =25V, f=1.0 MHz Coss Output Capacitance ALL - 290 - pF Crs Reverse Transfer Capacitance ALL - 80 - pF tetony Turn-On Delay Time ALL - 20 35 NS | Vpg=0.5 BVogg, Ip =6.0A, Z, =5Q iF Rise Time ALL - 25 50 ns oo ; tain Tuen-Ot Delay Tne ALL [=| 70 | 700 [ne | (MOSEET switching tos are essontally t Fall Time ALL - 30 60 ns See Fig. 3, page 22 for test circuit.) Q, Total Gate Charge ALL - - 120 nc iase p= 12.04, Mos 08 Max. Rating. |_Qas Gate-Source Charge ALL = = 40 nc ae ane temperature. See Fig: 4, page 22 mor Gate-Drain (Miller) Charge ALL - ~ 60 nC | for test circuit.) Wosa Unclamped Drain-to-Source 12N45R, 45AR . oo. Avalanche Energy 12NSOR, 50AR 800 - - mJ See Fig. 5, page 22 for test circuit. THERMAL RESISTANCE Pus Junction-to-Case IXTM ~ = 0.83 _| C/W IXTH - - 0.7 =| CIW Pawa Junction-to-Ambient TO-204 IXTM ~ ~ 30.0 | C/W | Free Air Operation Pinas Junction-to-Ambient TO-247 IXTH - - 60.0 | C/W | Free Air Operation SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS ls (Body Diode ne current ALL - | - | 120 | A | Modified MOSFET symbol! Igay Pulse Source Current showing the integral ifi (Body Diode) (1) ALL - - 480 A reverse P-N junction rectifier. Vsp Diode Forward Voltage (2) ALL - - 15 Vv T, =25C, |, =12.0A, Veg =O0V ty Reverse Recovery Time ALL - 400 - ns 1,=12.0A, di/dt=100A/us (1) T,=25C to 150C (3) Repetitive rating: Pulse width limited by max. junction temperature. (2) Pulse test: Pulse width <300us, duty cycle <2% IXYS Corporation 2355 Zanker Road,-San Jose, California 95131-1109 (408) 435-1900 13